Processing technology of large-area double-sided silicon drift detector

A silicon drift detector and processing technology, applied in sustainable manufacturing/processing, semiconductor devices, climate sustainability, etc., can solve the problems of introducing impurities and scrapping a unit, reducing damage, improving quality, and making the process feasible Sex-enhancing effect

Active Publication Date: 2019-09-20
湖南正芯微电子探测器有限公司
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  • Abstract
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Problems solved by technology

Third, if an impurity is introduced into a large-area SDD unit during ion implantation, one unit will be scrapped, especially when one side is implanted, there is a risk of introducing impurities on the other side

Method used

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  • Processing technology of large-area double-sided silicon drift detector
  • Processing technology of large-area double-sided silicon drift detector
  • Processing technology of large-area double-sided silicon drift detector

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Embodiment Construction

[0120] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0121] The invention obtains special innovative processes such as gettering oxidation, double-sided photolithography, and protective double-sided ion implantation through experimental analysis, and establishes the innovation of high-energy resolution and efficient collection of SDD with an intensity of 0.5-15keV soft X-ray particles way of making.

[0122] The instrument used in the present invention:

[0123] The oxidation furnace oxidizes ultra-pure high-re...

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Abstract

The invention discloses a processing technology of a large-area double-sided silicon drift detector, and belongs to the technical field of semiconductor detector processing. The process of making the large-area SDD is carried out by the eight steps of wafer gettering oxidation, double-sided mark preparation, positive and negative P-type injection etching, N-type positive injection etching, post-injection annealing, positive and negative injection region oxidation layer full etching, positive and negative electrode preparation, and rapid annealing; and the eight steps are sequentially carried out, so that the required large-area SDD is finally prepared. According to the processing technology disclosed by the invention, the purposes of improving the quality of wafer oxidation and the alignment precision of the positive and negative surfaces and greatly reducing the impurity introduction risk can be realized while the large-area double-sided SDD is prepared.

Description

technical field [0001] The invention belongs to the technical field of semiconductor detector processing, in particular to a processing technology of a large-area double-sided silicon drift detector. Background technique [0002] X-ray pulsars are remnants of the evolution, collapse, and supernova explosion of massive stars, and have extremely stable rotation periods (the stability is better than 10 -19 s / s), known as the most accurate astronomical clock in nature, can provide high-precision navigation information such as position, velocity, time, and attitude for near-Earth space, deep space exploration, and interstellar spaceflight spacecraft. Pulsar-based navigation is an eternal A new navigation system that cannot be destroyed. But the pulsar X-ray radiation flux is very low (10 -5 ph / s / cm 2 ), the detection is difficult, so the X-ray detector is the core component of the pulsar navigation system. The research on X-ray detectors in the world is developing towards the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/101
CPCH01L31/101H01L31/1876Y02P70/50
Inventor 李正刘曼文
Owner 湖南正芯微电子探测器有限公司
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