33results about How to "Optimized annealing process" patented technology

The invention provides a method for doping anions in the cathode material of a lithium ion battery, the cathode and the battery. The method includes: configuring a mixed solution containing nickel salt, cobalt salt, and manganese salt; configuring NaOH solution; configuring ammonia solution; adding the mixed solution, NaOH solution and ammonia solution to the water, and under the protection of an inert atmosphere, the Reaction for 5h-15h under the condition of pH value 7.5-9, after washing, suction filtration and drying, the precursor is obtained; the precursor is annealed for 2h-6h in an oxygen atmosphere at 200°C-400°C to obtain an oxide; The oxide is ground and mixed with the lithium salt, and sintered in two stages under an oxygen atmosphere to obtain an anion-doped lithium-ion battery cathode material. The method of the invention can realize homogeneous and single doping of anions without other doping sources and treatment processes, has low cost, simple and easy operation, non-toxicity, and is suitable for large-scale production.

The invention discloses a production technique of copper strips for solar modules, which belongs to the technical field of nonferrous metal processing and comprises the following steps: drawing-up of continuous-casting oxygen-free copper bar: using high-quality electrolytic copper as the raw material, melting at 1150+ / -10 DEG C, keeping the temperature, covering the copper liquid surface with charcoal and graphite scales to ensure the vacuum state during melting, degassing on line, deoxidizing, stirring, and drawing up the copper bar with a tractor set in an on-off vacuum way; continuous extrusion of copper strip blanks: using oxygen-free copper rods as the raw material, producing copper strip blanks by using a continuous extruder set, cooling the extruded copper strip blanks through a vacuum oxidation-resisting pipe and a water tank, drying and coiling; and rough-rolling the copper strip blanks, medium-rolling, interstage annealing, finish rolling, degreasing, washing, annealing the finished product, washing, grinding the surface to passivate, and longitudinally cutting to obtain the finished product. The product of the invention has the advantages of high purity, low oxygen content and high electrical conductivity.

A method for preparing low-carbon low-silicon non-aluminum semi-process non-oriented electrical steel belongs to the technology field of the electrical steel with good magnetic performance. The preparation method includes the processing steps of meeting the requirements for the casting blank, such as the chemical components comprise less than or equal to 0.005% of C, 0.1%-1.0% of Si, less than or equal to 0.35% of Mn, less than or equal to 0.08% of P, less than or equal to 0.01% of S, less than or equal to 0.008% of N, less than or equal to 0.015% of O, inevitable impurities and Fe in balancing amount, according to the composition design for the hot rolling raw material; hot-charging and hot-rolling of the casting blank; acid-cleaning and cold-rolling of the steel plate after the hot-rolling; intermediate-annealing of the steel strip; cold-rolling of the critical deformation; relieving stress and annealing by users; and obtaining the semi-process non-oriented electrical steel with good magnetic performance. The method has the advantage that the final product has good magnetic performance: P15 / 50 is equal to 3.45-5.05 W / Kg, and B5000 is equal to 1.69-1.76 T. The casting blank contains no alloying elements such as Al, Sn, Sb, Cu, Cr, Ni, B, rare earth elements, etc., thus considerably reducing the production cost. The larger critical rolling reduction is adopted, the annealing technique is optimized, and the prepared finished products have better magnetic performance.

The invention provides a scheme for solving the copper surface indentation problem after silicon through hole layering and CMP. The scheme comprises the following steps: 1) a silicon through hole is formed in a silicon substrate of which the surface is provided with a stop layer, a silicon dioxide isolation layer is deposited on surfaces of the silicon through hole and the silicon substrate, and a barrier layer and a seed layer are formed on the surface of the silicon dioxide isolation layer; 2) copper is electroplated onto the surface of the seed layer to form copper for at least filling the silicon through hole; 3) the anneal process is performed on the structure, wherein the anneal process comprises the following steps: 3-1) the temperature rises from the room temperature to 80-200 DEG C with a speed of 0.5-5 DEG C / min, and is maintained for 0-60 min; 3-2) the temperature rises to 250-450 DEG C with a speed of 1-10 DEG C / min, and is maintained for 15-180min; 3-3) and the temperature is reduced to 25-100 DEG C with a speed of 1-5 DEG C / min; 4) and polishing is performed through the chemico-mechanical polishing CMP until the stop layer is exposed. According to the invention, by improving the silicon substrate baking process and the copper anneal process, the layering phenomenon in the silicon through hole process can be effectively eliminated, and the copper surface indentation problem after the CMP can be solved, the method has simple steps, the process cost will not be increased, and the scheme is suitable for being used in industry production.

