Chromium target production method

A manufacturing method and technology of chromium target material, which are applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of expensive mold, easy loss, and the purity can not meet the sputtering process, so as to improve the purity, Excellent uniformity

Active Publication Date: 2014-05-14
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0008] The problem solved by the present invention is that in the process of making the chromium target by using the existing hot pressing process, since it is necessary to design a matching mold according to the size of the chromium target, and the mold is relatively expensive and easy to wear and tear, and the use of this method The uniformity of the internal structure of the processed chromium target cannot meet the sputtering process with higher and higher requirements, and the purity cannot meet the sputtering process with higher and higher requirements for purity.

Method used

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Embodiment Construction

[0027] The inventors have found and analyzed that the existing hot pressing process is generally to pack the prepared chromium powder into the mold. The hot pressing process is one-way pressure, which will exceed the pressure bearing limit of the mold on the one hand, and on the other hand, cause the grains of the chromium powder to be stressed unevenly in all directions, and the internal structure of the formed chromium target is not uniform enough, and the grains Large size. Furthermore, with the hot pressing process, because the graphite mold is fragile, the process of filling the graphite mold with chromium powder is a small amount of multiple fillings. Each filling will pollute the chromium powder and affect the purity of the subsequent chromium target.

[0028] After creative work, the inventor proposed a new method for making chromium targets. figure 1 For the flow chart of the production method of the chromium target material provided by the present invention, please ...

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Abstract

The invention relates to a chromium target production method. The method includes: firstly, providing chromium powder; secondly, placing the chromium powder into a vacuum sheath and vacuumizing; thirdly, performing sintering on the chromium powder in the vacuum sheath by hot isostatic pressing to form a chromium target; fourthly, after sintering is finished, cooling and detaching the vacuum sheath to take the chromium target out. By the chromium target production method, a mould is avoided in use, density and uniformity of internal organizational structure of the formed chromium target are superior to those of a chromium target formed by hot pressing, and purity of the chromium target can satisfy sputtering technology with increasing requirements.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a chromium target. Background technique [0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, the electrons fly to the substrate, and the argon ions accelerate to bombard the target under the action of an electric field A large number of target atoms are sputtered out, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally the purpose of coating the substrate surface is achieved. [0003] Chromium targets are often used in vacuum sputtering processes. Early chromium targets were obtained by melting and casting. However, the density of chromium targets formed by melting and casting is difficult to control. In order to overcome this problem, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F3/16C23C14/14C23C14/34
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽宋佳
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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