7results about "Secondary electron emitting electrodes" patented technology

A metasurface element includes a support body and a metasurface formed on a surface of the support body. The metasurface includes a metal pattern that is disposed to emit an electron in response to incidence of an electromagnetic wave, and a metal layer that contains an alkali metal and is formed on the metal pattern. The metal layer extends beyond the metal pattern to reach a region on the surface of the support body, the region being not formed with the metal pattern.

This invention discloses a horizontally structured nano-air channel transistor based on multilayer thin films, belonging to the field of transistor technology. It includes an insulating substrate, a multilayer thin film cathode and anode disposed on its front side, with a nano-air channel formed between the cathode and anode. The multilayer thin film cathode is composed of alternating layers of conductive and insulating thin films. The anode is composed of a conductive material, or is composed of alternating layers of conductive and insulating thin films. Conductive sidewalls are also provided on one side of the multilayer thin film cathode and anode for electrical connection between the conductive thin film layers. This invention achieves a large field enhancement factor through the sharp edge structure of the multilayer thin films and effectively increases the field emission current of the transistor by utilizing the tandem emission of the multilayer thin films. Simultaneously, because vertical etching or corrosion processes can easily achieve 90-degree sidewalls, the isomorphism of the emission structure of each layer in the multilayer thin film is maintained, enabling simultaneous electron emission from the multilayer thin films in series to maintain a stable emission current.

The application relates to the technical field of micro-light imaging, and discloses an image intensifier with a micro-channel plate, which comprises, from top to bottom, a photocathode, a micro-channel plate and a fluorescent screen. The micro-channel plate comprises a lead silicate glass substrate with hundreds of thousands of electron multiplication channels, an input electrode located at the incident end of the channels, an output electrode located at the outgoing end of the channels and a channel inner wall forming the inner surface of the channels. The surface layer of the input electrode and the channel inner wall is a material layer, and the surface layer of the output electrode is a NiCr material layer. The input electrode and the channel inner wall adopt a material layer with a high secondary electron emission coefficient to ensure high gain; the output electrode adopts a NiCr material layer with a low secondary electron emission coefficient to absorb large-angle electrons and collimate the output electron beam, thereby improving the spatial resolution, effectively solving the mutual restriction relationship between the spatial resolution and the gain in the existing micro-channel plate and realizing high-brightness and high-definition imaging.

The present disclosure provides a device for generating x-rays, comprising: an anode configured to convert an electron beam to an x-ray beam; a diamond substrate in thermal contact with the anode and configured to absorb heat generated in the anode; and a cooling system configured to cool the diamond substrate to a temperature below -60 degrees Celsius. The device enables efficient x-ray generation while managing heat dissipation through the use of a cooled diamond substrate with high thermal conductivity.

An optical device includes a photocathode and an optic configured to direct a light beam toward the photocathode, the light beam forming a submicron spot on the photocathode. The photocathode has air resistance, is made of a material selected from the group consisting of Na2O, K2O, and Rb2O, and is configured to convert the light beam into an electron beam.

The invention discloses a high-gain copper beryllium alloy secondary electron emitter and a preparation method thereof, and relates to the technical field of material preparation, and the preparation method comprises the following steps: carrying out pulse electrolytic polishing surface pretreatment on a punch-formed copper beryllium alloy base material, then putting the copper beryllium alloy base material subjected to surface pretreatment into a tubular furnace, and heating the tubular furnace to obtain a copper beryllium alloy secondary electron emitter; after argon and hydrogen mixed gas is introduced for gas washing, vacuumizing is conducted, then the tubular furnace is heated, low-oxygen-pressure thermal activation treatment is conducted on the copper-beryllium alloy base material in two steps, a beryllium oxide active layer with the high secondary electron emission coefficient is formed on the surface, and the high-gain copper-beryllium alloy secondary electron emitter is obtained. The beryllium oxide active layer is uniform, compact and low in roughness, the copper beryllium alloy secondary emitter is high in secondary electron emission coefficient and stable in performance, and the problem that a conventional copper beryllium alloy secondary electron emitter is insufficient and unstable in performance is effectively solved.

The application discloses a high-entropy alloy reinforced impregnated cathode and a preparation method thereof, and belongs to the field of refractory high-entropy alloys. The specific steps are as follows: 1) putting Os, Ir, Re, W and Ru raw material powders into a crucible and annealing in hydrogen; weighing and mixing the raw material powders; 2) uniformly mixing by using dry ball milling; 3) powder compression molding: putting the ball-milled powder into a mold and compressing, and keeping pressure for 20s-43s; 4) putting the compressed green body into a hydrogen furnace for sintering, introducing hydrogen, firstly, heating to 850 DEG C for 30min, then heating to 1380-1620 DEG C at a heating rate of 8.5 DEG C / min, and keeping temperature for 15-55min; and impregnating active salt at 1660-1690 DEG C. The impregnated cathode has a cathode matrix with a simple Hcp solid solution as a main structure, and has the advantages of high melting point, large impregnation amount, high temperature stability, high current emission density and the like.