10 results about "Silicon drift detector" patented technology

The application discloses a high-precision hexagonal spiral silicon drift detector and relates to the technical field of semiconductor detection. The application obtains a second-order approximate formula of radius by combining a first-order approximate formula of radius to calculate point coordinates, so that the last number of turns is more accurately obtained to obtain the structure, and therefore, the potential electric field distribution is closer to the design requirement. The actual number of turns is more accurate on the basis of the first-order approximation, and the problem of the accuracy calculation of the number of turns of the spiral ring of the spiral silicon drift detector in the prior art, i.e., the problem of the accurate calculation of the radius of the spiral ring, is solved.

The application relates to a preparation method of a low-dark-current silicon drift detector based on a double-sided temporary bonding process, wherein after the front surface process of an SDD wafer is completed, the front surface of the SDD wafer is temporarily bonded by using temporary bonding glue and a temporary bonding glass slide; then the back surface of the SDD wafer after the temporary bonding is thinned and polished, the back surface of the SDD wafer after the thinning and polishing is subjected to a CMP process to remove a damage layer and reduce the dark current of the device; then the back surface of the SDD wafer is subjected to process manufacturing, after the manufacturing is completed, the glass slide is peeled off from the SDD wafer by using a laser debonding process, and the front surface of the wafer is exposed; wherein when the active area of the SDD wafer is manufactured, doping is shielded by using a thin gate oxide layer to be injected, the shielding oxide layer is removed after the injection is completed, and the dark current of the device is reduced by performing furnace tube oxidation and annealing; when the SDD contact hole oxide layer is removed, a manufacturing process combining dry etching and wet etching is used to avoid damage to the silicon substrate and reduce the dark current of the device.

The utility model relates to the technical field of X-ray detection, and discloses a device for detecting trace heavy metals in soil, plants and water, which comprises a shielding layer, a control sliding table module and an X-ray total reflection system are arranged in the shielding layer, a sample inlet, a cooling fan and a horizontal slide rail are arranged on the shielding layer, a sample table can be drawn out along the horizontal slide rail, and the X-ray total reflection system is arranged on the sample table. The X-ray total reflection system comprises an X-ray tube, a light guide and a detector, and the height and angle of X-rays can be adjusted by controlling the sliding table module. According to the utility model, X-rays pass through the light guide to form an incident angle with an extremely small angle, total reflection is generated on the surface of the sample table, so that background noise generated on the sample table is greatly reduced, and meanwhile, the silicon drift detector is adopted, so that the detection capability is greatly improved, and a relatively good detection capability on trace or trace elements in soil is realized; and the mass is light, the movement and the transportation are convenient, and greater portability is provided for testers.

The invention discloses a germanium-silicon bonding type photoelectric device and a preparation method, the photoelectric device at least comprises a germanium-silicon bonding substrate, the germanium-silicon bonding substrate is formed by bombarding a germanium substrate and a silicon substrate by using a non-metal fast atomic beam at a first set pressure and a first set temperature, the surface of the germanium-silicon bonding substrate is activated, and the bonding capability is enhanced; the photoelectric device structurally comprises a germanium-silicon bonding type PIN detector, and the germanium-silicon bonding type PIN detector structurally comprises but is not limited to a germanium-silicon bonding substrate, an active region electrode, a first back electrode and a first passivation contact layer; the photoelectric device further comprises a germanium-silicon bonding type silicon drift detector, and the germanium-silicon bonding type silicon drift detector structurally comprises but is not limited to a germanium-silicon bonding substrate, a drift electrode, a collector electrode, a second back electrode and a second passivation contact layer. Compared with a traditional PIN detector with a silicon substrate or a germanium substrate and a silicon drift detector, the photoelectric device combines high energy resolution and scattering capability of germanium with low noise and high detection efficiency of silicon so as to realize better detection performance.

