37 results about "Electron drift" patented technology

The invention provides a construction method and system of a non-reciprocal emission / absorption device with a Fizeau dragging effect. The construction method comprises the following steps: selecting a metal substrate, a dielectric grating and a two-dimensional material; applying a bias voltage in the x-axis direction to the two-dimensional material layer to generate a Fizeau dragging effect; the bias voltage is adjusted under TM polarization, so that the electron drift speed is close to the Fermi speed, asymmetric surface plasmon resonance is excited, and unequal emissivity and absorptivity are achieved; an adjustable singular point is generated in an angle-frequency space by adjusting the filling ratio of the grating, so that the numbers of spectral formants of emissivity and absorptivity near the singular point are different, and the wavelength integral nonreciprocity intensity is improved. The non-reciprocal heat radiation characteristic can be realized through voltage regulation and control without an external magnetic field.

A gain-free microchannel plate two-dimensional framing imaging system, comprising a vacuum drift tube, combined-type long and short magnetic lenses, a gain-free electron beam time amplifier, a gated microchannel plate detector, and a pulse generator, wherein the combined-type long and short magnetic lenses surround the outer side of the vacuum drift tube, the gain-free electron beam time amplifier is located at the incident end of the vacuum drift tube, the gated microchannel plate detector is located at the emergent end of the vacuum drift tube, and the area in the vacuum drift tube between the incident end thereof and the emergent end thereof is an electron drift region.

Disclosed are a power semiconductor device and a preparation method thereof, which belongs to the field of power semiconductor devices. By introducing a punch-through triode structure for electron extraction in a drift region, the frontside hole injection efficiency is reduced, and hole currents from emitters are converted into electron drift currents without significantly increasing on-state voltage drop. In addition, by changing the density and topography of a frontside trench, the adjustment of punch-through area and position is achieved, which in turn changes the electron extraction and frontside hole injection efficiency. The disclosed method increases the design flexibility and design dimension of the device.

The present invention belongs to the technical field of metal smelting, and discloses an electron beam anti-drift device and an electron beam smelting furnace. The electron beam anti-drift device includes a shell and a magnetic part; the shell is used to be sleeved on the outside of the crucible, and the magnetic part is arranged on the shell to constrain the electron beam emitted toward the inside of the crucible; a cooling chamber is arranged inside the shell to contain a coolant. The Lorentz force of the magnetic field generated by the magnetic part on the electrons can reduce the degree of electron drift, and achieve the convergence and constraint of the electron beam. The setting of the cooling chamber can prevent the magnetic part from overheating or high-temperature demagnetization, which helps to improve the stability of the device operation. The electron beam smelting furnace of the present invention can improve the electron beam convergence and smelting effect, reduce the influence of the magnetic field between the electron beams, make the electron beam trajectory more stable and controllable, greatly reduce the difficulty of operation during smelting in an electron beam smelting furnace with dual electron beams or more, and effectively reduce the use and maintenance costs of the equipment.

The present invention relates to a laser with a strain-modulated upper waveguide layer and a growth method thereof. The semiconductor laser comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein the upper waveguide layer is a strain-modulated upper waveguide layer; the semiconductor laser forms a strain-modulated upper waveguide layer by regulating the peak electron drift rate distribution, deformation potential distribution, bulk elastic modulus distribution, and polarization optical phonon energy distribution of the upper waveguide layer, thereby suppressing spontaneous polarization and piezoelectric polarization effects, improving crystal quality, reducing non-radiative recombination, suppressing QCSE effects, reducing energy band tilt, and increasing the spatial overlap probability of electron-hole wave functions, thereby improving radiative recombination efficiency and reducing light absorption loss.

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.

The utility model relates to a semiconductor laser element with a gradient polarization layer, which sequentially comprises a substrate, a lower coating layer, a lower wave layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer from bottom to top, and is characterized in that the gradient polarization layer is arranged between the substrate and the lower coating layer. The piezoelectric polarization coefficient distribution, the spontaneous polarization coefficient distribution, the Philips ionization degree distribution, the elastic coefficient distribution, the covalent bond energy distribution, the polarization optical phonon energy distribution, the transverse sound velocity distribution, the saturated electron drift rate distribution and the like of the gradient polarization layer have special curve distribution; therefore, the semiconductor laser element has the advantages of reducing the polarization effect, reducing the hole migration barrier, reducing the electron leakage and the like.

