The invention discloses a rotating shoulder-expanding stable pulling-up method for large-
kilogram sapphire crystals. The method comprises the steps as follows: heating for material melting to enable the raw materials to be just melted and enable the temperature of the melted material to be close to a
melting point; lowering a crystalline style, and preheating a
seed crystal mounted below the crystalline style; measuring temperature to adjust and control the temperature of the melted material to a
crystal growth temperature; seeding, to be specific, placing the clean
seed crystal above liquid level in a standing manner to enable the surface of the
seed crystal to melt, rotating the crystalline style, and actuating the seeding process after an artificial cold-core is formed; actuating an automatic shoulder-expanding procedure, lifting the crystalline style at uniform speed, adjusting the power of a heater to lower the temperature gradually, at the same time, keeping the rotation of the crystalline style, stopping rotation when the weight of the
crystal reaches 5 kg, enabling the rotating speed of the crystalline style to gradually decrease by stages when the weight of the
crystal is 0-5 kg; actuating an automatic growing procedure when the weight of the crystal reaches 10 kg, lifting the crystalline style at uniform speed, adjusting the power of the heater to lower the temperature gradually; finally, separating, cooling, and taking out the crystal, so that the whole crystal growing process is completed. Through the method provided by the invention, the seeding and shoulder-expanding method in the prior art are improved, and the finished product rate as well as the yield are improved.