Method and device for reducing crystal subfissure of straightened silicon core rod

Abstract

The invention provides a method and device for reducing subfissure of a straightened silicon core rod crystal, and the method comprises the following steps: introducing cooling water into single crystal furnace equipment for preparing the silicon core rod crystal, so that the temperature of the single crystal furnace equipment is controlled within a preset range; a curing felt and a heat shield device are arranged at the upper part of a guide cylinder of the single crystal furnace equipment; starting the single crystal furnace equipment to enter a crystal growth stage; after the crystal growth stage is completed, the prepared silicon core rod crystal is separated from the liquid level to a preset height, meanwhile, the power of the single crystal furnace equipment is reduced, and after the silicon core rod crystal is cooled for a preset time, the power is turned off; the silicon core rod crystal needs to stand within a preset time and is discharged out of the furnace. By means of the method for reducing the subfissure of the straightened silicon core rod crystal and the device for executing the method, the defects of subfissure, cracks and the like in the straightening process of the silicon core rod crystal are effectively reduced, the prefabrication process of the silicon core rod crystal is not limited to single crystals, and therefore the difficulty of preparing the silicon core rod crystal is reduced.

Description

technical field [0001] The invention relates to the technical field of polysilicon, relates to a method for straightening the crystal of a silicon mandrel, and more particularly, to a method and a device for reducing the cracking of the straightened silicon mandrel crystal. Background technique [0002] The silicon core is the carrier for the production of polysilicon by vapor phase (CVD) deposition in the reduction furnace, and the Czochralski method is one of the common methods for producing solar silicon cores. [0003] At present, most of the polysilicon factories at home and abroad use the process method and thermal field system for the production of solar single crystal in the production of silicon mandrel crystals. high speed. [0004] In practical applications, the drawing of silicon mandrel crystal is not limited to single crystal, but also polycrystalline. If it is polycrystalline, due to the difference in crystal orientation between polycrystalline and single cry...

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Problems solved by technology

[0015] Although the above-mentioned patents disclose devices and methods for eliminating cracks in silicon core rod crystals, there is no mention of the preparation of silicon core rod crystals with large diameters, and the properties of silicon core rod crystal cracks increase with the increase in the diameter of the preparation, The continuous lengthening of the length makes the original hidden cracks and cracks of the silicon core rod crystal more prominent

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