The gallium nitride semiconductor purple light laser comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper coating layer which are sequentially arranged from bottom to top. According to the gallium nitride semiconductor purple light laser, the distribution characteristic of the drift rate of saturated electrons in the lower waveguide layer of the gallium nitride semiconductor purple light laser is specifically designed, so that the lower waveguide layer forms a carrier pinning lower waveguide layer, redundant carriers are limited in an active region under the condition of large injection, electron leakage current is eliminated, the carrier transport and injection efficiency is improved, and the quantum efficiency is improved. The bipolar conductance effect and the junction voltage saturation at the threshold are inhibited, and the series resistance and voltage are reduced; meanwhile, an acceleration hole and an electronic quasi-Fermi level are pinned, and the rate of stimulated radiation exceeding spontaneous radiation is accelerated, so that carriers are completely converted into photons to be output, symmetry breaking corresponding to a far-equilibrium state is inhibited, a deep level trap of a lower waveguide layer is reduced, and the capture effect of a depletion region is enhanced. And the problems of junction voltage jump and series resistor sinking are solved.

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

The application provides a gallium oxide device and a preparation method thereof, and the device comprises a Schottky device, an insulating high-thermal-conductivity layer and a heat dissipation substrate; the Schottky device comprises a substrate, an epitaxial layer, a dielectric layer, a Schottky contact metal layer, an ohmic contact metal layer and an electrode pin; the insulating high-thermal-conductivity layer is arranged on both sides of the electrode pin; and the heat dissipation substrate is connected with the electrode pin in the Schottky device through a soldering pad. The gallium oxide device provided by the application is covered with the insulating high-thermal-conductivity layer material on the electrode and the functional area of the device, and the device is connected on the packaging heat dissipation substrate in an inverted manner, and the external circuit is realized through the heat dissipation substrate. The heat dissipation capacity of the device is improved, the influence of temperature on the electron drift is reduced, the heat generated by the gallium oxide device is timely dissipated, the temperature of the device itself is reduced, and the voltage resistance performance, reliability and working stability of the gallium oxide device are improved.

The present invention provides a semiconductor structure comprising: a silicon substrate in [100] orientation; a scandium oxide layer over the substrate, in [111] orientation; and a scandium-rare earth-oxide layer over the scandium oxide layer. The scandium-rare earth-oxide layer can have a graded composition to transition lattice constant to match to a subsequent layer, such as an indium nitride layer having very high electron drift velocity. InN over Si (100) offers transistors, photonics and passive electronics that operate in the terahertz frequency range.

This invention discloses a method for measuring the electron drift velocity of a group III nitride heterostructure in multiple physical environments, belonging to the field of semiconductor technology. The method first forms an H-shaped channel in the group III nitride heterostructure and symmetrically prepares rectangular test electrodes on both sides of the channel to obtain the sample to be tested. Then, the sample is placed in one or more physical environments and connected to a test circuit. A voltage is applied to the test electrodes, and the current flowing through the H-shaped channel is measured to obtain the electron drift velocity v. The variation of the electron drift velocity v with the electric field E under external physical environments such as temperature field, light field, magnetic field, and different gas atmospheres is obtained. Measuring the 2DEG electron drift velocity in a group III nitride heterostructure under different physical fields is of great significance for comprehensively evaluating and optimizing the performance of group III nitride devices, providing guidance for device design and optimization.

The present invention discloses a method, apparatus, terminal device, and storage medium for evaluating the dielectric strength of a binary gas mixture. The method comprises: obtaining the gas content, electron drift velocity, and average electron energy of each pure gas in the binary gas mixture under different reduced electric fields; solving the net effective ionization rate function of the mixed gas to obtain the common average electron energy corresponding to when the net effective ionization rate crosses zero; determining the electron drift velocity and corresponding reduced electric field strength of each pure gas under the common average electron energy; substituting the gas content, electron drift velocity, and corresponding reduced electric field strength of each pure gas into a preset reduced electric field strength function expression to determine the corresponding critical reduced field strength; and evaluating the dielectric strength of the mixed gas based on the critical reduced field strength. By implementing the present invention, the dielectric strength of a binary gas mixture can be evaluated.

The invention discloses a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device integrated with a punch-through NPN (Negative-Positive-Negative) diode, which is characterized in that an NPN punch-through JFET (Junction Field Effect Transistor) region is used as a reverse through-flow path, and on the premise of ensuring the reliability of a grid electrode of the device and relatively low specific on-resistance, the conduction voltage drop of reverse through-flow is further reduced, the conduction of a body diode is inhibited, and the switching loss is reduced by reducing reverse recovery charges. Compared with a traditional JFET structure, through a punch-through type breakdown electric field, the electron drift rate is increased, meanwhile, the reverse current path is increased, and the reverse flow capacity is improved. According to the invention, the bipolar degradation of the device can be effectively prevented, the reverse recovery charge is obviously reduced, the reverse through-current capability is enhanced, the switching speed is greatly improved, and the switching loss is reduced.