A system may include an electron beam source configured to generate a primary electron beam and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of a sample. The set of electron-optical elements may include an objective lens disposed along an optical axis, where the objective lens includes one or more charge control plates (CCPs), where the electron-optical column includes a detector assembly configured to concurrently collect one or more backscattered electron (BSE) signals and one or more x-ray signals emanated from the sample. The detector assembly may include one or more silicon-drift detector (SDD) sensors and one or more BSE sensors.

This invention relates to the field of silicon detector technology, specifically disclosing a silicon drift detector and a simplified pressurization method for a silicon drift detector array. The silicon drift detector includes: a substrate, a hexagonal anode, a floating cathode concentric ring, and a switching resistor chain. The bottom layer of the substrate is entirely cathode and covered with a first electrode contact layer. The hexagonal anode is located at the center of the top layer of the substrate and covered with a second electrode contact layer. Multiple concentric rings of the floating cathode are arranged around the hexagonal anode. A third electrode contact layer covers the inner end of the switching resistor chain and connects to the innermost concentric ring of the floating cathode. A fourth electrode contact layer covers the outer end of the switching resistor chain and connects to the outermost concentric ring of the floating cathode. This invention can improve the performance of silicon drift detectors and simplify the pressurization method for large-area silicon drift detector arrays.

The invention relates to the technical field of silicon detectors, and particularly discloses a silicon drift detector and a silicon drift detector array with a simplified pressurization mode, and the silicon drift detector comprises a substrate, a hexagonal anode, a floating cathode concentric ring, and a break-through resistor chain. The whole surface of the bottom layer of the substrate is a cathode and is covered with a first electrode contact layer; the hexagonal anode is positioned in the center of the top layer of the substrate and is covered with a second electrode contact layer; a plurality of circles of floating cathode concentric rings are arranged around the hexagonal anode; a third electrode contact layer covers the inner end of the break-through resistance chain and is connected with the innermost floating cathode concentric ring; and a fourth electrode contact layer covers the outer end of the break-through resistance chain and is connected with the outermost floating cathode concentric ring. According to the invention, the performance of the silicon drift detector can be improved, and the pressurization mode of the large-area silicon drift detector array can be simplified.

The application discloses a through-resistance chain type silicon drift detector, which comprises a base, a circular anode, a floating cathode concentric ring and a through-resistance chain formed by doping at the center of the upper surface of the base; the through-resistance chain surrounds the circular anode, and the floating cathode concentric ring surrounds the through-resistance chain; the lower surface of the base is a bottom cathode, and an aluminum electrode contact layer of the bottom cathode covers the bottom cathode; one end of the through-resistance chain is covered with an aluminum electrode contact layer at the rear end of the through-resistance chain, the other end of the through-resistance chain is covered with an aluminum electrode contact layer at the front end of the through-resistance chain, and the circular anode is covered with an aluminum electrode contact layer; the part of the detector which is not covered with the aluminum electrode contact layer is covered with a silicon dioxide insulation layer.

The invention provides a block-type irresistible cathode silicon drift detector, which adopts a block-type irresistible cathode, expands outwards in a spiral irresistible manner, increases the length of each circle and widens the width at the same time, and retains the autonomous voltage division characteristic of the whole spiral ring, so that the whole detector is formed by combining a plurality of blocks. Each block can independently regulate and control the cathode potential, so that uniform and non-interfering independent transverse electric field distribution is formed, electron drift path distortion is effectively reduced, a variant is designed, a center collection anode is optimized into a distributed anode array surrounding the whole perimeter of the detector, and the detection efficiency is improved. According to the design, the large-area SDD can provide accurate position resolution through multi-channel signal acquisition reading and position analysis.

A system may include an electron beam source configured to generate a primary electron beam and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of a sample. The set of electron-optical elements may include an objective lens disposed along an optical axis, where the objective lens includes one or more charge control plates (CCPs), where the electron-optical column includes a detector assembly configured to concurrently collect one or more backscattered electron (BSE) signals and one or more x-ray signals emanated from the sample. The detector assembly may include one or more silicon-drift detector (SDD) sensors and one or more BSE sensors.