Graphene doping material, and preparation method and application of graphene doping material

A technology of doping materials and graphene, which is applied in the direction of cable/conductor manufacturing, carbon-silicon compound conductors, electrical components, etc., which can solve the problems of limiting the application of graphene and reducing the square resistance, so as to achieve easy control of coating thickness and improvement of conductivity , combined effect

Active Publication Date: 2013-11-20
2D CARBON CHANGZHOU TECH INC
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After doping graphene with chloroauric acid, its square resistance decreases significantly, which can reach 1 / 3 of that without doping. However, chloroauric acid is extremely sensitive to UV light, and the square resistance will increase after exposure to light.
Therefore, its sensitivity to ultraviolet light limits the application of graphene in many electronic components.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene doping material, and preparation method and application of graphene doping material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0019] Take the graphene film with glass substrate, the number of graphene layers is 2 layers; molybdenum trioxide powder;

[0020] Prepare molybdenum trioxide-doped graphene material according to the following steps: (1) Put the graphene film with the substrate into the vacuum chamber of the thermal evaporation apparatus and then evacuate it, the vacuum degree is 1*10 -4 Pa; (2) Evaporation, adjust the current to 90A to heat and dissolve the molybdenum oxide solid powder, molybdenum trioxide is evaporated and deposited on the graphene film at about 700 ° C, and the molybdenum trioxide is isolated by the baffle of the thermal evaporation apparatus to control the trioxide The thickness of the molybdenum layer is 10 nm in thickness. When in use, the molybdenum trioxide-doped graphene material obtained in this embodiment can be used as the base electrode of the touch screen.

Embodiment 2）

[0022] Get graphene film with PET substrate, graphene layer number is 3 layers; Potassium bromide powder;

[0023] Prepare potassium bromide-doped graphene materials according to the following steps: (1) Put the graphene film with the substrate into the vacuum chamber of the thermal evaporation apparatus and then evacuate it, and the vacuum degree is 1*10 -5 Pa; (2) Evaporation, adjust the current to 100A to heat and dissolve the solid powder of potassium bromide, the potassium bromide is evaporated and deposited on the graphene film at about 730°C, and the potassium bromide is isolated by the baffle of the thermal evaporation instrument to control the bromine The thickness of the potassium oxide layer is 10 nm in thickness. When in use, the potassium bromide-doped graphene material obtained in this embodiment can be used as the base electrode of the touch screen.

Embodiment 3）

[0025] Take the graphene film with glass substrate, the number of graphene layers is 2 layers; molybdenum dioxide powder;

[0026] Prepare molybdenum dioxide-doped graphene materials according to the following steps: (1) Put the glass substrate into the vacuum chamber of the thermal evaporation apparatus and then evacuate it, adjust the current to 100A to heat and dissolve the dopant molybdenum dioxide powder and evaporate it with a thermal evaporation apparatus Plating a molybdenum dioxide layer with a thickness of 20 nanometers to form a molybdenum dioxide glass substrate; (2) transfer the graphene film on the aforementioned molybdenum dioxide glass substrate; Anneal for 6 hours.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
electrical resistanceaaaaaaaaaa
electrical resistanceaaaaaaaaaa
Login to view more

Abstract

The invention relates to a graphene doping agent, a graphene doping process and the application of a doped graphene material. A doping process can be completed by using processes such as a dry process (including thermal evaporation and sputtering) or a wet process (including spinning, electrochemical deposition and solution soaking). By virtue of the graphene doping agent, the sheet resistance of a graphene film with a substrate is reduced from about 830 ohms to about 530 ohms on the premise that the transmittance of graphene in a visible light range is not influenced, the conductivity is improved, and the stability is high. By the adoption of the wet process or the dry process for doping, the advantages of controllability in plating thickness, controllability in doping amount, high uniformity and the like are achieved; and by the adoption of an annealing process, the doping agent is more compactly combined with the graphene, the doped graphene material is unlikely to be influenced by the environment when being subsequently used.

Description

technical field [0001] The invention relates to a graphene doped material and its preparation method and application. Background technique [0002] Graphene is a new carbonaceous material with a two-dimensional honeycomb lattice structure formed by direct packing of carbon atoms. At present, the preparation methods of graphene film mainly include micromechanical glass method, liquid phase chemical method, silicon carbide epitaxial graphene film valve, chemical vapor deposition method and so on. Among them, the graphene obtained by the micromechanical exfoliation method not only has a small area, but also has a small output, and has no industrial use value. The graphene film obtained by the liquid phase chemical method, the silicon carbide epitaxial graphene film method, and the chemical vapor deposition method has a relatively large square resistance. The square resistance of the graphene film obtained by the liquid phase chemical method is about 5KΩ, the square resistance...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/04H01B13/00
Inventor 孟怡楠彭鹏金虎周振义
Owner 2D CARBON CHANGZHOU TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap