75results about "Secondary electron emitting electrodes" patented technology

The present invention provides systems, devices, device components and structures for modulating the intensity and/or energies of electrons, including a beam of incident electrons. In some embodiments, for example, the present invention provides nano-structured semiconductor membrane structures capable of generating secondary electron emission. Nano-structured semiconductor membranes of this aspect of the present invention include membranes having an array of nanopillar structures capable of providing electron emission for amplification, filtering and/or detection of incident radiation, for example secondary electron emission and/or field emission. Nano-structured semiconductor membranes of the present invention are useful as converters wherein interaction of incident primary electrons and nanopillars of the nanopillar array generates secondary emission. Nano-structured semiconductor membranes of this aspect of the present invention are also useful as directed charge amplifiers wherein secondary emission from a nanopillar array provides gain functionality for increasing the intensity of radiation comprising incident electrons.

An electron emission device includes a substrate, cathode electrodes formed on the substrate, and electron emission regions electrically connected to the cathode electrodes. Gate electrodes are formed over the cathode electrodes with a first insulating layer interposed therebetween. The gate electrodes have a plurality of opening portions exposing the electron emission regions on the substrate. A focusing electrode is formed over the first insulating layer and the gate electrodes while interposing a second insulating layer. The focusing electrode has opening portions corresponding to the opening portions of the gate electrodes with a size smaller than the size of the opening portions of the gate electrodes.

An electron emitter includes an emitter section having a plate shape, a cathode electrode formed on a front surface of the emitter section, and an anode electrode formed on a back surface of the emitter section. A gap is formed between an outer peripheral portion of the cathode electrode and the front surface of the emitter section. The front surface of the emitter section contacts a lower surface of the outer peripheral portion to form a base end as a triple junction. The gap expands from the base end toward a tip end of the outer peripheral portion.

An electron multiplier for a system for detecting electromagnetic radiation or an ion flow is disclosed. The multiplier includes at least one active structure intended to receive a flow of incident electrons, and to emit in response a flow of electrons called secondary electrons. The active structure includes a substrate on which is positioned a thin nanodiamond layer formed from diamond particles the average size of which is less than or equal to about 100 nm.

An electronic pulse generation device has an emitter section having a plate shape, a cathode electrode formed on a front surface of the emitter section, an anode electrode formed on a back surface of the emitter section, and a pulse generation source which applies a drive voltage between the cathode electrode and the anode electrode through a resistor. The anode electrode is connected to GND through another resistor. A collector electrode is provided above the cathode electrode, and the collector electrode is coated with a phosphor layer. A bias voltage is applied to the collector electrode through another resistor.

An electron emitter has an emitter section formed on a substrate, and a cathode electrode and an anode electrode formed on a same surface of the emitter section. A slit is formed between the cathode electrode and the anode electrode. A drive voltage from a pulse generation source is applied between the anode electrode and the cathode electrode. The anode electrode is connected to the ground. A charging film is formed on a surface of the anode electrode.

The invention discloses Y2O3-Lu2O3 system composite rare earth-molybdenum electron emission material and a preparation method thereof, and belongs to the technical field of rare earth refractory metal cathode materials. The prior cathode material cannot satisfy the higher electron emission requirements. The Y2O3-Lu2O3 system composite rare earth-molybdenum electron emission material and the preparation method thereof are characterized in that yttrium and lutetium which are rare earth elements are used as additional elements, and are mixed into metal molybdenum in any proportion for the preparation of the cathode material. The material is obtained by mixing Lu2O3 and Y2O3 which are two rare earth oxides in any proportion, the mixed rare earth oxides account for 20 percent wt of the gross weight of the emission material, and others are molybdenum. The Y2O3-Lu2O3 system composite rare earth-molybdenum electron emission material can be utilized to make rare earth-molybdenum secondary electron emission material, the secondary electron emission coefficient thereof is higher a lanthanum-containing cathode, and optimum activation temperature is less than the lanthanum-containing cathode and a cerium-containing cathode.

A plasma display panel and a drive method therefor, which can enhance a representation capability when displaying a dark image. The plasma display panel includes fluorophor layers containing magnesium oxide. The drive method includes a reset step to initialize all the pixel cells into states of one of a light-up mode and a light-off mode, and an address step in which the pixel cells are caused to perform address discharges selectively in accordance with pixel data, which are successively executed in each of a head subfield and a second subfield within a one-field display period. In reset step, a voltage that sets row electrodes on one side, in the row electrode pairs as an anode and sets the column electrodes set as a cathode is applied between the row electrodes on the one side and the column electrodes.

A semiconductor source of emission electrons which uses a target of a wide bandgap semiconductor having a target thickness measured from an illumination surface to an emission surface. The semiconductor source is equipped with an arrangement for producing and directing a beam of seed electrons at the illumination surface and a mechanism for controlling the energy of the seed electrons such that the energy of the seed electrons is sufficient to generate electron-hole pairs in the target. A fraction of these electron-hole pairs supply the emission electrons. Furthermore, the target thickness and the energy of the seed electrons are optimized such that the emission electrons at the emission surface are substantially thermalized. The emission of electrons is further facilitated by generating negative electron affinity at the emission surface. The source of the invention can take advantage of diamond, AlN, BN, Ga_1-yAl_yN and (AlN)_x(SiC)_1-x, wherein 0≦y≦1 and 0.2≦x≦1 and other wide bandgap semiconductors.

Primary electrons impinge upon an emitter section of an electron emitter for causing emission of the secondary electrons. The secondary electrons are outputted from the electron emitter. The secondary electrons emitted from the emitter section are accelerated in an electric field applied to the emitter section for generating an electron beam. The electron emitter has the emitter section having a plate shape, a cathode electrode formed on a front surface of the emitter section, an anode electrode formed on a back surface of the emitter section. A drive voltage from a pulse generation source is applied between the cathode electrode and the anode electrode through a resistor. The anode electrode is connected to GND. A collector electrode is provided above the cathode electrode. A bias voltage is applied to the collector electrode.

An electron emitter includes an emitter layer composed of a dielectric material, a first electrode disposed onto a first surface of the emitter layer, and a second electrode disposed onto the first surface, inside, or onto a second surface opposite to the first surface of the emitter layer. A microscopic recess is disposed on a surface of the first electrode. Alternatively, an opening is disposed in the first electrode, the opening exposing the first surface of the emitter layer to the outside of the electron emitter, and a plurality of microscopic protrusions are disposed along the thickness direction of the first electrode at an inner edge of the opening.

A light source has a transparent substrate, a fixed substrate disposed in facing relation to the transparent substrate, at least one electron emitter disposed on the fixed substrate, a phosphor layer disposed on a surface of the transparent substrate which confronts the fixed substrate, and a trajectory deflector for deflecting the trajectory of a pulsed electron flow intermittently emitted from the electron emitter. The pulsed electron flow is deflected by the trajectory deflector to two-dimensionally scan a position of the phosphor layer which is irradiated with the pulsed electron flow for thereby spreading the pulsed electron flow.

An electron emitter has an anode electrode formed on a substrate, an electric field receiving member formed on the substrate to cover the anode electrode, and a cathode electrode formed on the electric field receiving member. The cathode electrode is supplied with a drive signal from a pulse generation source, and the anode electrode is connected to an anode potential generation source (GND in this example). A collector electrode is provided above the cathode electrode, and the collector electrode is coated with a fluorescent layer. The collector electrode is connected to a collector potential generation source (Vc in this example) through a resistor.

The invention discloses Y2O3-Gd2O3 system composite rare earth-molybdenum electron emission material and a preparation method thereof, and belongs to the technical field of secondary electron emission materials. The prior secondary electron emission material cannot satisfy the higher electron emission requirements. The Y2O3-Gd2O3 system composite rare earth-molybdenum electron emission material and the preparation method thereof are characterized in that yttrium and gadolinium which are rare earth elements are used as additional elements, and are mixed into metal molybdenum in different proportions for the preparation of the cathode material. The Y2O3-Gd2O3 system composite rare earth-molybdenum electron emission material is obtained by mixing Gd2O3 and Y2O3 which are two rare earth oxides in any proportion, the mixed rare earth oxides account for 30 percent wt of the gross weight of the emission material, and others are molybdenum. The Y2O3-Gd2O3 system composite rare earth-molybdenum electron emission material can be utilized to make rare earth-molybdenum secondary electron emission material, the secondary electron emission coefficient thereof is higher a lanthanum-containing cathode, optimum activation temperature is less than the lanthanum-containing cathode, and the emission performance is stable in a larger voltage range and is superior to a cerium-containing cathode.

The invention relates to an electron multiplying structure for use in a vacuum tube using electron multiplying and to an vacuum tube using electron multiplying provided with such an electron multiplying structure. According to the invention an electron multiplying structure is proposed for use in a vacuum tube using electron multiplying, the electron multiplying structure comprising an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, wherein the electron multiplying structure at least is composed of a semi-conductor material layer adjacent the detection windows.