The invention relates to a device and method for testing the stress of an infrared optical material, belongs to the technical field of infrared optical material test, and aims at solving the problems in testing the stress of the infrared optical material through which visible light cannot be transmitted in the prior art. The device is mainly characterized by comprising an infrared light source, an infrared optical system, a signal reception system, a computer acquisition, processing and display system and a test platform. Test is carried out based on the principle of angular measurement compensation of a polarization analyzer, when an angle of 45 degree is formed between an infrared polarizer and an infrared polarization analyzer, namely a vector stress is include, elliptically polarized light generates a stroke difference, and thus, the stress of the material can be calculated. The device is characterized by simple operation and convenient test, the stress of the infrared optical material, through which visible light cannot be transmitted, can be tested, stress test can be used to guide and optimize production technology, glass of a lower stress can be produced, the imaging quality of the infrared material can be further improved, and a high-level infrared imaging system can be produced on the basis.

The invention discloses an AlN (aluminum nitride) substrate based graphene transfer and annealing method which is implemented through transferring large-area single-layer graphene to an AlN substrate by using a wet-process transfer method; and by way of low-pressure and low-temperature atmosphere annealing, adjusting the annealing temperature and the time of annealing treatment for the AlN substrate through optimizing atmosphere conditions so as to remove a PMMA (polymethyl methacrylate) residual photoresist in the process of transferring and reduce the doping effects of residues and the substrate on graphene as far as possible, thereby obtaining a graphene material with the optimal performance. By using the graphene subjected to transferring and annealing treatment, PMMA residues attached to the surface of the graphene can be removed better, and a good adhesion relation between the graphene and the substrate is kept well, thus the doping effects of adsorbates on the surface of the graphene and the substrate are minimized.

The invention discloses a method for improving wafer shaking in a tunneling oxide layer growth process, which comprises the following steps: firstly performing a tunneling oxide layer growth process on a semiconductor substrate; and then performing the tunneling oxide layer growth process on all The annealing process of the above-mentioned semiconductor substrate: heating the reaction chamber, feeding hydrogen and oxygen at the same time, so that the air pressure in the reaction chamber remains constant; annealing reaction for a certain period of time; stopping heating the reaction chamber to reduce the temperature in the reaction chamber ; Turn off the hydrogen, reduce the amount of oxygen ventilation, and feed nitrogen at the same time, so that the pressure in the reaction chamber remains constant; after cooling down, the annealing process is completed. The present invention improves the ISSG annealing process. Through the technical analysis and understanding of the wafer deformation, after finding the cause of the defect, the process flow and parameters are changed to solve the problem of silicon wafer shaking during the high-temperature process. After using this method , The yield rate of silicon wafers can be increased by more than 5%.

The invention relates to a short-flow rolling preparation process of a high-strength and high-plasticity AlN / AZ91D magnesium base composite material plate; solid solution and water quenching processesof a cast ingot before rolling are formulated; subsequent rolling and annealing processes are optimized; and a set of cold rolling process for preparing a high-strength and high-plasticity magnesiumbase composite material rolled plate is provided. The cold rolling process is high in reduction in pass, few in annealing times among passes and short in annealing time, and can realize industrial short-flow preparation. In particular, through the patent technology, namely the optimal ratio of solid solution process parameters to water quenching process parameters to rolling process parameters toannealing process parameters, the edge cracking problem in the cold rolling process is solved when the high-strength and high-plasticity cold-rolled plate is obtained, and finally, the high-quality and high-performance magnesium alloy composite material cold-rolled plate can be obtained with high efficiency.