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Preparation method of ITO thin film

A thin film and solution technology, which is applied in the manufacture of cables/conductors, conductive layers on insulating carriers, electrical components, etc., can solve the problems of difficult control of doping amount, complicated operation, high resistivity, etc., and achieve easy control of doping amount, The preparation method is simple and the particles are dense

Inactive Publication Date: 2015-01-28
徐东
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, in the research of ion-doped ITO thin films, most of them focus on the research of W:ITO, B:ITO, and Zr:ITO thin films, but their resistivity is high, the lowest can only reach 10-3 level, and it has complex operation, doping Impurities are difficult to control

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  • Preparation method of ITO thin film
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  • Preparation method of ITO thin film

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preparation example Construction

[0023] The embodiment of the present invention provides a preparation method of an ITO thin film, and the preparation method is described in figure 1 shown. The preparation method of the ITO film comprises the following steps:

[0024] S01. Preparation of ITO sol: dissolve indium chloride in acetylacetone, stir and heat to obtain indium chloride solution, and then dissolve stannous chloride in absolute ethanol to obtain stannous chloride solution. After the indium chloride solution and the stannous chloride solution are mixed and stirred, a mixed solution containing indium chloride and stannous chloride is obtained, and then a stabilizer and a surfactant are added for aging treatment to obtain an ITO sol;

[0025] S02. Preparation of ITO thin film: the ITO solution is subjected to high temperature preheating treatment after pulling the coating film at least once on the substrate, and then annealing treatment is performed to obtain an ITO thin film, wherein the method of the h...

Embodiment 1

[0044] (1) Preparation of ITO sol: Dissolve indium chloride in acetylacetone at 55°C and heat under reflux for 2 hours, dissolve stannous chloride dihydrate in a small amount of absolute ethanol, and then mix and stir the two solutions at room temperature. Sn / (Sn+In)=5%, add stabilizer and corresponding surfactant, continue to stir for 2h, and obtain ITO sol after aging for 5h;

[0045] (2) Matrix treatment: first, ultrasonically clean the quartz glass for 30 minutes, rinse it with deionized water several times, then put it into acetone to cook for 15 minutes, and finally rinse it with methanol and deionized water in sequence, and then dry it in an oven at 70°C with nitrogen blowing;

[0046] (3) Pulling the coating film: ITO thin film was prepared by dipping and pulling technique, the quartz glass substrate was immersed in the gel vertically for 2 minutes, and then pulled at a uniform speed of 5cm / min to obtain a uniform gel film;

[0047] (4) Heat treatment: The gel film obt...

Embodiment 2

[0050] (1) Preparation of ITO sol: Dissolve indium chloride in acetylacetone at 60°C and heat under reflux for 2 hours, dissolve stannous chloride dihydrate in a small amount of absolute ethanol, and then mix and stir the two solutions at room temperature. / (Sn+In)=10%, add stabilizer and corresponding surfactant, continue to stir for 2h, and get ITO sol after aging for 5h;

[0051] (2) Matrix treatment: first, ultrasonically clean the quartz glass for 30 minutes, rinse it with deionized water several times, then put it into acetone to cook for 15 minutes, and finally rinse it with methanol and deionized water in sequence, and then dry it in an oven at 70°C with nitrogen blowing;

[0052] (3) Pulling the coating film: The ITO film was prepared by dipping and pulling technology, the quartz glass substrate was immersed in the gel vertically for 2 minutes, and the uniform sol film was obtained by pulling at a uniform speed of 10cm / min;

[0053] (4) Heat treatment: The gel film ob...

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Abstract

The invention belongs to the field of photoelectric materials, and provides a preparation method of an ITO thin film. The preparation method of the ITO thin film comprises the following steps that an indium source and a tin source are dissolved to prepare an indium source and tin source mixture organic solution, stabilizers and surfactants are added for ageing processing, and then ITO sol is obtained; after one time of pulling coating is conducted on the ITO solution on a base body, high-temperature preheating processing is conducted, then annealing processing is conducted, and the ITO thin film is obtained. The high-temperature preheating processing method comprises the step of preheating the base body coated with the ITO solution for 30 min in a muffle furnace at the temperature of 400-600 DEG C in the air atmosphere. According to the preparation method of the ITO thin film, the ITO thin film is prepared by the adoption of the sol-gel dip-coating technology. The preparation method is simple, the doping amount is easy to control, the obtained ITO thin film is flat in surface and compact in particle, the transmittance in the visible light region of the obtained ITO thin film reaches 90%, the electrical resistivity of the obtained ITO thin film reaches 4-10 levels, the power function of the obtained ITO thin film reaches 4.9 eV, and the requirement for thin film electrodes of solar cells can be met.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials, and in particular relates to a preparation method of an ITO thin film. Background technique [0002] IndiumTinOxide (ITO) is an n-type semiconductor material with high electrical conductivity, high visible light transmittance, high mechanical hardness and excellent chemical stability. It is mainly used in the field of optoelectronic devices, especially It is the most commonly used thin film material for transparent electrodes of liquid crystal displays, plasma displays, electroluminescence displays, touch screens, solar cells and other electronic instruments in the fields of flat panel displays, thin film solar cells, etc. [0003] The main performance indicators of ITO films in product applications are transmittance and resistivity. In order to improve the optical properties and electrical properties of ITO films and meet the performance requirements of related products, at this stage, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B13/00
Inventor 徐东任昌义
Owner 徐东
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