Method for preparing tungsten-doped vanadium oxide film
A technology of tungsten oxidation and thin film, which is applied in the field of preparation of tungsten-doped vanadium oxide thin film, which can solve the problems of mutual contamination of targets and achieve the effects of stable sputtering process, avoiding mutual contamination and high temperature coefficient of resistance
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[0028] Example 1:
[0029] see figure 1 , figure 2 , a method for preparing a tungsten-doped vanadium oxide film, comprising the following steps:
[0030] (1) Cleaning the substrate 1;
[0031] The substrate 1 is K9 glass with a size of 22×22 mm 2 , before depositing the vanadium oxide film 2 on it, do the following cleaning: gently wipe the surface of the substrate 1 in clean water with absorbent cotton dipped in detergent to remove the larger stains and dusts adsorbed in the process of cutting the substrate 1, and then Rinse several times with clean water to rinse the detergent; pour into ultrapure water and place it in an ultrasonic cleaning machine for ultrasonic cleaning for 15 minutes, repeat twice to reduce the impurity ions introduced during the clean water cleaning process; wash the ultrapure water After the substrate 1 is put into acetone for ultrasonic cleaning for 15 minutes to remove insoluble organic substances, etc.; after the acetone cleaning is completed,...
Example Embodiment
[0040] Basic process parameters of Example 1
[0041] background vacuum 2.0×10 -3 Pa Target surface pre-sputter cleaning time 30 minutes substrate temperature 100 ℃ Reactive gas / working gas (O -2 / Ar) ratio 0% (W), 3.2% (VO x ) reaction working pressure 1 Pa Sputtering current 0.3 A Sputtering film formation time 12 minutes / 20 seconds / 12 minutes Annealing temperature 350 ℃ Annealing time 15 min
Example Embodiment
[0042] Embodiment 2:
[0043] Compared with the first embodiment, the method for preparing the tungsten-doped vanadium oxide film described in this embodiment is that the sputtering time of the intermediate layer is 30 seconds, and the rest are the same as those of the first embodiment, such as image 3 As shown, the square resistance of the obtained film at 25 °C was 34 KΩ / □, and the temperature coefficient of resistance was -3.3 % / °C.
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