Method for preparing double-layer anti-reflection film for silicon solar cell

Abstract

The invention relates to a method for preparing a double-layer anti-reflection film for a silicon solar cell and belongs to the technical field of new energy materials. According to the method, a urethane acrylate modified SiO2 film is employed, the urethane acrylate has a urethane bond, the invention is characterized in that a plurality of hydrogen bonds can be formed between polymer molecular chains, the double-layer anti-reflection film has high wear resistance, adhesion, flexibility, high peel strength and excellent low-temperature resistance performance and the excellent optical performance and weather resistance of polyacrylate, a modified second layer anti-reflection film has excellent mechanical wear resistance and flexibility, and the breaking elongation is high. According to theinvention, the silver mirror reaction is used and the annealing treatment is combined, silver nanoparticles are prepared on the surface of a substrate to be a first layer anti-reflection film, the formation of the silver nanoparticles in random distribution is a result of the combined action of metal thermodynamics and kinetics, and when the rapid annealing is carried out, a silver film system acquires sufficient kinetic energy and tends to have nanoparticle structure with a small surface area.

Description

technical field [0001] The invention relates to a method for preparing a double-layer anti-reflection film for silicon solar cells, and belongs to the technical field of new energy materials. Background technique [0002] Effective and full use of solar energy to improve the conversion efficiency of silicon solar cells is an urgent problem to be solved for silicon solar cells. Solar energy is an inexhaustible renewable energy source for human beings. It is also a clean energy source and does not cause environmental pollution. Silicon solar cells are devices that directly convert solar energy into electrical energy. The refractive index of silicon is 3.42, and it is irradiated on the silicon substrate. A large part of the sunlight is reflected, and the utilization rate of sunlight by silicon cells is not high, which reduces the conversion efficiency of the cells. The conversion efficiency has been improved, and the common method is to coat one or more layers of anti-reflecti...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention: Aiming at the problems of low hardness and poor friction resistanc