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Method for preparing tungsten-doped vanadium oxide film

A technology of tungsten oxidation and thin film, which is applied in the field of preparation of tungsten-doped vanadium oxide thin film, which can solve the problems of mutual contamination of targets and achieve the effects of stable sputtering process, avoiding mutual contamination and high temperature coefficient of resistance

Active Publication Date: 2011-11-23
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned prior art, the technical problem to be solved by the present invention is to provide a method for preparing tungsten-doped vanadium oxide film, which can overcome the traditional magnetron sputtering method to prepare tungsten-doped vanadium oxide film in the process of co-sputtering with two targets. Mutual pollution between materials, alloy target sputtering can only prepare doped films with a certain ratio, etc., and the power of the sputtering process is stable, compatible with the micro-mechanical electronic system process

Method used

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  • Method for preparing tungsten-doped vanadium oxide film

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Embodiment 1

[0029] see figure 1 , figure 2 , a method for preparing a tungsten-doped vanadium oxide film, comprising the following steps:

[0030] (1) Cleaning the substrate 1;

[0031] The substrate 1 is K9 glass with a size of 22×22 mm 2 , before depositing the vanadium oxide film 2 on it, do the following cleaning: gently wipe the surface of the substrate 1 in clear water with absorbent cotton dipped in detergent, remove the dirt and dust with larger particles adsorbed in the process of cutting the substrate 1, and then Rinse several times with clean water, rinse the detergent; pour ultrapure water and put it in an ultrasonic cleaning machine for ultrasonic cleaning for 15 minutes, repeat twice to reduce the impurity ions introduced during the cleaning process with clean water; wash with ultrapure water Put the finished substrate 1 into acetone and perform ultrasonic cleaning for 15 minutes to remove insoluble organic matter, etc.; after cleaning with acetone, pour an appropriate a...

Embodiment 1

[0040] The basic process parameter of embodiment 1

[0041] background vacuum 2.0×10 -3 Pa Target surface pre-sputter cleaning time 30 minutes Substrate temperature 100 ℃ Reactive gas / working gas (O -2 / Ar) ratio 0%(W), 3.2%(VO x ) Response working pressure 1Pa sputtering current 0.3 A Sputtering film forming time 12 minutes / 20 seconds / 12 minutes Annealing temperature 350 ℃ Annealing time 15 minutes

Embodiment 2

[0043] The method for preparing the tungsten-doped vanadium oxide thin film described in this embodiment is compared with that of embodiment one in that the sputtering time of the intermediate layer is 30 seconds, and the rest are the same as in embodiment one, such as image 3 As shown, the square resistance of the obtained film at 25 ℃ is 34 KΩ / □, and the temperature coefficient of resistance is -3.3 % / ℃.

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Abstract

The invention discloses a method for preparing a tungsten-doped vanadium oxide film, comprising the following steps of: firstly, placing the cleaned substrate into a high vacuum chamber; secondly, introducing high-purity argon gas into a vacuum chamber; respectively carrying out sputter cleaning on the surfaces of a metal vanadium target and a metal tungsten target by turning on a vanadium target sputter power supply and a tungsten target sputter power supply under the condition that the substrate is shielded by using a substrate baffle; introducing high-purity oxygen gas into the vacuum chamber; opening the substrate baffle, closing a tungsten target baffle, turning on the vanadium target sputter power supply and depositing a bottom layer vanadium oxide film; after the depositing the bottom layer vanadium oxide film, closing oxygen gas and the vanadium target baffle and turning off the vanadium target sputter power supply, turning on the tungsten target sputter power supply and opening the tungsten target baffle and depositing an intermediate layer of tungsten film; after depositing the metal tungsten film, turning off the tungsten target sputter power supply and closing the tungsten target baffle, introducing oxygen gas again, turning on the vanadium target sputter power supply and opening the vanadium target baffle and depositing the vanadium oxide film; and finally, carrying out in-situ annealing treatment on a composite film obtained through deposition.

Description

technical field [0001] The invention relates to a method for preparing a tungsten-doped vanadium oxide thin film, which belongs to the technical field of semiconductor materials. Background technique [0002] Vanadium dioxide is a functional material with phase change characteristics. With the change of temperature, vanadium dioxide undergoes a reversible phase transition from a low-temperature semiconductor phase to a high-temperature metal phase at around 68°C. At the same time, its physical properties such as resistivity and transmittance Properties also mutate. This feature makes it widely used in photoelectric switches, optical memory, smart windows and other fields. [0003] Normally, the phase transition temperature of vanadium dioxide is 68 ℃. Near the phase transition temperature, the temperature coefficient of resistance of the film is much larger than the values ​​in other temperature regions. The phase transition temperature can be effectively reduced by doping ...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/34
Inventor 吴志明蒋亚东杜明军罗振飞王涛许向东
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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