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Resistor type random access memory operation method

A resistive random access memory technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as confirmation failure and poor reading stability

Active Publication Date: 2016-10-19
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides an operation method of a resistive random access memory, which solves the problems of frequent confirmation failure and poor reading stability when reading a resistive random access memory in the prior art

Method used

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  • Resistor type random access memory operation method
  • Resistor type random access memory operation method
  • Resistor type random access memory operation method

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Embodiment Construction

[0034] In order to make the purpose, features and advantages of the present invention more comprehensible, specific embodiments of the present invention are listed below, together with the accompanying drawings, for detailed description as follows. Although the present invention is disclosed as follows with preferred embodiments, it is not intended to limit the scope of the present invention. Any person skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore The scope of protection of the present invention should be defined by the scope of the patent application.

[0035] figure 2 It is a schematic diagram of the resistive random access memory 10 provided by the present invention. In one embodiment, the RRAM 10 includes a transistor element 12 and a resistor element 14 . For example, the resistor element 14 is an adjustable resistor. like figure 2 As shown, the drain (ie, the first side) o...

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Abstract

The present invention provides a resistor type random access memory operation method, which comprises: providing a reset voltage pulse to a resistor type random access memory; providing an emulated voltage pulse to the resistor type random access memory; and providing an acknowledgment voltage pulse to the resistor type random access memory, and reading the reset current of the resistor type random access memory when the acknowledgment voltage pulse is provided, wherein the voltage level of the acknowledgment voltage pulse is greater than the voltage level of the provided reading voltage pulse for reading the resistor type random access memory. With the method of the present invention, the confirmation failure during the reading can be reduced, and the reading stability can be increased.

Description

technical field [0001] The present invention relates to a method of operating a resistive random access memory (RRAM). More specifically, the present invention relates to an operation method for improving read accuracy of RRAM. Background technique [0002] Generally speaking, memory can be mainly divided into volatile memory (Volatile memory) and non-volatile memory (Non-Volatile memory). As far as non-volatile memory is concerned, flash memory (Flash Memory) is the most widely used nowadays. However, flash memory has disadvantages such as high operating voltage, slow operating speed and low endurance. In advanced memory research, resistive random access memory (RRAM) is one of the widely researched items. Resistive random access memory has the advantages of simple structure, low operating voltage, fast operating time, multi-bit memory, good durability, small memory element area, non-destructive reading, and low cost. [0003] Although the programming voltage pulse of R...

Claims

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Application Information

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IPC IPC(8): G11C13/00
Inventor 吴健民
Owner WINBOND ELECTRONICS CORP
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