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33results about How to "Optimized annealing process" patented technology

Preparation method of low carbon low silicon no-aluminum half-technique non oriented electrical steel

A method for preparing low-carbon low-silicon non-aluminum semi-process non-oriented electrical steel belongs to the technology field of the electrical steel with good magnetic performance. The preparation method includes the processing steps of meeting the requirements for the casting blank, such as the chemical components comprise less than or equal to 0.005% of C, 0.1%-1.0% of Si, less than or equal to 0.35% of Mn, less than or equal to 0.08% of P, less than or equal to 0.01% of S, less than or equal to 0.008% of N, less than or equal to 0.015% of O, inevitable impurities and Fe in balancing amount, according to the composition design for the hot rolling raw material; hot-charging and hot-rolling of the casting blank; acid-cleaning and cold-rolling of the steel plate after the hot-rolling; intermediate-annealing of the steel strip; cold-rolling of the critical deformation; relieving stress and annealing by users; and obtaining the semi-process non-oriented electrical steel with good magnetic performance. The method has the advantage that the final product has good magnetic performance: P15 / 50 is equal to 3.45-5.05 W / Kg, and B5000 is equal to 1.69-1.76 T. The casting blank contains no alloying elements such as Al, Sn, Sb, Cu, Cr, Ni, B, rare earth elements, etc., thus considerably reducing the production cost. The larger critical rolling reduction is adopted, the annealing technique is optimized, and the prepared finished products have better magnetic performance.
Owner:SHOUGANG CORPORATION

5182 aluminum alloy and technology method for preparing tank cover material strip through aluminum alloy

The invention discloses a 5182 aluminum alloy. The aluminum alloy is composed of Si, Fe, Cu, Mn, Mg, Cr, Zn, Ti, and remaining Al and some inevitable impurities. A preparing technology of a tank cover material strip through the 5182 aluminum alloy comprises the steps of firstly, taking of the 5182 aluminum alloy; secondly, hot rolling, cooling and obtaining a blank for cold rolling; thirdly, primary cold rolling, and obtaining a cold-rolled intermediate product, wherein the total deformation amount ranges from 66% to 78%; fourthly, air cushion furnace annealing; fifthly, secondary cold rolling, wherein the total deformation amount ranges from 71% to 76%; sixthly, stretch bending and correcting. According to the 5182 aluminum alloy and the preparing technology of the tank cover material strip through the 5182 aluminum alloy, through high alloying, the alloy strength is improved, meanwhile, the content of Fe and Si is reasonably controlled, and bank mark generation is restrained; continuous air cushion furnace annealing is adopted, through high-temperature short-time annealing, the grains are adjusted and controlled, uniformity of the strip performance is improved, and meanwhile the strip surface quality is ensured.
Owner:广西南南铝加工有限公司

Rare earth-magnesium-nickel system heterogeneous hydrogen storage alloys used for nickel-hydrogen batteries and preparing method thereof

The invention discloses rare earth-magnesium-nickel system heterogeneous hydrogen storage alloys used for nickel-hydrogen batteries and a preparing method thereof. The alloys are characterized in that: the general structure formula of the alloys is LnMgNi<x>Y<y>Z<z>, wherein the Ln is at least one element selected from rare earth elements; the Y is at least one element selected from a group comprising Co, Mn, Al, Cu, Nb, V, Fe, Zn, Ti, Cr, As, Ga, Mo, Sn, In, W, Si, B and P; the Z is at least one element selected from a group comprising Ag, Sr, Ge and Au; the a is less than 1 and not less than 0.5; the b is less than 0.5 and more than 0; the x is more than 2.5 and less than 4.5; the y is more than 0 and less than 2; the z is more than 0 and not more than 1; an AB5 phase accounts for 10-90%; an A2B7 phase accounts for 10-90%; and the ratio of other impurity phases is not more than 30%. B side elements are replaced by the Ag, the Sr, the Ge, the Au, and the like, alloy components and an annealing process are optimized, and the ratio of the AB5 phase to the A2B7 phase in the product is adjusted, thus increasing the discharge capacity of the hydrogen storage alloy, prolonging the cycle lifetime of the hydrogen storage alloy, and improving self-discharge and low-temperature properties.
Owner:SIHUI DABOWEN IND CO LTD +1

Annealing and cooling treatment system for two-stage hot wind circulation of glass ceramic tunnel crystallization kiln

The invention belongs to the technical filed of glass ceramic annealing by a sintering method, and discloses an annealing and cooling treatment system for two-stage hot wind circulation of a glass ceramic tunnel crystallization kiln. The treatment system is characterized in that the upper part and the lower part of kiln walls at two sides of a quench zone are respectively installed with a row of fast cold wind blowing openings which are communicated with fast cold wind blowing opening branch pipes, the fast cold wind blowing openings are all communicated with the output ports of second hot wind circulation pipes; the kiln walls at two sides of the slow cooling segment of a cooling zone are respectively provided with three rows of hot circulation wind blowing openings which are communicated with the hot circulation wind blowing opening branch pipes, all hot circulation wind blowing opening branch pipes are communicated with the output ports of first hot wind circulation pipes; the first hot circulation wind suction opening blowing branch pipes are all communicated with the input ports of the first hot wind circulation pipes; and the second hot circulation wind suction opening blowing branch pipes are all communicated with the input ports of the second hot wind circulation pipes. The annealing and cooling treatment system can improve product quality, and reduce deformation, burst and other defects of the products.
Owner:WUHAN UNIV OF TECH

Device and method for testing stress of infrared optical material

The invention relates to a device and method for testing the stress of an infrared optical material, belongs to the technical field of infrared optical material test, and aims at solving the problems in testing the stress of the infrared optical material through which visible light cannot be transmitted in the prior art. The device is mainly characterized by comprising an infrared light source, an infrared optical system, a signal reception system, a computer acquisition, processing and display system and a test platform. Test is carried out based on the principle of angular measurement compensation of a polarization analyzer, when an angle of 45 degree is formed between an infrared polarizer and an infrared polarization analyzer, namely a vector stress is include, elliptically polarized light generates a stroke difference, and thus, the stress of the material can be calculated. The device is characterized by simple operation and convenient test, the stress of the infrared optical material, through which visible light cannot be transmitted, can be tested, stress test can be used to guide and optimize production technology, glass of a lower stress can be produced, the imaging quality of the infrared material can be further improved, and a high-level infrared imaging system can be produced on the basis.
Owner:HUBEI NEW HUAGUANG NEW INFORMATION MATERIALS CO LTD

Hot galvanized high-strength steel plate with high surface quality and excellent corrosion resistance and manufacturing method thereof

The invention discloses a hot galvanized high-strength steel plate with high surface quality and excellent corrosion resistance and a manufacturing method thereof. The hot galvanized high-strength steel plate sequentially comprises a substrate, a pre-metallization layer and Fe-Al barrier layer and a galvanized layer from bottom to top, wherein the chemical composition of the substrate comprises the following chemical components of, in percentage by weight, 0.15 wt% to 0.25wt% of C, 1.00 wt% to 2.00 wt% of Si, 1.50 wt% to 3.00 wt% of Mn, less than or equal to 0. 015 wt% of P, less than or equalto 0.012 wt% of S, 0.03 wt% to 0.06 wt% of Al and the balance Fe and inevitable impurities, and the pre-metallization layer is a metal Ni layer. The hot galvanized high-strength steel plate is good in surface quality, uniform and complete in plating layer, and better in corrosion resistance compared with a conventional hot galvanized product; and the yield strength of the hot galvanized steel plate is 600-900 MPa, the tensile strength is 980 MPa or above, the elongation is 15-22%, the surface quality and corrosion resistance are superior to those of conventional hot galvanized high-strength steel, and the hot galvanized teel plate is suitable for automobile structural parts and outer plates with higher requirements on surface quality, corrosion resistance and formability.
Owner:BAOSHAN IRON & STEEL CO LTD

