The invention discloses a method for cutting a silicon wafer through a low-particle electroplating gold wire. The method includes the first step of bar adhesion, the second step of wire cutting, the third step of glue disengaging, the fourth step of wafer inserting, the fifth step of cleaning and the sixth step of verifying. According to the method, the silicon wafer is cut through the low-particle electroplating gold wire with a particle height of 6 microns to 12 microns; meanwhile, an existing production process is improved, the linear speed in the wire cutting step is increased, the steel wire feed and return distance is increased, the cooling temperature of cooling liquid is lowered; by means of the method, the abnormity, caused by the particle vibration amplitude generated by electroplating gold wire swinging, of the surface of the silicon wafer can be reduced, the cutting capacity of the low-particle electroplating gold wire can be reduced, it is ensured that the yield of the silicon wafer cut by the low-particle electroplating gold wire and the yield of the silicon wafer cut by an intermediate-particle electroplating gold wire are located at the same level, and the aims of increasing the silicon wafer yield, ensuring the high production efficiency and increasing the economic benefits are achieved.