Determination method for secondary electron emission coefficient of metal surface of microwave component

A technology of secondary electron emission and metal surface, which is applied to high-power microwave components and determines the secondary electron emission coefficient of the metal surface of microwave components, which can solve the problems of large error in calculation results and lack of processing.

Active Publication Date: 2013-07-10
XIAN INSTITUE OF SPACE RADIO TECH
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Problems solved by technology

[0004] 1) There is no means to deal with the irregular rough surface of the actual metal, and the secondary electron emission coefficient is only calculated for the metal surface with regular rectangular grooves and triangular grooves on the surface
[0005] 2) I

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  • Determination method for secondary electron emission coefficient of metal surface of microwave component
  • Determination method for secondary electron emission coefficient of metal surface of microwave component
  • Determination method for secondary electron emission coefficient of metal surface of microwave component

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Embodiment Construction

[0049] Specific embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0050] The invention provides a method for determining the secondary electron emission coefficient of the metal surface of the microwave component, such as figure 1 As shown, the steps are as follows:

[0051] (1) Set the initial energy of the incident electron as E p , the incident angle is θ p ; The initial energy E of the incident electron p The range of values ​​is (0eV, 2500eV), the incident angle θ p The range is (0, 90°).

[0052] (2) Change the initial energy E of the incident electron p , count the number of emitted electrons under different incident energies, and obtain the secondary electron emission coefficient δ of the metal surface flat . Specifically:

[0053] There are N initial electrons with initial energy E p , N is a positive integer, every time each incident electron collides with a smooth metal surface, a...

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Abstract

The invention provides a determination method for a secondary electron emission coefficient of the metal surface of a microwave component. The method comprises the following steps: (1) setting an initial state of an incident electron; (2) changing initial energy of the incident electron and counting the number of outgoing electrons under the conditions of different amounts of incident energy so as to obtain a secondary electron emission coefficient of a metal surface; (3) acquiring distribution density and a depth-to-width ratio of a trap structure of the metal surface based on micro-morphology of the metal surface; (4) establishing boundary conditions based on the depth-to-width ratio and an absolute depth, carrying out trajectory tracking on outgoing electrons after collision each time, determining secondary electrons which undergo collision again, are absorbed by a metal wall or escape from a trap opening and go out as the trap structure and finally carrying out counting to obtain a secondary electron emission coefficient on the surface of a trap structure opening; and (5) determining a secondary electron emission coefficient of any actual metal surface based on the distribution density of the trap structure and the secondary electron emission coefficient of the smooth metal surface.

Description

technical field [0001] The invention relates to a method for determining the secondary electron emission coefficient of a metal surface of a microwave component, which is mainly aimed at a high-power microwave component carried by a space vehicle and belongs to the technical field of space special effects. Background technique [0002] One of the necessary conditions for the establishment of micro-discharge is that the secondary electron emission coefficient of the material is greater than 1, and reducing the secondary electron emission coefficient can effectively suppress the micro-discharge effect. The roughness of the metal surface of the microwave component is increased by the surface treatment method, and the rough surface has a "trap" effect on the generation of secondary electrons under certain conditions. The initial electrons are incident on the metal surface and collide to produce secondary electrons. Since the most probable energy of the secondary electrons is abo...

Claims

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Application Information

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IPC IPC(8): G01N23/22
Inventor 王瑞崔万照张娜叶鸣贺永宁
Owner XIAN INSTITUE OF SPACE RADIO TECH
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