Method for cutting silicon wafer through low-particle electroplating gold wire

Abstract

The invention discloses a method for cutting a silicon wafer through a low-particle electroplating gold wire. The method includes the first step of bar adhesion, the second step of wire cutting, the third step of glue disengaging, the fourth step of wafer inserting, the fifth step of cleaning and the sixth step of verifying. According to the method, the silicon wafer is cut through the low-particle electroplating gold wire with a particle height of 6 microns to 12 microns; meanwhile, an existing production process is improved, the linear speed in the wire cutting step is increased, the steel wire feed and return distance is increased, the cooling temperature of cooling liquid is lowered; by means of the method, the abnormity, caused by the particle vibration amplitude generated by electroplating gold wire swinging, of the surface of the silicon wafer can be reduced, the cutting capacity of the low-particle electroplating gold wire can be reduced, it is ensured that the yield of the silicon wafer cut by the low-particle electroplating gold wire and the yield of the silicon wafer cut by an intermediate-particle electroplating gold wire are located at the same level, and the aims of increasing the silicon wafer yield, ensuring the high production efficiency and increasing the economic benefits are achieved.

Description

Technical field: [0001] The invention relates to a method for cutting a silicon chip, in particular to a method for cutting a silicon chip with a low particle electroplating diamond wire. Background technique: [0002] In the solar energy industry, cutting silicon wafers with electroplated diamond wire is no longer a new topic. During the high-speed operation of electroplated diamond wire, the particles on the steel wire play a role in processing silicon rods into silicon wafers. At present, absolutely Most electroplated diamond wire cut silicon wafers are cut with 15um-20um medium-high grain electroplated diamond wire. Using this type of diamond wire cut, the steel wire has a strong cutting ability and reduces the probability of abnormal occurrence of impermeable cuts. However, the height of the particles is related to the The surface quality of the silicon wafer has a great relationship. The particle height of the medium-high particle diamond wire is relatively high. Durin...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for cutting silicon wafers using a low-particle electroplating diamond wire, so as to solve the problems that the existing process of cutting silicon wafers will lead to uneven thickness of silicon wafers, high surface damage rate of silicon wafers, etc., which affect the quality of silicon wafers. question