Charge amplification circuit for front-end reading system of silicon drift detector

Abstract

The invention discloses a charge amplification circuit for a front-end reading system of a silicon drift detector. The signal amplification circuit comprises a first-stage amplification circuit and asecond-stage amplification circuit, the input end of the first-stage amplification circuit is in direct-current coupling connection with a detector, the output end of the first-stage amplification circuit is connected with the input end of the second-stage amplification circuit, and the output end of the second-stage amplification circuit outputs amplified signals. The invention aims to solve theproblem that input signals of a silicon drift detector are extremely weak. A pre-amplification circuit structure adopting a two-stage accurate charge amplification circuit is provided, the structure multiplies and amplifies the charge quantity and then converts the charge quantity into a voltage signal, the maximum charge-voltage gain can be obtained at the minimum noise cost, and the requirementof a silicon drift detector reading system for the gain is met.

Description

technical field [0001] The invention relates to a charge amplification circuit, in particular to a charge amplification circuit used in a front-end readout system of a silicon drift detector. Background technique [0002] As a new type of semiconductor radiation detector, silicon drift detector has the advantages of low capacitance, low noise, fast response time, and high energy resolution. It is widely used in aerospace, high-energy physics experiments, medical instruments, mineral exploration and other fields. Broad application prospects. The output signal of the silicon drift detector is very weak. Therefore, in the readout system of the silicon drift detector, a preamplifier is required to pre-amplify the detected output signal with low noise and then perform subsequent processing. This will not only reduce the overall noise of the system, but also improve The signal-to-noise ratio can also reduce the design requirements of the subsequent stage circuit on noise, gain an...

AI Technical Summary

Problems solved by technology

[0006] The maximum detection energy of the output signal of the silicon drift detector is 20keV, which is equivalent to about 5500 electrons, which is much weaker than that of the general radiation detector. The ordinary charge amplifier circuit cannot achieve the required charge-voltage gain.

In addition, common charge amplifiers use double-ended input and single-ended output operational amplifiers, because they have good suppression of common mode noise and power supply noise, but compared with single-ended input operational amplifiers, they use double device, so the intrinsic noise is twice that of a single-ended input

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