Method for cutting silicon wafer through low-particle electroplating gold wire

A diamond wire cutting and silicon wafer technology, which is used in fine working devices, stone processing equipment, manufacturing tools, etc., can solve the problems of uneven thickness of silicon wafers and high damage rate of silicon wafer surface, and achieve a good cutting environment and particle count. Increase, the effect of increased wear strength

Active Publication Date: 2015-03-25
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for cutting silicon wafers using a low-particle electroplating diamond wire, so as to solve the problems that the existing process of cutting silicon wafers will lead to uneven thickness of silicon wafers, high surface damage rate of silicon wafers, etc., which affect the quality of silicon wafers. question

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1: a kind of method of applying low-particle electroplating diamond wire to cut silicon chips, it comprises the following steps: (1) sticking stick; (2) wire cutting; (3) degumming; (4) inserting sheet; (5) cleaning : (6) Inspection;

[0017] (1) Gluing rods: Glue the qualified silicon rods according to the process requirements.

[0018] (2) Wire cutting: the silicon rods that have been glued are loaded onto the electroplated diamond wire cutting machine, and cut with electroplated diamond wires, and the silicon rods are processed into silicon wafers; wherein the particle height of the electroplated diamond wires is The main problem of 6um, low-particle electroplated diamond wire compared with medium-high particle electroplated diamond wire is insufficient cutting ability. Therefore, the cutting ability of the low-particle electroplated diamond wire is improved through three aspects of parameter control. The first On the one hand, increase the line speed. At...

Embodiment 2

[0025] A method for cutting silicon chips using low-particle electroplating diamond wires, comprising the following steps: (1) sticking sticks; (2) wire cutting; (3) degumming; (4) inserting sheets; (5) cleaning: (6) test;

[0026] (1) Gluing rods: Glue the qualified silicon rods according to the process requirements.

[0027] (2) Wire cutting: the silicon rods that have been glued are loaded onto the electroplated diamond wire cutting machine, and are cut with electroplated diamond wires, and the silicon rods are processed into silicon wafers; wherein the particle height of the electroplated diamond wires is The main problem of 12um, low-particle electroplated diamond wire compared with medium-high particle electroplated diamond wire is insufficient cutting ability. Therefore, the cutting ability of the low-particle electroplated diamond wire is improved through three aspects of parameter control. The first On the one hand, increase the line speed. At present, the line speed...

Embodiment 3

[0034] A method for cutting silicon wafers using low-particle electroplating diamond wires, comprising the following steps: (1) sticking sticks; (2) wire cutting; (3) degumming; (4) inserting sheets; (5) cleaning: (6) test;

[0035] (1) Gluing rods: Glue the qualified silicon rods according to the process requirements.

[0036] (2) Wire cutting: the silicon rods that have been glued are loaded onto the electroplated diamond wire cutting machine, and cut with electroplated diamond wires, and the silicon rods are processed into silicon wafers; wherein the particle height of the electroplated diamond wires is The main problem of 9um, low-particle electroplated diamond wire compared with medium-high particle electroplated diamond wire is insufficient cutting ability. Therefore, the cutting ability of the low-particle electroplated diamond wire is improved through three aspects of parameter control. The first On the one hand, increase the line speed. At present, the line speed of ...

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PUM

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Abstract

The invention discloses a method for cutting a silicon wafer through a low-particle electroplating gold wire. The method includes the first step of bar adhesion, the second step of wire cutting, the third step of glue disengaging, the fourth step of wafer inserting, the fifth step of cleaning and the sixth step of verifying. According to the method, the silicon wafer is cut through the low-particle electroplating gold wire with a particle height of 6 microns to 12 microns; meanwhile, an existing production process is improved, the linear speed in the wire cutting step is increased, the steel wire feed and return distance is increased, the cooling temperature of cooling liquid is lowered; by means of the method, the abnormity, caused by the particle vibration amplitude generated by electroplating gold wire swinging, of the surface of the silicon wafer can be reduced, the cutting capacity of the low-particle electroplating gold wire can be reduced, it is ensured that the yield of the silicon wafer cut by the low-particle electroplating gold wire and the yield of the silicon wafer cut by an intermediate-particle electroplating gold wire are located at the same level, and the aims of increasing the silicon wafer yield, ensuring the high production efficiency and increasing the economic benefits are achieved.

Description

Technical field: [0001] The invention relates to a method for cutting a silicon chip, in particular to a method for cutting a silicon chip with a low particle electroplating diamond wire. Background technique: [0002] In the solar energy industry, cutting silicon wafers with electroplated diamond wire is no longer a new topic. During the high-speed operation of electroplated diamond wire, the particles on the steel wire play a role in processing silicon rods into silicon wafers. At present, absolutely Most electroplated diamond wire cut silicon wafers are cut with 15um-20um medium-high grain electroplated diamond wire. Using this type of diamond wire cut, the steel wire has a strong cutting ability and reduces the probability of abnormal occurrence of impermeable cuts. However, the height of the particles is related to the The surface quality of the silicon wafer has a great relationship. The particle height of the medium-high particle diamond wire is relatively high. Durin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04
CPCB28D5/045
Inventor 郭刚刚危晨赵越崔伟王景然杜雪冬王龙李帅徐小龙王岩徐强
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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