The invention relates to an electric imaging system, in particular to a large-dynamic-range time amplification framing imaging system, and solves the technical problems that an existing traveling wave gating framing image converter tube is limited by the electron transit time extension effect of a micro-channel plate, the time resolution can only reach 60 ps at most, and the laser driving fusion diagnosis requirement cannot be met. The system comprises a vacuum container, an optical input window, a traveling wave gating framing tube, a photoelectric cathode, a grid mesh, a coil and a power supply module, the first coil, the second coil and the third coil form an electron emission magnetic field, an electron drift magnetic field and an electron receiving magnetic field after being electrified, the magnetic field intensity of the electron emission magnetic field and the magnetic field intensity of the electron receiving magnetic field are both larger than the magnetic field intensity of the electron drift magnetic field, and the electron emission magnetic field is used for conducting spatial position constraint on the photoelectron group emission process. The electron drift magnetic field is used for carrying out spatial position constraint on the photoelectron group drift process, and the electron receiving magnetic field is used for carrying out spatial position constraint on the photoelectron group imaging process.

The invention provides a single-photon avalanche diode and a preparation method thereof, and a photoelectric detector, and the single-photon avalanche diode comprises an N-type substrate layer which is provided with a light incident side and a backlight side; the device structure layer is embedded in the N-type substrate layer; the device structure layer comprises an N-type doped avalanche multiplication region and a P-type heavily-doped light absorption region which are sequentially arranged in the direction from the light incident side to the backlight side, and the N-type doped avalanche multiplication region surrounds the P-type heavily-doped light absorption region. Holes of the P-type heavily-doped light absorption region can be quickly relaxed by dielectric, and after electrons drifting to the N-type doped avalanche multiplication region generate electrons and holes after an avalanche multiplication effect occurs, the generated holes can be quickly relaxed by dielectric after drifting back to the P-type heavily-doped light absorption region. And the problem that the response rate of the device is limited due to the fact that the hole mobility of the semiconductor material is lower than the electron mobility can be solved.

The present invention proposes a gallium nitride-based semiconductor laser and a preparation method, comprising a single crystal substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer arranged in sequence from bottom to top, and a p-type contact layer is arranged above the upper confinement layer, and the p-type contact layer has peak rate electric field distribution characteristics, transverse sound velocity distribution characteristics and saturated electron drift rate distribution characteristics. The present invention arranges a p-type contact layer having peak rate electric field distribution characteristics, transverse sound velocity distribution characteristics and saturated electron drift rate distribution characteristics above the upper confinement layer of the gallium nitride-based semiconductor laser, which can improve the hole mobility and hole transport efficiency, thereby improving the hole expansion capacity of the p-type contact layer, and then improving the ESD of the laser and reducing the voltage. At the same time, the Joule heat loss generated by the p-type contact layer of the laser is reduced, the heat accumulation and temperature rise of the laser are reduced, the thermal red shift of the laser is improved, and the life and reliability of the laser are improved.

The invention discloses an embedded anode silicon drift detector and a preparation method thereof, relates to the technical field of semiconductor devices, and provides a technical scheme capable of shortening an electron drift distance, reducing surface recombination and more effectively collecting electrons. The embedded anode silicon drift detector comprises a substrate, an anode electrode located on the anode surface of the substrate and a gradient doping region. The anode electrode is embedded in the substrate, and the gradient doping region is located in the substrate and surrounds the anode electrode. The preparation method of the embedded anode silicon drift detector comprises the following steps: providing a substrate; forming an anode electrode window on the anode surface of the substrate; doping the substrate along the anode electrode window to obtain a gradient doped region; and preparing an anode electrode in the electrode window.

The utility model relates to a semiconductor light-emitting chip. The semiconductor light-emitting chip comprises a substrate, a first conductive type semiconductor, an active layer, an electron blocking layer and a second conductive type semiconductor which are sequentially connected from bottom to top. According to the semiconductor light-emitting chip, the lattice constant gradient, the separation energy gradient and the volume elastic modulus gradient of the semiconductor light-emitting chip are regulated and controlled, so that the problem of photoelectric conversion efficiency attenuation of a light-emitting element under a large-current effect is solved; the WPE photoelectric conversion efficiency of a quantum well is improved by regulating and controlling the heavy hole effective mass gradient, the valence band effective state density gradient, the saturated electron drift rate gradient and the longitudinal sound velocity gradient of the semiconductor light-emitting chip and the electron and hole wave function distribution of the quantum well, and the WPE photoelectric conversion efficiency is improved while the attenuation rate of the photoelectric conversion efficiency is reduced. Therefore, the luminous efficiency of the semiconductor chip is enhanced.

