Gallium nitride-based vertical structure light emitting diode with current blocking layer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based vertical structure light-emitting diode with a current blocking layer, which comprises a conductive substrate located at a bottom layer, a second welding layer located on the surface of the conductive substrate, a first welding layer located on the surface of the second welding layer, a diffusion barrier layer located on the surface of the first welding layer, a nickel-silver reflecting layer located on the surface of the diffusion barrier layer, an Al layer located on the surface of the diffusion barrier layer, a gallium nitride-based light-emitting epitaxial layer located on the surfaces of the nickel-silver reflecting layer and the Al layer and a n electrode located on the surface of the light-emitting epitaxial layer, wherein the Al metallayer is located in a projection area below the n electrode, the Al metal layer serves as a current blocking layer to change current injection, and the light-emitting efficiency is improved.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a gallium nitride-based vertical structure light-emitting diode with a current blocking layer and a manufacturing method thereof. Background technique [0002] In recent years, vertical structure LEDs have won a place in the market because of their good performance under high current injection. Vertical structure LEDs remove the growth substrate and transfer the gallium nitride-based light-emitting layer to a secondary substrate with better thermal conductivity. , which improves its heat dissipation performance under high current conditions. In addition, because its electrodes are in an up-and-down structure, there is no current crowding effect. Compared with traditional formal structure LEDs, vertical structure LEDs have obvious advantages under high current conditions. Therefore, its in High-power fields, such as high-brightness torches, are widely used. [0003] Beca...

AI Technical Summary

Problems solved by technology

The CN200810237845 patent proposes a solution that uses a diffusion barrier layer in a local area and Ag to degrade through high-temperature annealing. When this solution is implemented, it must be ensured that Au will diffuse to the surface of the current blocking area, and the reflectivity of Au is lower than that of Ag, resulting in current blocking. Regional reflectivity decreases, reducing light extraction efficiency

The published application number 201811636723.5 is similar to the present invention, but the structure is slightly complicated. It uses one or more layers of transparent dielectric materials as the current blocking layer. When using dielectric materials as the current blocking layer, because semiconductors are commonly used The thermal expansion coefficient difference between the dielectric material and the metal material is large, and its adhesion to the metal is not good. When bonding, the bonding is difficult, and the bonding failure is prone to occur, causing the light-emitting layer to fall off.

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