33results about How to "Optimized annealing process" patented technology

The invention provides a method for doping anions in the cathode material of a lithium ion battery, the cathode and the battery. The method includes: configuring a mixed solution containing nickel salt, cobalt salt, and manganese salt; configuring NaOH solution; configuring ammonia solution; adding the mixed solution, NaOH solution and ammonia solution to the water, and under the protection of an inert atmosphere, the Reaction for 5h-15h under the condition of pH value 7.5-9, after washing, suction filtration and drying, the precursor is obtained; the precursor is annealed for 2h-6h in an oxygen atmosphere at 200°C-400°C to obtain an oxide; The oxide is ground and mixed with the lithium salt, and sintered in two stages under an oxygen atmosphere to obtain an anion-doped lithium-ion battery cathode material. The method of the invention can realize homogeneous and single doping of anions without other doping sources and treatment processes, has low cost, simple and easy operation, non-toxicity, and is suitable for large-scale production.

A method for preparing low-carbon low-silicon non-aluminum semi-process non-oriented electrical steel belongs to the technology field of the electrical steel with good magnetic performance. The preparation method includes the processing steps of meeting the requirements for the casting blank, such as the chemical components comprise less than or equal to 0.005% of C, 0.1%-1.0% of Si, less than or equal to 0.35% of Mn, less than or equal to 0.08% of P, less than or equal to 0.01% of S, less than or equal to 0.008% of N, less than or equal to 0.015% of O, inevitable impurities and Fe in balancing amount, according to the composition design for the hot rolling raw material; hot-charging and hot-rolling of the casting blank; acid-cleaning and cold-rolling of the steel plate after the hot-rolling; intermediate-annealing of the steel strip; cold-rolling of the critical deformation; relieving stress and annealing by users; and obtaining the semi-process non-oriented electrical steel with good magnetic performance. The method has the advantage that the final product has good magnetic performance: P15 / 50 is equal to 3.45-5.05 W / Kg, and B5000 is equal to 1.69-1.76 T. The casting blank contains no alloying elements such as Al, Sn, Sb, Cu, Cr, Ni, B, rare earth elements, etc., thus considerably reducing the production cost. The larger critical rolling reduction is adopted, the annealing technique is optimized, and the prepared finished products have better magnetic performance.

The invention provides a scheme for solving the copper surface indentation problem after silicon through hole layering and CMP. The scheme comprises the following steps: 1) a silicon through hole is formed in a silicon substrate of which the surface is provided with a stop layer, a silicon dioxide isolation layer is deposited on surfaces of the silicon through hole and the silicon substrate, and a barrier layer and a seed layer are formed on the surface of the silicon dioxide isolation layer; 2) copper is electroplated onto the surface of the seed layer to form copper for at least filling the silicon through hole; 3) the anneal process is performed on the structure, wherein the anneal process comprises the following steps: 3-1) the temperature rises from the room temperature to 80-200 DEG C with a speed of 0.5-5 DEG C / min, and is maintained for 0-60 min; 3-2) the temperature rises to 250-450 DEG C with a speed of 1-10 DEG C / min, and is maintained for 15-180min; 3-3) and the temperature is reduced to 25-100 DEG C with a speed of 1-5 DEG C / min; 4) and polishing is performed through the chemico-mechanical polishing CMP until the stop layer is exposed. According to the invention, by improving the silicon substrate baking process and the copper anneal process, the layering phenomenon in the silicon through hole process can be effectively eliminated, and the copper surface indentation problem after the CMP can be solved, the method has simple steps, the process cost will not be increased, and the scheme is suitable for being used in industry production.

The invention discloses an AlN (aluminum nitride) substrate based graphene transfer and annealing method which is implemented through transferring large-area single-layer graphene to an AlN substrate by using a wet-process transfer method; and by way of low-pressure and low-temperature atmosphere annealing, adjusting the annealing temperature and the time of annealing treatment for the AlN substrate through optimizing atmosphere conditions so as to remove a PMMA (polymethyl methacrylate) residual photoresist in the process of transferring and reduce the doping effects of residues and the substrate on graphene as far as possible, thereby obtaining a graphene material with the optimal performance. By using the graphene subjected to transferring and annealing treatment, PMMA residues attached to the surface of the graphene can be removed better, and a good adhesion relation between the graphene and the substrate is kept well, thus the doping effects of adsorbates on the surface of the graphene and the substrate are minimized.