Semiconductor device and manufacturing method, and electronic device

Abstract

The invention provides a semiconductor device and a manufacturing method, and an electronic device and relates to the semiconductor technology field. The semiconductor device comprises the first conductive type of a semiconductor substrate, a grid structure, a source electrode and a drain electrode, and a groove contact, wherein the grid structure is formed on the semiconductor substrate; the source electrode and the drain electrode are formed in the semiconductor substrate of the two sides of the grid structure, an interval exists between the drain electrode and the grid structure, and the extension direction of a connection line between the source electrode and the drain electrode is defined as a first direction; the groove contact is formed in the semiconductor substrate between the grid structure and the drain electrode; the groove contact includes a main body portion and several comb teeth connected to the main body portion; and the at least one side of the main body portion, which is along with the first direction, is provided with the comb teeth. By using the groove contact of the semiconductor device, the margin of a manufacturing technology can be improved, the key size ofthe groove contact can be reduced, and a problem that an active area and a polycrystalline silicon grid are damaged during groove contact manufacturing can be effectively solved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] LDMOS (Laterally Diffused Metal Oxide Semiconductor; laterally diffused metal oxide semiconductor), as one of the important components of power devices, has broad application prospects. Since LDMOS devices are usually used in power circuits, such as RF technology and power MOSFET devices, power circuits need to obtain high-voltage power amplification and large output power, so LDMOS devices must be able to withstand higher voltages. As LDMOS is widely used in power integrated circuits, the requirements for the performance of LDMOS devices are getting higher and higher, which requires a higher breakdown voltage (BV) of LDMOS devices, and may also require an increase in threshold drift. In conclusion, the demand for LDMOS devices with higher breakdown volt...

AI Technical Summary

Problems solved by technology

[0003] During the development of the LDMOS device process, a trench contact (trench CT) process was produced. The trench contact as a shield can improve the breakdown voltage performance of the LDMOS device, and at the same time compared with other shielding methods (such as requiring an additional mask layer To form a metal or polysilicon shielding process), this process can also save a mask layer, but the current trench contact process also encounters various challenges in the implementation, for example, in the trench etching process, It is easy to over-etch the polysilicon gate near the trench, resulting in polysilicon damage, and may even cause etching damage to the active area, thereby affecting the overall performance and yield of the device

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