Method for relieving wafer shaking in tunnel oxide layer growth process

The invention discloses a method for relieving wafer shaking in a tunnel oxide layer growth process. The method comprises the following steps of performing the tunnel oxide layer growth process on a semiconductor substrate firstly; then performing an annealing process on the semiconductor substrate which is subjected to the tunnel oxide layer growth process; performing heating on the reaction cavity, and pumping hydrogen and oxygen to enable the air pressure in the reaction cavity to be kept unchanged; performing an annealing reaction for a certain time; stopping heating on the reaction cavityto lower the temperature in the reaction cavity; closing hydrogen and reducing the oxygen pumping amount, and meanwhile, pumping nitrogen to enable the air pressure in the reaction cavity to be keptunchanged; and after cooling is completed, completing the annealing process. By virtue of improvement of the ISSG annealing process and by performing technical analysis and understanding on wafer deformation, a defect-causing reason is found and then technical flow and parameters are changed, so that the problem of shaking of a silicon wafer in the high-temperature process can be solved; and afterthe method is adopted, the yield of the silicon wafer can be improved by 5% or above.
Owner:WUHAN XINXIN SEMICON MFG CO LTD

Aluminum foil for high-extension high-deep-drawing-power aluminum-plastic film and production process of aluminum foil

The invention discloses an aluminum foil for a high-elongation high-deep-drawing power aluminum-plastic film and a production process of the aluminum foil. The aluminum foil for the high-elongation high-deep-drawing power aluminum-plastic film comprises the following raw material alloys in percentage by weight: 0.03-0.12% of Si, 1.0-1.4% of Fe, 0.01-0.03% of Ti, 0.001-0.01% of Cu, 0.003-0.02% of Mn, less than 0.05% of other single aluminum, 0.015% of other aluminum and more than or equal to 98% of Al. The aluminum foil for the power aluminum-plastic film has the advantages of good surface quality, good stability, high tensile strength, high tensile strength, high tensile strength, high tensile strength, high tensile strength, high tensile strength, high tensile strength, high tensile strength, high tensile strength, high tensile strength, high tensile strength, high tensile strength, and the product consistency is good, the deep drawability can reach 7.5 mm or above, and the ductility is 20% or above. By systematically improving a casting, hot rolling and cold rolling production process, an aluminum-plastic film aluminum foil rolling process and an annealing process, the aluminum foil for the power aluminum-plastic film has relatively excellent cold stamping forming capacity and good quality stability and consistency, and has important significance in replacing an imported aluminum foil for the power aluminum-plastic film.
Owner:XIAMEN XIASHUN ALUMINUM FOIL

Preparation method of low carbon low silicon no-aluminum half-technique non oriented electrical steel

A method for preparing low-carbon low-silicon non-aluminum semi-process non-oriented electrical steel belongs to the technology field of the electrical steel with good magnetic performance. The preparation method includes the processing steps of meeting the requirements for the casting blank, such as the chemical components comprise less than or equal to 0.005% of C, 0.1%-1.0% of Si, less than or equal to 0.35% of Mn, less than or equal to 0.08% of P, less than or equal to 0.01% of S, less than or equal to 0.008% of N, less than or equal to 0.015% of O, inevitable impurities and Fe in balancing amount, according to the composition design for the hot rolling raw material; hot-charging and hot-rolling of the casting blank; acid-cleaning and cold-rolling of the steel plate after the hot-rolling; intermediate-annealing of the steel strip; cold-rolling of the critical deformation; relieving stress and annealing by users; and obtaining the semi-process non-oriented electrical steel with good magnetic performance. The method has the advantage that the final product has good magnetic performance: P15 / 50 is equal to 3.45-5.05 W / Kg, and B5000 is equal to 1.69-1.76 T. The casting blank contains no alloying elements such as Al, Sn, Sb, Cu, Cr, Ni, B, rare earth elements, etc., thus considerably reducing the production cost. The larger critical rolling reduction is adopted, the annealing technique is optimized, and the prepared finished products have better magnetic performance.
Owner:SHOUGANG CORPORATION