The invention discloses a light-emitting diode epitaxial wafer with a double-gradient electron limiting layer and a preparation method of the light-emitting diode epitaxial wafer. According to the epitaxial wafer, an electron limiting layer composed of three n-type AlGaN sub-layers is arranged between an n-type GaN layer and an active layer. The average Al component and Si doping concentration between the sub-layers are increased in a stepped manner, and the Al component and the Si in each sub-layer are increased in a continuous gradient manner along the growth direction. According to the invention, the Al component gradient is utilized to construct an electron deceleration barrier, the electron drift speed is reduced, and the carrier capture probability is improved; the Si concentration gradient is matched to compensate the resistivity rise and the DX center effect caused by the high Al component, the increase of the working voltage is avoided, meanwhile, the structure can induce dislocation bending, and the crystal quality of the epitaxial layer is remarkably improved.

The invention relates to a gain-free microchannel plate two-dimensional framing imaging system. The system comprises a vacuum drift tube, a long and short magnetic combined lens, a no-gain electron beam time amplifier, a gating micro-channel plate detector and a pulse generator, the long and short magnetic combined lens surrounds the outer side of the vacuum drift tube, and the no-gain electron beam time amplifier is located at the incident end of the vacuum drift tube; the gating micro-channel plate detector is located at the emergent end of the vacuum drift tube, and the area between the incident end and the emergent end in the vacuum drift tube is an electron drift area. According to the invention, the electron beam time amplification technology is adopted to improve the time resolution of the framing imaging camera, the gain-free micro-channel plate electron beam time amplifier is adopted to improve the time resolution uniformity and gain uniformity, and the long and short magnetic combined lens is adopted to improve the spatial resolution and uniformity thereof. And the effective picture size is increased by adopting a two-path broadening pulse opposite transmission mode, so that various performance indexes of the framing imaging camera are improved.

The invention relates to a projection device, a projection device and projection equipment, the projection device comprises a light source assembly and a scanning reflection assembly, the scanning reflection assembly is used for receiving light emitted by the light source assembly and deflecting the light, and scanning is carried out through the light to form a projection image; the scanning reflection assembly comprises a reflector, the reflector comprises a substrate and a reflection layer located on the substrate, and the material of the substrate comprises silicon carbide. The reflector adopts the substrate comprising silicon carbide, and the silicon carbide has relatively large forbidden bandwidth, saturated electron drift rate, heat conductivity and breakdown electric field intensity, so that the heat dissipation capability, the limit working temperature, the corresponding speed, the working frequency and the like of the reflector are improved, and the working performance of the projection device can be improved.

The invention discloses a binary mixed gas insulation strength evaluation method and device, terminal equipment and a storage medium. The method comprises the following steps: acquiring the gas content of each pure gas in binary mixed gas, the electron drift velocity in each different reduced electric field and the average electron energy; solving the net effective ionization rate function of the mixed gas to obtain corresponding common average electron energy when the net effective ionization rate crosses zero; determining the electron drift speed of each pure gas and the corresponding reduced electric field intensity under the common average electron energy; substituting the gas content of each pure gas, the electron drift velocity and the corresponding reduced electric field intensity into a preset function expression of the reduced electric field intensity, and determining a corresponding critical reduced field intensity; and evaluating the insulating strength of the mixed gas according to the critical reduced field intensity. According to the invention, the insulation strength of the binary mixed gas can be evaluated.

The invention provides a semiconductor laser element with a carrier localization layer. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the carrier localization layers of a multi-layer structure are arranged in the semiconductor laser element, the multiple carrier localization layers are arranged in the multiple lower limiting layers in a penetrating and inserting mode, and meanwhile, the Philips ionization degree distribution characteristic and the saturated electron drift rate distribution characteristic of each carrier localization layer are limited; the quantum dot superlattice interface with irregular layers is constructed, interface charge transfer is regulated and controlled, cooperative modulation of carrier density and carrier mobility is achieved, the carrier localization effect is improved, the coupling rate from the pumping energy level to the laser upper energy level is improved, the stimulated radiation efficiency of the active layer is improved, population inversion is accelerated, and limiting factors are improved.

