Temperature sensor based on doped transition metal nitride and preparation method of temperature sensor

A temperature sensor, transition metal technology, applied in thermometers, metal material coating processes, thermometers with electrical/magnetic components that are directly sensitive to heat, etc. and other problems, to achieve the effect of flexible methods, wide application scope and reasonable selection.

Active Publication Date: 2021-06-11
SHANGHAI JIAO TONG UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the temperature sensitive range of the transition metal nitride thin-film resistance temperature sensor that has been developed so far is in the low temperature range (below 50K), and it is difficult to control the temperature range and sensitivity, and it is difficult to develop a sensor with an ideal temperature range and sensitivity. Temperature Sensor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Temperature sensor based on doped transition metal nitride and preparation method of temperature sensor
  • Temperature sensor based on doped transition metal nitride and preparation method of temperature sensor
  • Temperature sensor based on doped transition metal nitride and preparation method of temperature sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0043] refer to figure 1 As shown, it is a general technical roadmap of a preparation method based on a doped transition metal nitride temperature sensor according to a preferred embodiment of the present invention; including:

[0044] In the process of preparing the transition metal nitride thin film or after the transition metal nitride thin film is prepared, introducing cation vacancies into the transition metal nitride thin film based on the vacancy control mechanism to form a doped transition...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a temperature sensor based on doped transition metal nitride and a preparation method of the temperature sensor. The method comprises the steps that cation vacancies are introduced into a transition metal nitride film to form a doped transition metal nitride film in the preparation process of the transition metal nitride film or after the transition metal nitride film is prepared; the crystal structure of the doped transition metal nitride film is subjected to phase change by regulating and controlling the concentration of the cation vacancies, so that the ideal doped transition metal nitride film is obtained; and the target temperature sensor is prepared by adopting the doped transition metal nitride film through an MEMS processing technology. According to the preparation method of the temperature sensor based on the doped transition metal nitride, the structure and the resistance of the temperature sensitive film are regulated and controlled by regulating and controlling the vacancy concentration, finally the temperature area and the sensitivity of the temperature sensor are adjustable, and the method has guiding significance in the development of resistance-type doped transition metal nitride film temperature sensors suitable for different target temperature areas.

Description

technical field [0001] The present invention relates to the technical field of transition metal nitride thin film temperature sensors, in particular, to a temperature sensor based on doped transition metal nitride and its preparation method, mainly based on a new theoretical mechanism-vacancy control mechanism to regulate the temperature of transition metal nitride thin films sensor performance. Background technique [0002] Temperature monitoring is extremely important in aerospace, national defense technology, medical treatment, biomedicine, and daily life. Therefore, researchers have been working on the improvement of temperature sensing technology, mainly including improving the temperature range, sensitivity and test accuracy of temperature sensing. At present, temperature sensors are mainly divided into resistive temperature sensors, PN junction temperature sensors, thermocouple temperature sensors and optical temperature sensors. [0003] The resistance temperature ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C14/06C23C16/52C23C14/54G01K7/16
CPCC23C16/34C23C14/0641C23C14/0021C23C16/52C23C14/54G01K7/16
Inventor 刘景全李秀妍尤敏敏林祖德李艳杰
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products