3 results about "Electron drift" patented technology

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

This invention proposes a gallium nitride-based semiconductor laser with a gradient peak rate electric field waveguide layer. The fitting curves of the In ion intensity distribution or In atom concentration distribution, the fitting curve of the peak rate electric field distribution, and the fitting curve of the saturated electron drift velocity distribution obtained from SIMS testing of the upper and lower waveguide layers with the gradient peak rate electric field all satisfy any one of the Logistic function, Logistic 5 function, or Nelder function, forming a high electric field barrier. Electrons transporting from the active region to the p-type layer must overcome this barrier height, suppressing electron leakage from the active region to the p-type layer. The low electric field matches the low-velocity transport of holes, avoiding enhanced hole scattering. High injection efficiency allows carriers in the active region to quickly reach the stimulated emission threshold. The saturated electron drift velocity gradually decreases from high to low, and the low saturated electron drift velocity on the active region side avoids punch-through leakage caused by high-speed electrons rushing through the active region.

This invention discloses a method, apparatus, and dielectric for extracting parameters from a GaN HEMT source-drain channel region resistance model, belonging to the field of power device technology. The method includes: dividing the GaN HEMT source-drain channel region resistance model parameters into blocks to obtain the fitting parameters to be extracted; wherein the fitting parameters include c1, c2, λ, and γ; and calculating the source-drain channel region resistance R under low bias conditions based on the known structural parameters of the device. D0,S0 Static I-V testing was performed on GaN HEMTs, and the results were obtained through static I-V testing. DS -V DS The fitting parameters c1 and c2 are obtained by extracting the output characteristic curves; the electron drift velocity v in the source-drain channel region is used to obtain the fitting parameters c1 and c2. acc -V DS The curves are extracted to obtain the fitting parameters λ and γ. This invention can quickly and accurately extract the relevant fitting parameters of the GaN HEMT source-drain channel region resistance model, improving the efficiency of GaN HEMT source-drain channel region resistance modeling.