Silicon drift detector

Abstract

The invention provides a silicon drift detector. The silicon drift detector comprises an N type silicon wafer in a detection region, an isolation layer, a plurality of front surface electrodes arranged at intervals, back surface electrodes, and a plurality of partial pressure parts arranged at intervals, wherein a front surface region in the detection region comprises a front surface annular N region and a plurality of front surface annular P regions which are arranged at intervals; a back surface region in the detection region comprises a P type region; the isolation layer is arranged on thefront surface of the N type silicon wafer, and the isolation layer comprises multiple first contact holes formed at intervals; the multiple front surface electrodes comprise negative electrodes and positive electrodes; the negative electrodes are arranged in the corresponding first contact holes connected with the front surface annular P regions in a one-to-one correspondence manner; the positiveelectrodes are arranged in the corresponding first contact holes connected with the front surface annular N region; the back surface electrodes are arranged on the surface of the front surface region,far from the detection region, of the P type region; the multiple partial pressure parts are arranged on the surface, far from the N type silicon wafer, of the isolation layer; the partial pressure parts are positioned on the surface of the isolation layer between two adjacent negative electrodes; the partial pressure parts are electrically connected with adjacent two negative electrodes respectively; and the partial pressure parts are semiconductor partial pressure parts. The detector is simple in operation.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular to a silicon drift detector. Background technique [0002] At present, almost all synchrotron radiation fluorescence experiment stations use Si(Li) detectors for fluorescence analysis. Although the energy resolution meets the requirements, the low count rate severely limits the experimental efficiency. In recent years, Silicon Drift Detector (SDD) has been widely used in energy dispersive X-ray fluorescence spectrometer (XRF) or X-ray energy spectrometer (EDS), medical equipment, high-energy physics due to its high count rate. Research equipment, aerospace. [0003] Silicon drift detector is a relatively advanced device type in semiconductor detectors. It was invented and proposed in 1983 by E.Gatti and P.Rehak on the basis of improving the traditional silicon-based PIN detector. Its main structure is a piece of low-doped high-resistance silicon. There is a thin layer of ab...

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Problems solved by technology

[0005] The main purpose of this application is to provide a silicon drift detector

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