The invention provides a manufacturing method of a
semiconductor device, which comprises the following steps of: providing a
semiconductor substrate comprising a first pattern region and a second pattern region, and performing floating gate
polycrystalline silicon deposition on the
semiconductor substrate to form a first
polycrystalline silicon layer; the pattern density of the first pattern area is greater than that of the second pattern area; performing
ion implantation on the first
polycrystalline silicon layer, and forming an
oxide layer on the top surface of the first polycrystalline
silicon layer; protecting the
oxide layer of the second pattern area and
etching the
oxide layer of the first pattern area; performing chemical mechanical
polishing treatment on the first polycrystalline
silicon layer in the first pattern area and the oxide layer and the first polycrystalline
silicon layer in the second pattern area; and generating the
semiconductor device based on the first polycrystalline silicon layer after the chemical mechanical
polishing treatment. The thickness of the polycrystalline silicon layer in the areas with different pattern densities can be ensured to be consistent, so that the reliability of the
semiconductor device is improved, and the process is simple and convenient, high in flexibility and easy to implement.