7results about How to "Reduced electron mobility" patented technology

The application relates to a gallium nitride epitaxial structure forming method and a semiconductor device. The method comprises the following steps: sequentially forming a buffer layer, an intrinsic GaN layer and an AlGaN layer on a substrate; growing a P-type doped GaN epitaxial layer on the AlGaN layer, controlling the doping concentration and thickness of the P-type GaN layer, performing N-type ion implantation on the P-type GaN layer, controlling the implantation depth in the range of 20nm-30nm, and then performing annealing. In another mode, the AlGaN layer is subjected to P-type ion implantation before the P-type GaN layer is grown to form an asymmetric P-type doped area, and then annealing is performed, and the implantation area is still P-type after annealing by controlling the implantation dose. In the semiconductor device, the contact layer is obtained by patterning the P-type GaN layer, and the P-type doped area with the highest doping concentration or the largest doping area is arranged at the position of the contact layer. The gate breakdown voltage can be improved, the threshold voltage can be stabilized, the low on-resistance can be maintained, and the CMOS process compatibility can be realized.

The invention belongs to the technical field of semiconductors, relates to a high electron mobility transistor (HEMT), and particularly provides a high-voltage GaN high electron mobility transistor with a stepped electric field auxiliary voltage-resistant layer, which is used for solving the problems of low breakdown voltage, high specific on-resistance, current collapse effect and the like of the traditional GaN HEMT device. The invention creatively provides a stepped electric field auxiliary voltage-withstanding layer structure for improving the breakdown voltage of the device, so that the electric field distribution between the grid electrode and the drain electrode of the device is more uniform, and the problem of electric field concentration caused by the fact that polarized charges are attracted by the grid electrode is solved, thereby greatly improving the breakdown voltage of the device and improving the reliability of the device. On the basis, the influence of current collapse on the device is weakened, and the reliability of the device is improved; according to the invention, a new design direction and thought are provided for the high-voltage GaN HEMT device, and commercial application of the high-voltage GaN HEMT device is facilitated.

The invention discloses a nano material and a preparation method thereof, a thin film, a photoelectric device and a display device, and relates to the technical field of display. The nano-material comprises inorganic nano-particles and a first ligand connected to the inorganic nano-particles, and the structural formula of the first ligand is shown in the specification, r1, R2, R3, R4 and R5 are respectively and independently selected from one or more of H, D, halogen, carboxyl, nitryl, cyano, aldehyde group, sulfo group, isothiocyano, C1-C30 halogenated alkyl, substituted or unsubstituted C1-C30 alkyl carbonyl and substituted or unsubstituted C1-C30 alkoxy carbonyl; in the formula, R1, R2, R3, R4 and R5 are independently selected from one or more of H, D, halogen, carboxyl, nitryl, cyano, aldehyde group, sulfo group, isothiocyano, C1-C30 halogenated alkyl, substituted or unsubstituted C1-C30 alkyl carbonyl and substituted or unsubstituted C1-C30 alkoxy carbonyl; at least one of R1, R2, R3, R4 and R5 is selected from isothiocyano groups. The nano material provided by the invention has relatively low electron mobility.

The present invention discloses a compound containing naphthalene and triazine structure, an organic electroluminescent device and a display element, and belongs to the technical field of semiconductor materials. The structure of the compound of the present invention is shown in the general formula (1): The compound containing naphthalene and triazine structure of the present invention is applied to an organic electroluminescent device. The compound of the present invention is based on the structure of naphthalene and triazine, and the triazine and triazine groups are connected by a specific aromatic bridging group to form a phenyl-substituted naphthyl or naphthyl-substituted phenyl or biphenyl framework bridging feature. The compound has good electron tolerance and stability, and has good electron injection and transmission capabilities. Therefore, when it is used as an electron transmission material of an OLED functional layer, it can effectively reduce the device driving voltage and improve the photoelectric performance and device life of the OLED device.

The present invention discloses an organic electroluminescent composition, an organic electroluminescent device and a display device comprising the same. The organic electroluminescent composition comprises: a first host material selected from an N-type organic semiconductor material as shown in the following formula I: a second host material selected from a P-type organic semiconductor material. The technical solution can at least solve the problem of more Dexter energy transfer, TTA and TPQ in phosphorescent devices, which leads to serious efficiency roll-off at high current density.

The invention discloses a light-emitting device, a preparation method thereof and a display device. According to the light-emitting device, the surface of the first inorganic material in the first electron transport layer close to the light-emitting layer is connected with the halogen ligand, on one hand, the halogen ligand can improve the position of the conduction band energy level of the first inorganic material, and therefore the potential barrier of an interface between the light-emitting layer and the electron function layer is increased; the organic light-emitting device can limit the region of excitons in the light-emitting layer, can improve the recombination efficiency of the light-emitting layer and can avoid damage to the electronic function layer, and the surface of a second inorganic material in the second electron transport layer close to the second electrode is connected with a long carbon chain ligand with the carbon atom number of 4-12, so that the electron mobility of the second electron transport layer can be reduced, and the light-emitting efficiency of the organic light-emitting device is improved. Electron injection is reduced, carrier balance is improved, and the service life of the light-emitting device is prolonged.

The invention relates to the field of semiconductors, in particular to a preparation process of a TMBS device, which comprises the following steps of: 1, cutting, polishing, cleaning and drying a silicon substrate in sequence, and using the silicon substrate as a substrate material; 2, forming an epitaxial layer on the upper surface of the substrate material; step 3, processing the epitaxial layer in an etching mode to form a groove, forming an oxide layer on the inner surface of the groove, and then filling the groove with polycrystalline silicon; and 4, setting a Schottky barrier layer, setting a metal electrode, and leading out a positive electrode and a negative electrode through the metal electrode, thereby completing the preparation of the TMBS device. According to the device prepared by the invention, the germanium bismuth selenide is used as the epitaxial layer, so that the breakdown characteristic of the device and unstable factors of leakage current are well improved, the breakdown resistance is improved, the leakage current density is reduced, and the reliability of the device is improved.