40results about How to "Reduced electron mobility" patented technology

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18 / cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.

A semiconductor substrate of the present invention has: a substrate; a buffer layer on the substrate, said buffer layer being formed of a carbon-containing nitride semiconductor; a high-resistance layer on the buffer layer, said high-resistance layer being formed of a carbon-containing nitride semiconductor; and a channel layer on the high-resistance layer, said channel layer being formed of a nitride semiconductor. The semiconductor substrate is characterized in that the high-resistance layer has: a first region having a carbon concentration lower than that of the buffer layer; and a second region, which is provided between the first region and the channel layer, and which has a carbon concentration higher than that of the first region. Consequently, a leak current is reduced by improving crystallinity, while maintaining the high resistance of the high-resistance layer, and crystallinity of the channel layer formed on the high-resistance layer is also increased, thereby providing the semiconductor substrate wherein deterioration of electron mobility and generation of current collapse in the channel layer are suppressed.

An organic-inorganic lighting device and a method for fabricating the same is disclosed. Firstly, a conductive substrate is provided, and an inorganic conducting film layer and a seed layer are formed in turn on the conductive substrate. Next, an array of micro and nano zinc oxide wire is formed on the seed layer by using properties of the seed layer. Finally, an electrode layer is formed on the array of micro and nano zinc oxide wire. The invention solves the problem of low mobility of electrons in inorganic materials.

The invention provides a precursor solution of an indium gallium zinc oxide thin film and a preparation method of an indium gallium zinc oxide thin film transistor, which relate to the technical fieldof semiconductors. The precursor solution comprises indium salt, gallium salt, zinc salt, a stabilizer and a solvent, wherein the stabilizer is ethanolamine. Ethanolamine is adopted to help promote the oxidation process of the precursor solution and reduce the concentration of oxygen vacancies in the indium gallium zinc oxide thin film, so that the problem of threshold voltage negative bias of the thin film transistor taking the indium gallium zinc oxide thin film as the channel layer is solved.

The application provides a compound, an electronic component and an electronic device, which relate to the technical field of organic materials. The compound is shown in formula I, wherein, X 1 、X 2 and X 3 The same or different, and each independently selected from: carbon or nitrogen, where X 1 、X 2 and X 3 Not simultaneously carbon; L is selected from: single bond, arylene, heteroarylene, aralkylene, heteroaralkylene; Ar 1 is selected from: alkyl, cycloalkyl, aryl, heteroaryl, alkoxy, alkylamino, arylamino, aralkylamino; Ar 2 、Ar 3 The same or different, and each independently selected from: cycloalkyl, aryl, heteroaryl, alkoxy, alkylamino, arylamino, aralkylamino. The compound of the present application can reduce the working voltage of the electronic components, improve the luminous efficiency of the electronic components and prolong the service life of the devices.

The invention discloses a myoelectric detection device combined with a laparoscope and an operation method thereof, comprising a working mirror tube, a laparoscope and a myoelectric detection electrode, wherein the inside of the working mirror tube is provided with an imaging channel and an electrode channel parallel to each other. The mirror is set in the imaging channel, and the myoelectric detection electrode is set in the electrode channel. The myoelectric detection electrode includes a medical trocar needle, an electrode, two inner sleeves and an outer sleeve with different inner diameters and nested in each other, and the medical trocar needle. It is fixed on one end of the outer cannula, and the electrode is fixed on the inner cannula. The electrode on one side of the inner cannula is introduced into the medical cannula needle and the front end of the electrode is flush with the needle tip of the medical cannula needle. The other end of the inner cannula The electrode tail on the side is connected with the biological signal acquisition system through a wire. The operation trauma of the present invention is small, can effectively alleviate the pain of the patient, recover quickly after the operation, reduce the interference factors caused by the operation, and make the experimental results more convincing.

The invention discloses a quantum dot light-emitting diode, comprising: an anode, a cathode, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the quantum dot light-emitting layer and the cathode, wherein, The electron transport layer includes: an inorganic layer, a metal layer and an organic layer, the inorganic layer is arranged close to the quantum dot light-emitting layer, the organic layer is arranged close to the cathode, and the metal layer is arranged between the inorganic layer and the Between the organic layers; the material of the inorganic layer includes a metal oxide, and the material of the organic layer includes an organic electron transport material. The invention provides an electron transport layer with an inorganic / metal / organic composite structure. On the basis of reducing the electron mobility of the electron transport layer and promoting the charge balance of quantum dot light-emitting diodes, it reduces the defect state of the inorganic / organic composite interface and reduces the interface impedance. , and reduce the oxygen vacancies of inorganic metal oxides, thereby improving the efficiency and lifetime of quantum dot light-emitting diodes.

A method for making a Schottky barrier diode includes the following steps. A first metal layer, a second metal layer and a carbon nanotube composite material are provided. The carbon nanotube composite material is applied on the first metal layer and the second metal layer to form a semiconductor layer. The carbon nanotube composite material includes an insulated polymer and a number of carbon nanotubes dispersed in the insulated polymer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer.

The invention discloses a quantum dot light-emitting diode and a preparation method thereof, wherein the quantum dot light-emitting diode comprises a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode, and the cathode and the quantum dot light-emitting layer An electron transport layer is also provided between them, and the material of the electron transport layer is a mixed material composed of PAMAM dendrimers and nanometer metal oxides. Since PAMAM dendrimers are both σ-donors and π-donors, PAMAM dendrimers have a certain electron-transport ability, but because PAMAM dendrimers themselves do not have free electrons, their electron-transport ability is lower than that of metal oxides. Words are weak. The present invention uses a mixed material composed of PAMAM dendrimers and nano-metal oxides as the electron transport layer material, which can reduce the electron mobility of quantum dot light-emitting diodes, so that the electron-hole injection rate of quantum dot light-emitting diodes reaches a balance, and then Improve the luminous efficiency of quantum dot light-emitting diodes.