A method to solve the problem of TSV delamination and copper surface depression after cmp

The invention provides a scheme for solving the copper surface indentation problem after silicon through hole layering and CMP. The scheme comprises the following steps: 1) a silicon through hole is formed in a silicon substrate of which the surface is provided with a stop layer, a silicon dioxide isolation layer is deposited on surfaces of the silicon through hole and the silicon substrate, and a barrier layer and a seed layer are formed on the surface of the silicon dioxide isolation layer; 2) copper is electroplated onto the surface of the seed layer to form copper for at least filling the silicon through hole; 3) the anneal process is performed on the structure, wherein the anneal process comprises the following steps: 3-1) the temperature rises from the room temperature to 80-200 DEG C with a speed of 0.5-5 DEG C / min, and is maintained for 0-60 min; 3-2) the temperature rises to 250-450 DEG C with a speed of 1-10 DEG C / min, and is maintained for 15-180min; 3-3) and the temperature is reduced to 25-100 DEG C with a speed of 1-5 DEG C / min; 4) and polishing is performed through the chemico-mechanical polishing CMP until the stop layer is exposed. According to the invention, by improving the silicon substrate baking process and the copper anneal process, the layering phenomenon in the silicon through hole process can be effectively eliminated, and the copper surface indentation problem after the CMP can be solved, the method has simple steps, the process cost will not be increased, and the scheme is suitable for being used in industry production.
Owner:SEMICON MFG INT (SHANGHAI) CORP

An infrared optical material stress testing device and testing method thereof

The invention relates to a device and method for testing the stress of an infrared optical material, belongs to the technical field of infrared optical material test, and aims at solving the problems in testing the stress of the infrared optical material through which visible light cannot be transmitted in the prior art. The device is mainly characterized by comprising an infrared light source, an infrared optical system, a signal reception system, a computer acquisition, processing and display system and a test platform. Test is carried out based on the principle of angular measurement compensation of a polarization analyzer, when an angle of 45 degree is formed between an infrared polarizer and an infrared polarization analyzer, namely a vector stress is include, elliptically polarized light generates a stroke difference, and thus, the stress of the material can be calculated. The device is characterized by simple operation and convenient test, the stress of the infrared optical material, through which visible light cannot be transmitted, can be tested, stress test can be used to guide and optimize production technology, glass of a lower stress can be produced, the imaging quality of the infrared material can be further improved, and a high-level infrared imaging system can be produced on the basis.
Owner:HUBEI NEW HUAGUANG NEW INFORMATION MATERIALS CO LTD

A Method for Improving Wafer Jitter in Tunneling Oxide Growth Process

The invention discloses a method for improving wafer shaking in a tunneling oxide layer growth process, which comprises the following steps: firstly performing a tunneling oxide layer growth process on a semiconductor substrate; and then performing the tunneling oxide layer growth process on all The annealing process of the above-mentioned semiconductor substrate: heating the reaction chamber, feeding hydrogen and oxygen at the same time, so that the air pressure in the reaction chamber remains constant; annealing reaction for a certain period of time; stopping heating the reaction chamber to reduce the temperature in the reaction chamber ; Turn off the hydrogen, reduce the amount of oxygen ventilation, and feed nitrogen at the same time, so that the pressure in the reaction chamber remains constant; after cooling down, the annealing process is completed. The present invention improves the ISSG annealing process. Through the technical analysis and understanding of the wafer deformation, after finding the cause of the defect, the process flow and parameters are changed to solve the problem of silicon wafer shaking during the high-temperature process. After using this method , The yield rate of silicon wafers can be increased by more than 5%.
Owner:WUHAN XINXIN SEMICON MFG CO LTD
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