Electron transport material and preparation method and application thereof

A technology of electron transport material and electron transport layer, which is applied in the field of electron transport material and its preparation, can solve the problem that the life of QLED cannot meet the standard of commercialization, and achieve the goal of reducing defect energy level, promoting charge balance and reducing surface defects Effect

Pending Publication Date: 2021-02-09
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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  • Claims
  • Application Information

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Problems solved by technology

Although these studies have deepened people's understanding of the working mechanism of QLEDs and greatly improv

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  • Electron transport material and preparation method and application thereof
  • Electron transport material and preparation method and application thereof
  • Electron transport material and preparation method and application thereof

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preparation example Construction

[0049]A method for preparing an electron transport material includes the following steps:

[0050]Preparation of metal oxide core nanoparticles: dissolve the metal source in a solvent, add an alkaline solution, and react for 1-2 hours to obtain metal oxide nanoparticles;

[0051]Wrap the shell material on the surface of the metal oxide nanoparticles;

[0052]The bottom energy level of the conduction band of the material of the shell layer is smaller than the bottom energy level of the conduction band of the metal oxide nanoparticles.

[0053]Preferably, the step of wrapping a shell material on the surface of the metal oxide nanoparticles includes:

[0054]The shell material precursor is added to the metal oxide nanoparticles, and the reaction is for 1 h-4h.

[0055]When preparing the electron transport material of type II structure, the shell material precursor is preferably at least two of a sulfur source, a selenium source, a tellurium source and a zinc source.

[0056]The wrapping method is as follow...

Embodiment 1

[0069]This embodiment provides a core-shell structured ZnO / ZnS electron transport material and a preparation method thereof. The steps are as follows:

[0070](1) Dissolve 10mmol of zinc acetate dihydrate in 20ml of dimethyl sulfoxide, then take 10mmol of tetramethylammonium hydroxide and dissolve in 10ml of ethanol, add the tetramethylammonium hydroxide solution dropwise to zinc acetate In the solution and heated to 60℃, keep stirring, react for 1 hour;

[0071](2) After 1 hour, when the reaction is over, add excess n-hexane to the above solution, then centrifuge to obtain ZnO precipitate, which is air-dried and dissolved in ethanol. Obtain a ZnO nanoparticle solution;

[0072](3) Take 50ml of the above-mentioned ZnO nanoparticle solution with a concentration of 10mg / ml, and then drop 10ml of sodium sulfide solution with a concentration of 0.1M into it, and stir for 1 hour;

[0073](4) After 1 hour, take 10ml of 0.1M zinc chloride solution and drop it into the above solution drop by drop, cont...

Embodiment 2

[0076]This embodiment provides a core-shell structured ZnO / ZnSe electron transport material and a preparation method thereof. The steps are as follows:

[0077](1) Dissolve 10mmol of zinc acetate dihydrate in 20ml of dimethyl sulfoxide, then take 10mmol of tetramethylammonium hydroxide and dissolve in 10ml of ethanol, add the tetramethylammonium hydroxide solution dropwise to zinc acetate In the solution and heated to 60℃, keep stirring, react for 1 hour;

[0078](2) After 1 hour, when the reaction is over, add excess n-hexane to the above solution, then centrifuge to obtain ZnO precipitate, and then dissolve in ethanol after air drying to obtain a ZnO nanoparticle solution;

[0079](3) Take 50ml of the above ZnO nanoparticle solution with a concentration of 10mg / ml, and then drop 10ml of sodium selenite solution with a concentration of 0.1M into it, and stir for 1 hour;

[0080](6) After 1 hour, take 10ml of 0.1M zinc chloride solution and drop it into the above solution drop by drop, continue...

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Abstract

The invention relates to an electron transport material and a preparation method and application thereof. The structure of the electron transport material comprises an inner core and a shell layer, wherein the inner core is made of metal oxide; and the conduction band bottom energy level of the material of the shell layer is smaller than the conduction band bottom energy level of the material of the inner core. The electron transport material has an electron quantum well energy level structure, the electron mobility of an electron transport layer can be effectively reduced, the number of electrons moving to a quantum dot light-emitting layer is reduced, and QLED charge balance is promoted.

Description

Technical field[0001]The present invention relates to the field of light-emitting devices, in particular to electron transport materials and preparation methods and applications thereof.Background technique[0002]Due to the unique optical properties of quantum dots, for example, the emission wavelength is continuously adjustable with size and composition, narrow emission spectrum, high fluorescence efficiency, and good stability, quantum dot light-emitting diodes (QLEDs) have received extensive attention and research in the display field. At the same time, QLED display also has many advantages that cannot be realized by LCDs, such as large viewing angle, high contrast, fast response speed, and flexibility, so it is expected to become the next generation of display technology.[0003]After decades of development, the performance of QLEDs has made great progress. For example, without a special light extraction layer, the highest external quantum efficiency reported for red and green QLED...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54
CPCH10K50/115H10K50/16H10K2102/00
Inventor 苏亮
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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