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Method for improving mark point hidden crack

A cracking, midpoint technology, applied in welding equipment, laser welding equipment, metal processing equipment, etc., can solve problems such as cracking, and achieve the effect of reducing the rate of cracking

Inactive Publication Date: 2019-11-19
阜宁苏民绿色能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention provides a method for improving the hidden cracks of mark points, and solves the technical problem that there is a risk of hidden cracks due to repeated wiring to ensure the clarity of mark points

Method used

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  • Method for improving mark point hidden crack
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Step 1. Adjust the laser parameters. The Power Factor of the laser is set to 50, and the PRF is set to 0.

[0033] Step 2: Set the parameters of the laser for laser scanning, set the frequency of the laser to 130kHz, the PowerFactor to 130kHz, the feed speed to 200mm / s, and the power to 100%.

[0034] Step 3: Use the software to draw the mark point, first draw a horizontal line, set the coordinates of the midpoint of the horizontal line as (0, 0), and the length of the horizontal line as 0.5mm.

[0035] Step 4. Draw a vertical line above the horizontal line in Step 3. The midpoint coordinates of the vertical line are (0, 0.14) and the length is 0.22mm.

[0036] Step 5. Draw a vertical line below the horizontal line in step 3. The midpoint coordinates of the vertical line are (0, -0.14) and the length is 0.22mm.

[0037] Step 6. Combine the above-mentioned one horizontal line and two vertical lines to form a mark point, and copy three mark points.

[0038] Step 7. The ...

Embodiment 2

[0041] Step 1. Adjust the laser parameters. The Power Factor of the laser is set to 50, and the PRF is set to 0.

[0042] Step 2: Set the parameters of the laser for laser scanning, set the frequency of the laser to 130kHz, the PowerFactor to 130kHz, the feed speed to 200mm / s, and the power to 100%.

[0043] Step 3: Use the software to draw the mark point, first draw a horizontal line, set the coordinates of the midpoint of the horizontal line as (0, 0), and the length of the horizontal line as 0.5mm.

[0044] Step 4. Draw a vertical line above the horizontal line in Step 3. The midpoint coordinates of the vertical line are (0, 0.145) and the length is 0.21mm.

[0045] Step 5. Draw a vertical line below the horizontal line in step 3. The midpoint coordinates of the vertical line are (0, -0.145) and the length is 0.21mm.

[0046] Step 6. Combine the above-mentioned one horizontal line and two vertical lines to form a mark point, and copy three mark points.

[0047] Step 7. Th...

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Abstract

The invention discloses a method for improving a mark point hidden crack. The method comprises the following steps that parameters of a laser device are adjusted, wherein the power factor of the laserdevice is set to 50, and the PRF is set to 0; the parameters of the laser device are set to be controlled from external control to internal control, so that the problems that double superposition iscaused on the parameters of the laser device and internal parameters of a graph, and laser energy is aggravated and struck on a silicon wafer to cause the hidden crack are avoided; four mark points are prepared by laser scanning, wherein the mark points are composed of a transverse line and two vertical lines, the two vertical lines are located on the two sides of the transverse line correspondingly, the vertical lines are perpendicular to the transverse line and located on the central line of the transverse line, and the vertical distances from the end points, close to the transverse line, ofthe two vertical lines to the transverse line are equal and greater than zero; and the mark points are transversely punched once, the vertical lines are divided into two sections which are not overlapped with the transverse line and are respectively punched once. The defect of hidden cracks at overlapped positions caused by repeated punching is effectively avoided, the hidden crack ratio is reduced, and meanwhile the printing grab points are not influenced.

Description

technical field [0001] The invention belongs to the technical field of solar photovoltaic cell manufacturing, and in particular relates to a method for improving hidden cracks in mark points. Background technique [0002] The improvement of solar cell efficiency is the key to promote the development of photovoltaic industry. Selective emitter structure cell is a kind of high-efficiency cell that is very effective in improving efficiency and is being applied to industrialization on a large scale. Laser-doped phosphosilicate glass is currently the most used in the industry, and it is also the cheapest and simplest method for making selective emitters. The biggest difficulty of this technology is how to accurately print the grid lines in the heavily doped region. The current solution to alignment is as figure 1 As shown, four marks are left at fixed positions on the surface of the silicon wafer when the laser is used. Before printing, a camera is used to capture the marks, an...

Claims

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Application Information

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IPC IPC(8): B23K26/53
CPCB23K26/53
Inventor 顾成阳李影宛正
Owner 阜宁苏民绿色能源科技有限公司
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