Preparation method for back electrode of solar battery
A solar cell and back electrode technology, which is applied in the field of solar cells, can solve the problems of high silicon chip breakage or hidden crack rate, high cost, etc., and achieve the effects of low chip and hidden crack rate, low production cost, and consistent photoelectric efficiency
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Embodiment 1
[0055] This embodiment provides a method for preparing a back electrode of a solar cell, comprising the following steps:
[0056] Step 1: Preparation of Silicon Wafer
[0057] Select a polysilicon wafer with a specification of 156×156mm and a thickness of 180μm (before corrosion). After the polysilicon wafer is textured, PN junction-made, and anti-reflection film coated, the back-field aluminum paste (Shuohe) is screen-printed on the entire backlight surface. 108C aluminum paste produced by Electronic Materials Co., Ltd.) and dried, then print the front silver paste (17F silver paste produced by Dupont Company), and after sintering in a tunnel furnace, a silicon wafer with an aluminum back field and a positive electrode line is obtained;
[0058] Step 2: Preparation of Brazing Flux
[0059] Heat 70 parts by mass of triethanolamine to 55°C, then add 10 parts by mass of ethyl cellulose (viscosity specification: 20m Pas, produced by Dow, USA), and then add 20 parts by mass of zi...
Embodiment 2
[0066] This embodiment provides a method for preparing a back electrode of a solar cell, comprising the following steps:
[0067] Step 1: Preparation of Silicon Wafer
[0068] Select a polysilicon wafer with a specification of 156×156mm and a thickness of 180μm (before corrosion). After the polysilicon wafer is textured, PN junction-made, and anti-reflection film coated, the back-field aluminum paste (Shuohe) is screen-printed on the entire backlight surface. 108C aluminum paste produced by Electronic Materials Co., Ltd.) and dried, then print the front silver paste (17F silver paste produced by Dupont Company), and after sintering in a tunnel furnace, a silicon wafer with an aluminum back field and a positive electrode line is obtained;
[0069] Step 2: Preparation of Brazing Flux
[0070] Heat 95 parts by mass of triethanolamine to 60°C, then add 15 parts by mass of nitrocellulose (the brand is L-type, produced by Luzhou North Chemical Industry Company), and then add 30 par...
Embodiment 3
[0077] This embodiment provides a method for preparing a back electrode of a solar cell, comprising the following steps:
[0078] Step 1: Preparation of Silicon Wafer
[0079] Select a polysilicon wafer with a specification of 156×156mm and a thickness of 180μm (before corrosion). After the polysilicon wafer is textured, PN junction-made, and anti-reflection film coated, the back-field aluminum paste (Shuohe) is screen-printed on the entire backlight surface. 108C aluminum paste produced by Electronic Materials Co., Ltd.) and dried, then print the front silver paste (17F silver paste produced by Dupont Company), and after sintering in a tunnel furnace, a silicon wafer with an aluminum back field and a positive electrode line is obtained;
[0080] Step 2: Preparation of Brazing Flux
[0081]Heat 80 parts by mass of triethanolamine to 50°C, then add 25 parts by mass of alkyd resin (brand AK2380A, produced by Tongde Chemical Co., Ltd.), and then add 17 parts by mass of cadmium f...
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