Method and device for reading data

A technology for reading data and data, which is applied in the field of reading data and can solve problems such as reading errors
CN104503707BActive Publication Date: 2018-03-06HUAWEI TECH CO LTD

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
HUAWEI TECH CO LTD
Publication Date
2018-03-06

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The present application discloses a method and device for reading data, wherein, the method includes: when receiving a read command including a read target address, judging whether the read target address points to a cache in the preset buffer area If there is, find the cache address corresponding to the read target address according to the first mapping relationship, and read the data pointed to by the cache address in the preset cache area, wherein the first The mapping relationship is used to record the corresponding relationship between the target address and the cache address; if not, read the data pointed to by the read target address from the non-volatile storage space. Through the above manner, errors in reading data caused by write interference can be reduced.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present application relates to the field of storage, in particular to a method and device for reading data. Background technique

[0002] At present, each floating gate transistor used for storage on a solid state drive (English: Solid State Drive, referred to as: SSD) can store 2 or 3 bits (English: bit), and the bit stored on each floating gate transistor are respectively distributed in different pages (English: page), so that the pages in each block are divided into different 2 or 3 categories according to the storage positions of the floating gate transistors.

[0003] Taking multi-level cell storage (English: Multi Level Cell, referred to as: MLC) as an example, the two bits of the floating gate transistor are called the least significant bit (English: Least Significant Bit, referred to as: LSB) and the most significant bit (English: : Most Significant Bit, referred to as: MSB), so the pages distributed in different bits of the floating gate ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More