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Preparation method of square silicon core

A silicon core, square technology, applied in the direction of chemical instruments and methods, final product manufacturing, self-melt pulling method, etc., can solve the problems of low production efficiency and the uniformity of the resistivity distribution of the silicon core to be further improved, to achieve The effect of reducing the content of impurities, shortening the crystal pulling time, and reducing the crack rate

Active Publication Date: 2021-09-07
内蒙古和光新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (2) Zone melting method: the silicon core resistivity produced by this method is relatively uniform, but the production efficiency is low;
However, the distribution uniformity of the resistivity of the silicon core needs to be further improved.

Method used

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  • Preparation method of square silicon core

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The preparation method of the silicon core of the present embodiment is as follows:

[0036] (1) Take 100 parts of 1mm-3mm polysilicon scrap and 0.01 part of boron-doped master alloy and put them into the quartz crucible at the bottom of the single crystal furnace, vacuumize, and then pass in protective gas, wherein the protective gas is argon, and the gas flow rate is 50slpm ;

[0037] (2) Heating: Power on the single crystal furnace at 30KW for half an hour, then raise it to 60KW at a speed of 1KW / min, and then increase it to 100KW at a speed of 1.5KW / min, keep it for 2 hours to obtain a completely melted silicon liquid, and then increase it at a speed of 2KW / min Reduce to 50KW, and at the same time lower the seed crystal suspended by a flexible shaft on the top of the closed single crystal furnace, 100mm away from the silicon liquid level, and keep it for 0.2 hours.

[0038] (3) Seeding: Lower the seed crystal to 5 mm below the silicon liquid level to melt the 5 mm ...

Embodiment 2

[0049] The preparation method of the silicon core of the present embodiment is as follows:

[0050] (1) Take 100 parts of 0.5mm-1mm polysilicon scrap and 0.01 part and put it in the quartz crucible at the bottom of the single crystal furnace, vacuumize it, and then feed a protective gas, wherein the protective gas is argon gas, and the gas flow rate is 75slpm;

[0051] (2) Heating: Power on the single crystal furnace at 30KW for half an hour, then raise it to 60KW at a speed of 1.5KW / min, and then increase it to 105KW at a speed of 2.0KW / min, and keep it for 2 hours; to obtain a completely melted silicon liquid, and then increase it to 5KW / min The speed is reduced to 50KW, and the seed crystal suspended by a flexible shaft on the top of the closed single crystal furnace is lowered, 120mm away from the silicon liquid surface, and kept for 0.5 hours.

[0052] (3) Seeding: Lower the seed crystal to 10 mm below the silicon liquid level to melt the 10 mm seed crystal. Then pull ou...

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Abstract

The invention relates to the technical field of silicon core processes, in particular to a preparation method of a square silicon core. The preparation method comprises the following steps: (1) feeding; (2) melting the polycrystalline silicon raw material; (3) seeding; (4) shouldering; (5) shoulder turning; (6) performing equal-diameter growth; (7) ending; and (8) blowing out, blowing in, cutting and pickling to obtain a square silicon core; wherein in the shouldering step, the diameter of a fine grain is shouldered to be more than 200mm by adjusting the electrifying power of a single crystal furnace and the shaft lifting speed of a flexible shaft; and the crystal bar with more uniform crystal pulling resistivity distribution by adjusting the electric power, the rising speed of the flexible shaft and the crucible is grown in an equal-diameter manner. According to the invention, by controlling key process parameters, the crystal pulling time is shortened, the contact time of the crucible and the molten silicon liquid is reduced, the content of impurities in the silicon crystal liquid is effectively reduced, and the resistivity of a silicon core is favorably controlled.

Description

technical field [0001] The invention relates to the technical field of silicon cores, in particular to a method for preparing square silicon cores. Background technique [0002] Polysilicon has become the leading photovoltaic material in the solar industry because of its wide source of raw materials, high production efficiency and large production scale. Most of the polysilicon currently on the market adopts the improved Siemens method to produce polysilicon. [0003] In the process of producing polysilicon by the improved Siemens method, the silicon core is used as the heat carrier for the reduction reaction to deposit polysilicon in the reduction furnace. After the reduction reaction is completed, silicon is deposited around the silicon core, and the silicon core and silicon are crushed together as polysilicon raw materials. Therefore, the silicon core is used and consumed as a very important auxiliary material in the polysilicon production process. [0004] The silicon ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/20C30B29/06
CPCC30B15/00C30B15/20C30B29/06Y02P70/50
Inventor 李帅吴海啸刘小明武建华邢瑞栋边雨
Owner 内蒙古和光新能源有限公司
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