Method and device for reading data
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUAWEI TECH CO LTD
- Publication Date
- 2018-03-06
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Abstract
Description
technical field
[0001] The present application relates to the field of storage, in particular to a method and device for reading data. Background technique
[0002] At present, each floating gate transistor used for storage on a solid state drive (English: Solid State Drive, referred to as: SSD) can store 2 or 3 bits (English: bit), and the bit stored on each floating gate transistor are respectively distributed in different pages (English: page), so that the pages in each block are divided into different 2 or 3 categories according to the storage positions of the floating gate transistors.
[0003] Taking multi-level cell storage (English: Multi Level Cell, referred to as: MLC) as an example, the two bits of the floating gate transistor are called the least significant bit (English: Least Significant Bit, referred to as: LSB) and the most significant bit (English: : Most Significant Bit, referred to as: MSB), so the pages distributed in different bits of the floating gate ...