Preparation method for Ag-Al co-doped p type ZnO film

Abstract

The invention relates to a preparation method for an Ag-Al co-doped p type ZnO film, which comprises the following steps: weighting a right amount of precursor zinc salt; taking an organic solvent with corresponding volume; dissolving the zinc salt into the organic solvent; adding diethanolameine as a stabilizing agent, wherein the mole weight of the diethanolameine is equal to the mole weight of zinc ions; adopting water-bath heating and continuously stirring; adding doped source aluminum nitrate and silver nitrate, and continuously stirring; taking out a solution, ageing into sol, coating a film on a substrate, and then pre-processing; and performing annealing treatment, thereby obtaining the required film. The preparation method is simple in process; the cost of equipment is low; the required raw materials are easily obtained; the uniformity of the film is excellent; the preparation method can be applied to industrialized production; and the application prospect is wide.

Description

technical field [0001] The invention relates to a method for preparing an Ag-Al co-doped p-type ZnO thin film, belonging to the technical field of chemistry and chemical engineering. Background technique [0002] The research on modern sol-gel technology began in the middle of the 19th century, using sol and gel to prepare single-component compounds. Because the temperature required to prepare glass by this method is much lower than that of the traditional high-melting method, it is also called the low-temperature synthesis method of glass. In 1939 W. Geffcken and E. For the first time, Berger used the sol-gel dipping method to coat glass plates, prepared a coating that changes the optical reflection properties of glass, and obtained a patent, and proposed the sol-gel dipping coating process for the first time in the patent literature. In 1959, German Special Glass AG began mass production of automotive rearview mirrors using sol-gel dipping coating technology. In 1962 H...

AI Technical Summary

Problems solved by technology

It can be seen from theoretical knowledge that because there are more intrinsic defects in ZnO, it has a high self-compensation effect on acceptor-doped ions, and the solid solubility of acceptor impurities is very low, making it difficult to achieve p-type transition, thus making semiconductor devices The p-n structure of ZnO, one of the core components, cannot be made, so the development and application of ZnO-based optoelectronic components are greatly restricted

Images