2results about How to "Reduced electron mobility" patented technology

The application relates to a gallium nitride epitaxial structure forming method and a semiconductor device. The method comprises the following steps: sequentially forming a buffer layer, an intrinsic GaN layer and an AlGaN layer on a substrate; growing a P-type doped GaN epitaxial layer on the AlGaN layer, controlling the doping concentration and thickness of the P-type GaN layer, performing N-type ion implantation on the P-type GaN layer, controlling the implantation depth in the range of 20nm-30nm, and then performing annealing. In another mode, the AlGaN layer is subjected to P-type ion implantation before the P-type GaN layer is grown to form an asymmetric P-type doped area, and then annealing is performed, and the implantation area is still P-type after annealing by controlling the implantation dose. In the semiconductor device, the contact layer is obtained by patterning the P-type GaN layer, and the P-type doped area with the highest doping concentration or the largest doping area is arranged at the position of the contact layer. The gate breakdown voltage can be improved, the threshold voltage can be stabilized, the low on-resistance can be maintained, and the CMOS process compatibility can be realized.

The invention discloses a nano material and a preparation method thereof, a thin film, a photoelectric device and a display device, and relates to the technical field of display. The nano-material comprises inorganic nano-particles and a first ligand connected to the inorganic nano-particles, and the structural formula of the first ligand is shown in the specification, r1, R2, R3, R4 and R5 are respectively and independently selected from one or more of H, D, halogen, carboxyl, nitryl, cyano, aldehyde group, sulfo group, isothiocyano, C1-C30 halogenated alkyl, substituted or unsubstituted C1-C30 alkyl carbonyl and substituted or unsubstituted C1-C30 alkoxy carbonyl; in the formula, R1, R2, R3, R4 and R5 are independently selected from one or more of H, D, halogen, carboxyl, nitryl, cyano, aldehyde group, sulfo group, isothiocyano, C1-C30 halogenated alkyl, substituted or unsubstituted C1-C30 alkyl carbonyl and substituted or unsubstituted C1-C30 alkoxy carbonyl; at least one of R1, R2, R3, R4 and R5 is selected from isothiocyano groups. The nano material provided by the invention has relatively low electron mobility.