Method for preparing nitrogenous dopant for preparing czochralski silicon single crystal

A technology of nitrogen doping and Czochralski silicon, applied in the directions of single crystal growth, diffusion/doping, chemical instruments and methods, etc.

Active Publication Date: 2010-03-17
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In silicon single crystals manufactured by the Czochralski method, various native defects are formed that pose problems in the device manufacturing process

Method used

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  • Method for preparing nitrogenous dopant for preparing czochralski silicon single crystal

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Experimental program
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Embodiment 1

[0024] Put 15kg of polysilicon and 2.5g of silicon nitride powder into a 14-inch quartz crucible, position the quartz crucible at -100mm, keep the crucible at 0 rpm, and heat the heater with a power of 110kw. After the polycrystal is completely melted, turn the crucible at 10rpm and reduce the power of the heater to 105kw to keep the melt surface temperature between 1450°C and 1470°C. After the silicon nitride particles floating on the surface of the melt are all melted, keep the temperature for 1 hour, then raise the crucible to the crucible position of 150mm, and open the flow rate of argon to 100slpm, so that the melt is cooled rapidly. Break the nitrogen-containing dopant obtained by cooling with a silicon carbide hammer into 1~2cm 3 Then soak it in chemically pure hydrofluoric acid for 24 hours to remove the silicon dioxide on the surface of the nitrogen-containing dopant. After soaking, the nitrogen-containing dopant is rinsed with pure water for 5 times, and finally put...

Embodiment 2

[0026] Put 25kg of polysilicon and 4.2g of silicon nitride powder into a 20-inch quartz crucible, position the quartz crucible at the -70mm crucible position, keep the crucible at 0 rpm, and heat the heater with a power of 110kw. After the polycrystal is melted, the crucible is rotated at 12rpm, and the power of the heater is reduced to 107kw to keep the melt surface temperature between 1450°C and 1470°C. After the silicon nitride particles floating on the surface of the melt are completely melted, keep the temperature for 2 hours, then raise the crucible to the crucible position of 300mm, and open the flow rate of argon to 200slpm to cool the melt rapidly. Break the nitrogen-containing dopant obtained by cooling with a silicon carbide hammer into 1~2cm 3 Then soak it in chemically pure hydrofluoric acid for 24 hours to remove the silicon dioxide on the surface of the nitrogen-containing dopant. After soaking, the nitrogen-containing dopant is rinsed with pure water for 5 time...

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Abstract

The invention relates to a method for preparing nitrogenous dopant for preparing a czochralski silicon single crystal, which comprises the following steps: (1) placing a polysilicon material and high-purity silicon nitride particles into a crucible, heating to 1,450 DEG C so that a polycrystal is melted and then maintaining the melting state of fusant at 1,450-1,470 DEG C; maintaining the cruciblerevolution of 10-12 rpm; (2) leading the mass ratio of the polysilicon material and the high-purity silicon nitride particles to be 6,000/1-5,500/1; (3) after the silicon nitride particles floating on the surface of the fusant are completely melted, preserving the temperature for 1 to 2 hours; (4) raising the crucible to the crucible level of 100mm-400mm and switching the flow of argon to 100slpm-400slpm so that the fusant is rapidly cooled; (5) crushing the obtained cooled nitrogenous dopant into small blocks by a silicon carbide hammer and uniformly mixing; (6) soaking by chemical pure hydrofluoric acid to remove silicon dioxide on alloy, washing the soaked dopant by pure water and placing into an oven for standby after being dried. The method is simple and convenient, a nitrogen element is mixed into the crystal by the nitrogenous dopant without an additional device and a working procedure, and the mixing dosage in the crystal is easy to control, thereby achieving the prospective mixing requirement.

Description

technical field [0001] The invention relates to a method for preparing a dopant used in the preparation of a Czochralski silicon single crystal, in particular to the preparation of a nitrogen-containing dopant in a silicon single crystal. Background technique [0002] Most semiconductor silicon single crystals are produced by the Czochralski method. In this method, polysilicon is heated and melted in a quartz crucible, and then the temperature of the silicon melt is slightly lowered to give the silicon melt a certain degree of supercooling. A silicon single crystal (called a seed crystal) with a specific crystal orientation is brought into contact with a silicon melt, and by adjusting the temperature of the melt and the speed at which the seed crystal is lifted upwards, when the seed crystal grows to a diameter close to the target, increase the lifting speed so that Crystals grow with a near constant diameter. At the end of the growth process, when the silicon melt in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B31/00
Inventor 韩海建戴小林吴志强王学峰
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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