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461results about How to "High sensitivity detection" patented technology

Surface-enhanced Raman scattering optical fiber probe

The invention relates to a surface-enhanced Raman scattering optical fiber probe, comprising an optical fiber which can be simultaneously used for transmitting exciting light and receiving Raman scattering spectrum, a tapered optical fiber and one quartz microballoon, wherein the tapered optical fiber is formed on one end of the optical fiber, and then one quartz microballoon is thermally welded on the tip of the tapered optical fiber; when the exciting light passes through the tapered optical fiber and the quartz microballoon, evanescent waves transmitted by the tapered optical fiber and the quartz microballoon can excite the Raman spectrum of a solution or a gas molecule to be tested; meanwhile, metal nano particles are coated on the optical fiber and the surface of the quartz microballoon, so that the Raman scattering strength can be enhanced. In addition, a sensing structure of the combination of the tapered optical fiber and the quartz microballoon also has the functions of reflecting, focusing and collecting the surface-enhanced Raman scattering spectrum. The optical fiber probe is combined with a monochromatic source and a high-sensitivity Raman spectrometer so that a Raman detection sensing device can be formed. The invention has simple structure, strong capacity of resisting disturbance and high sensitivity, thereby being suitable for information acquisition and transmission of on-line analysis occasions, real-time detection occasions, live sample analysis occasions, trace hazardous and noxious substance measurement occasions and the like.
Owner:SHANGHAI UNIV

Metal oxide-metal-organic frameworks (MOX@MOFs) nanometer core-shell structure one-dimensional array as well as preparation method and application thereof

The invention provides an MOX@MOFs (metal oxide-metal-organic frameworks) nanometer core-shell structure one-dimensional array film which is characterized in that the film thickness is 2 to 4 micrometers, and the film is formed by a one-dimensional MOX@MOFs core-shell structure, wherein the diameter of a core MOX nanowire is 50 to 100nm, the thickness of a shell MOFs can be adjusted between 1nm to 200nm, metal nodes and organic chains of the MOFs can be adjusted. A typical preparation method comprises the steps of setting an MOX face of a ZnO one-dimensional array film downwards, adding into a mixed solution of water in which zinc salt, cobalt salt and organic ligands are dissolved and DMF, sealing a reaction still, then heating for reacting, after reacting, washing the surface of a compound array film, and drying the film in the air. The MOX@MOFs core-shell structure one-dimensional array film provided by the invention has excellent gas-sensitive property, not only can humidity interference be selectively eliminated, but also the working temperature can be reduced and the sensitivity can be improved through a Co catalysis. Meanwhile, the film also has the advantages that the method is simple, and the cost is low.
Owner:FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI

Method for measuring clearance in proximity nanometer lithography

The invention discloses a method for measuring clearance in proximity nanometer lithography and mainly aims at the controlling of the clearance of a masking silicon wafer in nanometer manufacturing technology, such as nano-imprint, wave zone plate array imaging and the like. The basic process of the method can be simply explained in the picture 1 that: incident plane waves pass through a silicon wafer gratings and a mask grating and diffract for multiple times, wherein the two periods of the gratings are approximate and the two gratings are overlapped with a certain gap; two beams of lateral diffracted light from the two gratings interfere with each other and are superposed, and form Moire interference fringes of which the period is amplified relative to the conventional gratings on the surfaces of the silicon wafer grating; and the fringes are imaged on a CCD image detector through an objective lens with certain multiplying power. The change of the gap between the two gratings causes the change of optical path difference of the two beams and then causes the change of the movement or phases of the interference fringes so that the aim of measuring the gap is fulfilled; the more approximate the period is, the higher the sensitivity of the measurement is; and, at the same time, because the periods of the two gratings are approximate, the included angle between the lateral diffracted light is very small, the frequency of the interference fringes is very low (namely, the period is long), and the requirement on the numerical aperture of the objective lens is low. With the development of microfabrication technology, the machining accuracy of the grafting is higher and the method has great significance for gap measurement in proximity nanometer lithography and the related field.
Owner:INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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