This invention proposes a gallium nitride-based semiconductor laser with a gradient peak rate electric field waveguide layer. The fitting curves of the In ion intensity distribution or In atom concentration distribution, the fitting curve of the peak rate electric field distribution, and the fitting curve of the saturated electron drift velocity distribution obtained from SIMS testing of the upper and lower waveguide layers with the gradient peak rate electric field all satisfy any one of the Logistic function, Logistic 5 function, or Nelder function, forming a high electric field barrier. Electrons transporting from the active region to the p-type layer must overcome this barrier height, suppressing electron leakage from the active region to the p-type layer. The low electric field matches the low-velocity transport of holes, avoiding enhanced hole scattering. High injection efficiency allows carriers in the active region to quickly reach the stimulated emission threshold. The saturated electron drift velocity gradually decreases from high to low, and the low saturated electron drift velocity on the active region side avoids punch-through leakage caused by high-speed electrons rushing through the active region.

The invention relates to the technical field of radio navigation, and discloses an AI optimization indoor distribution unit electrical element integration system for 5G and Beidou fusion positioning, which comprises a main working path, a static calibration reference path and a signal sampling module, according to the system, internal electron drift is calibrated by comparing signal differences between a main working path and a static calibration reference path, additional phase drift introduced by external environment coupling is compensated by analyzing reflected signals of an antenna port, and then the two drifts are superposed to generate a full-link compensation instruction to pre-adjust the signals. According to the invention, internal electronic calibration and external physical environment perception are combined, and an end-to-end calibration closed loop from an electronic link to a physical transmitting aperture is constructed, so that the system can actively adapt to dynamic change of a deployment environment, and a communication unit is converted into a navigation reference point with reliable space-time reference.

The invention discloses an III-V group semiconductor green laser chip element which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and a magnetic tunnel junction layer is arranged between the upper waveguide layer and the upper limiting layer. The magnetic tunnel junction layer includes a first magnetic tunnel junction layer, a second magnetic tunnel junction layer, and a third magnetic tunnel junction layer. Through specific structure composition, specific saturated electron drift rate distribution and specific thermal expansion coefficient distribution, an orthogonal structure is formed to regulate and control magnetization intensity relative orientation, interface spin polarization tunneling current is enhanced, net longitudinal spin polarization tunneling current is driven by an electric field to be transported in a cluster magnetic octupole polarization direction, the transport efficiency of electrons and holes is improved, and the efficiency of the cluster magnetic field is improved. And the lasing uniformity and the gain uniformity are improved.

The invention relates to the technical field of semiconductor photoelectric devices, and particularly discloses an epitaxial structure of a semiconductor power device and a radio frequency device. The epitaxial structure of the semiconductor power device and the radio frequency device sequentially comprises a substrate, a channel layer and a barrier layer from bottom to top, and a three-dimensional electron gas layer is formed on the interface of the barrier layer and a communication layer; according to the epitaxial structure of the semiconductor power device and the radio frequency device, high-concentration three-dimensional electron gas is formed by controlling the saturation electron drift rate interface steep degree, the breakdown field strength interface steep degree and the forbidden bandwidth interface steep degree at the interface of the barrier layer and the communication layer, so that the on-resistance and the on-loss of a unit area are reduced; the interface separation energy change angle, the interface longitudinal sound velocity change angle, the interface covalent bond energy change angle and the interface valence band effective state density change angle at the interface of the barrier layer and the communication layer are modulated, the thermal strain, the switching loss and the recovery loss of the device are reduced, and the heat conduction and heat dissipation capabilities of the device are enhanced.

The invention provides a block-type irresistible cathode silicon drift detector, which adopts a block-type irresistible cathode, expands outwards in a spiral irresistible manner, increases the length of each circle and widens the width at the same time, and retains the autonomous voltage division characteristic of the whole spiral ring, so that the whole detector is formed by combining a plurality of blocks. Each block can independently regulate and control the cathode potential, so that uniform and non-interfering independent transverse electric field distribution is formed, electron drift path distortion is effectively reduced, a variant is designed, a center collection anode is optimized into a distributed anode array surrounding the whole perimeter of the detector, and the detection efficiency is improved. According to the design, the large-area SDD can provide accurate position resolution through multi-channel signal acquisition reading and position analysis.

This invention proposes a nitride semiconductor light-emitting diode (LED), comprising, from bottom to top, a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor. The quantum well is a periodic structure composed of a well layer and a barrier layer. A p-type contact layer is disposed above the p-type semiconductor. The p-type contact layer exhibits saturated electron drift velocity distribution characteristics, effective light hole mass distribution characteristics, deformation potential distribution characteristics, and polarized optical phonon energy distribution characteristics. This invention can enhance hole transport and conduction in the p-type contact layer, improve the lateral and longitudinal expansion capabilities of holes in the p-type contact layer, and improve the surge capability and human body mode electrostatic discharge (HBD) immunity of the LED. The HBD immunity is improved from a pass rate of over 90% for 100–200V to over 90% for 200–500V.