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Electrically conducting transparent film and its preparing process

A technology of transparent conductive film and zinc magnesium oxide film, which is applied to conductive layers, oxide conductors, non-metallic conductors and other directions on insulating carriers to achieve the effects of good electro-optical performance, control of doping amount and simple method.

Inactive Publication Date: 2008-07-16
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current research on the use of aluminum-zinc-magnesium-oxygen-doped and gallium-zinc-magnesium-oxygen transparent conductive films on LEDs has not attracted people's attention, and there is no research report in this area.

Method used

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  • Electrically conducting transparent film and its preparing process
  • Electrically conducting transparent film and its preparing process

Examples

Experimental program
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Effect test

Embodiment 1

[0017] Clean the glass substrate and place it on the sample holder of the reaction chamber of the DC reactive magnetron sputtering device, with the substrate deposition surface facing down, which can effectively prevent the contamination of the substrate surface by granular impurities. The vacuum degree of the reaction chamber is evacuated to 3×10 -3 Pa, using zinc-magnesium-gallium alloy as the target material, the molar percentage of gallium is 5.0%, the molar percentage of magnesium is 10%, with Ar with a purity of 99.99% and O with a purity of 99.99% 2 As the sputtering gas, the two gases are respectively controlled by the flow meter into the reaction chamber, Ar:O 2 =4:1, the pressure of the reaction chamber is 1.5Pa. Sputtering was started at a power of 100W, the substrate temperature was 300°C, and the growth time was 10min, a transparent conductive film with a thickness of about 500nm was obtained.

[0018] The prepared gallium-doped zinc-magnesium-oxygen transparent...

Embodiment 2

[0022] Clean the silicon wafer substrate and place it on the sample holder of the reaction chamber of the DC reactive magnetron sputtering device. to 3×10 -3 Pa, using zinc-magnesium-aluminum alloy as the target material, the molar percentage of aluminum is 1.0%, the molar percentage of magnesium is 1%, and the Ar with a purity of 99.99% and O with a purity of 99.99% 2 As the sputtering gas, the two gases are respectively controlled by the flow meter into the reaction chamber, Ar:O 2 =8:1, the pressure of the reaction chamber is 2.0Pa. Sputtering was started at a power of 100W, the substrate temperature was 200°C, and the growth time was 10min, a transparent conductive film with a thickness of about 500nm was obtained.

[0023] The prepared aluminum-doped zinc-magnesium-oxygen transparent conductive film has excellent electro-optical properties at room temperature. In this embodiment, the film resistivity is 5.0×10 -4 Ω·cm, Hall mobility is 7.8cm 2 / V.s, the electron carri...

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Abstract

The invention discloses a transparent conductive film which is a gallium doped or aluminium doped zinc-magnesium-oxygen film. The mol percentage of each component is as follows: the aluminium or gallium occupies 1.0 to 5.0 percent, the magnesium occupies 1 to 20.0 percent, the remaining is the zinc, and the mol number ratio of zinc-magnesium-aluminium or zinc-magnesium-gallium to O is 1:1. The DC reactive magnetic control sputtering method is adopted and the film is prepared by taking a zinc-magnesium-aluminium alloy or a zinc-magnesium-gallium alloy as a target. The method of the invention is simple, the doped quantity is easy to control, and a deposition system is simple, easy to operate and can realize the extensive metallic-membrane plating. Compared with other preparative techniques, the method is more beneficial to the realization of the industrial production. The gallium doped zinc-magnesium-oxygen or aluminium doped zinc-magnesium-oxygen transparent conductive film prepared by the invention has high transmittance, good electrooptics performance, repetitiveness and stability.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide transparent conductive film, in particular to a preparation method of an aluminum-doped zinc-magnesium oxide and a gallium-doped zinc-magnesium oxide transparent conductive film. Background technique [0002] As an important optoelectronic information material, transparent conductive oxides have been widely used in the manufacture of light-emitting devices, amorphous silicon solar cells, optical waveguides, sensors, and flat-panel liquid crystal displays. Among such materials, zinc oxide (ZnO) film is a wide bandgap (3.3eV) n-type semiconductor material, which is prone to defects and impurity doping. Compared with indium tin oxide (ITO) and SnO 2 As far as it is concerned, it has the advantages of cheap price, abundant raw materials, non-toxicity, relatively low deposition temperature and good stability in hydrogen plasma environment, and is the most promising material to replace ITO. By do...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/08H01B5/14C23C14/06C23C14/34
Inventor 叶志镇马全宝
Owner ZHEJIANG UNIV
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