Silicon carbide substrate annealing process and silicon carbide substrate annealing equipment

Abstract

The invention relates to the field of semiconductors, and discloses a silicon carbide substrate annealing process and silicon carbide substrate annealing equipment. The silicon carbide substrate annealing process specifically comprises the steps that double masking layers are placed on one side of a silicon carbide substrate needing to be annealed so as to shield the surface of the silicon carbide substrate, the distance D between the double masking layers and the silicon carbide substrate is more than 0 [mu] m and less than or equal to 300 [mu] m; and the silicon carbide substrate is annealed. The distance between the silicon carbide substrate and the double-layer masking layer can be adjusted, so that the purpose of improving the surface roughness of the silicon carbide substrate is achieved. Therefore, after the silicon carbide substrate is annealed, a complicated masking layer removal process is not needed, and only the double masking layers need to be directly taken away, so that the process is optimized to reduce the process cost under the condition of ensuring the same effect.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon carbide substrate annealing process and silicon carbide substrate annealing equipment. Background technique [0002] As a third-generation new semiconductor, silicon carbide (SiC) has the characteristics of wide bandgap, high critical breakdown electric field, and high thermal conductivity. Compared with traditional silicon carbide, it is used in high temperature, high pressure, high frequency, high power and other fields. base devices have great advantages. [0003] Due to the special material of SiC devices, there are many differences in process compared with traditional Si. Due to the large bond energy of SiC and the low solid solubility of impurities in SiC, the diffusion process cannot achieve n-type or p-type doping, and ion implantation is the only way to achieve SiC doping. Due to the high energy and large dose of the ion implantation process, it will d...

AI Technical Summary

Problems solved by technology

But at the same time, the high temperature will cause the Si atoms in SiC to evaporate, making the surface of SiC rough.

In order to solve this problem in the prior art, process time consumption and tape-out cost will be increased

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