Preparation method of boron-doped graphene film

Abstract

The invention provides a preparation method of a boron-doped graphene film. The preparation method comprises the following steps: 1) providing a substrate, and putting the substrate in a double-temperature-region system; and 2) providing a boron carbon solid source, putting the boron carbon solid source in the double-temperature-region system, and heating to deposit and form the boron-doped graphene film on the substrate surface. By using the growth of the boron-doped graphene film as the study subject, the existing preparation method is improved. The unique solid source is used as the carbon boron source in the preparation process to prepare the large-area high-quality graphene film at lower temperature by a one-step process; and meanwhile, the reaction temperature, reaction time, source temperature and other technological conditions are controlled to control the boron doping amount, thereby lowering the reaction temperature, saving the energy consumption and simplifying the related preparation techniques. Therefore, the method is completely suitable for preparing the large-area high-quality controllable-doping-amount boron-doped graphene film at low temperature, and can easily implement industrialized production.

Description

technical field [0001] The invention relates to the field of material preparation and processing, in particular to a method for preparing a boron-doped graphene film. Background technique [0002] Graphene is made of sp 2 It is a two-dimensional monoatomic layer crystal material formed by a network of hybridized carbon atoms. This unique microstructure endows it with many excellent physical and chemical properties. Graphene has high carrier mobility, high thermal conductivity, high Young's modulus and fracture stress, and high specific surface area, coupled with its good flexibility and light transmission, making it the most developed One of the promising nanomaterials. Graphene has shown broad prospects in many fields such as high-performance composite materials, flexible displays and flexible electronic devices, electrochemical energy storage, photoelectric detection and sensors, and has received extensive attention internationally. [0003] Since graphene is a semicond...

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Problems solved by technology

[0006] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of preparation method of boron-doped graphene thin film, for solving the reaction that adopts chemical vapor deposition to prepare boron-doped graphene thin film in the prior art. The mechanism is difficult to control, there are many defects in graphene and the boron doping concentration is not easy to control, etc.

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