3results about "Secondary electron emitting electrodes" patented technology

This invention discloses a horizontally structured nano-air channel transistor based on multilayer thin films, belonging to the field of transistor technology. It includes an insulating substrate, a multilayer thin film cathode and anode disposed on its front side, with a nano-air channel formed between the cathode and anode. The multilayer thin film cathode is composed of alternating layers of conductive and insulating thin films. The anode is composed of a conductive material, or is composed of alternating layers of conductive and insulating thin films. Conductive sidewalls are also provided on one side of the multilayer thin film cathode and anode for electrical connection between the conductive thin film layers. This invention achieves a large field enhancement factor through the sharp edge structure of the multilayer thin films and effectively increases the field emission current of the transistor by utilizing the tandem emission of the multilayer thin films. Simultaneously, because vertical etching or corrosion processes can easily achieve 90-degree sidewalls, the isomorphism of the emission structure of each layer in the multilayer thin film is maintained, enabling simultaneous electron emission from the multilayer thin films in series to maintain a stable emission current.

The application relates to the technical field of micro-light imaging, and discloses an image intensifier with a micro-channel plate, which comprises, from top to bottom, a photocathode, a micro-channel plate and a fluorescent screen. The micro-channel plate comprises a lead silicate glass substrate with hundreds of thousands of electron multiplication channels, an input electrode located at the incident end of the channels, an output electrode located at the outgoing end of the channels and a channel inner wall forming the inner surface of the channels. The surface layer of the input electrode and the channel inner wall is a material layer, and the surface layer of the output electrode is a NiCr material layer. The input electrode and the channel inner wall adopt a material layer with a high secondary electron emission coefficient to ensure high gain; the output electrode adopts a NiCr material layer with a low secondary electron emission coefficient to absorb large-angle electrons and collimate the output electron beam, thereby improving the spatial resolution, effectively solving the mutual restriction relationship between the spatial resolution and the gain in the existing micro-channel plate and realizing high-brightness and high-definition imaging.

The invention discloses a high-gain copper beryllium alloy secondary electron emitter and a preparation method thereof, and relates to the technical field of material preparation, and the preparation method comprises the following steps: carrying out pulse electrolytic polishing surface pretreatment on a punch-formed copper beryllium alloy base material, then putting the copper beryllium alloy base material subjected to surface pretreatment into a tubular furnace, and heating the tubular furnace to obtain a copper beryllium alloy secondary electron emitter; after argon and hydrogen mixed gas is introduced for gas washing, vacuumizing is conducted, then the tubular furnace is heated, low-oxygen-pressure thermal activation treatment is conducted on the copper-beryllium alloy base material in two steps, a beryllium oxide active layer with the high secondary electron emission coefficient is formed on the surface, and the high-gain copper-beryllium alloy secondary electron emitter is obtained. The beryllium oxide active layer is uniform, compact and low in roughness, the copper beryllium alloy secondary emitter is high in secondary electron emission coefficient and stable in performance, and the problem that a conventional copper beryllium alloy secondary electron emitter is insufficient and unstable in performance is effectively solved.