Preparation method of boron-doped graphene film

Abstract

The invention provides a method for preparing a boron-doped graphene film, comprising: 1) providing a substrate, placing the substrate in a dual-temperature zone system; 2) providing a boron-carbon solid source, and placing the boron-carbon The solid-state source is placed in the dual temperature zone system and heated to deposit and form a boron-doped graphene film on the surface of the substrate. The invention takes the growth of boron-doped graphene film as the research object, and improves the existing preparation method. By selecting the only solid source as the carbon and boron source in the preparation process, a large-area high-quality graphene film can be obtained at a relatively low temperature in one step. At the same time, through the control of process conditions such as reaction temperature, reaction time and source temperature Controlling the doping amount of boron not only reduces the reaction temperature, saves energy consumption, but also simplifies the related preparation process. Therefore, the present invention is completely suitable for preparing boron-doped graphene films with large area, high quality and controllable doping amount at low temperature, and is easy for industrial production.

Description

technical field [0001] The invention relates to the field of material preparation and processing, in particular to a method for preparing a boron-doped graphene film. Background technique [0002] Graphene is made of sp 2 It is a two-dimensional monoatomic layer crystal material formed by a network of hybridized carbon atoms. This unique microstructure endows it with many excellent physical and chemical properties. Graphene has high carrier mobility, high thermal conductivity, high Young's modulus and fracture stress, and high specific surface area, coupled with its good flexibility and light transmission, making it the most developed One of the promising nanomaterials. Graphene has shown broad prospects in many fields such as high-performance composite materials, flexible displays and flexible electronic devices, electrochemical energy storage, photoelectric detection and sensors, and has received extensive attention internationally. [0003] Since graphene is a semicond...

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Problems solved by technology

[0006] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of preparation method of boron-doped graphene thin film, for solving the reaction that adopts chemical vapor deposition to prepare boron-doped graphene thin film in the prior art. The mechanism is difficult to control, there are many defects in graphene and the boron doping concentration is not easy to control, etc.

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