40results about How to "Reduced electron mobility" patented technology

A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10⁻¹⁸/cm³, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

The invention provides a zinc oxide nanocrystal, a preparation method thereof, a zinc oxide nanocrystal ink and an electro-luminescence device. The zinc oxide nanocrystal comprises surface ligands, which are S-P-R1, R2, R3, wherein R1, R2 and R3 are separately independently selected from any of alkyls of C1-10. The surface ligands of the zinc oxide nanocrystal together with the zinc oxide nanocrystal can form a layer of coating ZnS, which can not only weaken defect luminescence mainly led to by dangling bonds of Zn on the surface of the zinc oxide nanocrystal, but also conveniently adjust the surface ligands of the zinc oxide nanocrystal by adjusting the variety of sulfur precursors to further adjust the electronic mobility of ZnO. The electrical property of zinc oxide nanocrystal film formed by the zinc oxide nanocrystal is improved, and further the problem of defect luminescence of quantum dot light emitting diodes can be solved.

In a semiconductor device of the present invention, the top surface of an n-type silicon carbide layer formed on a silicon carbide substrate is miscut from the (0001) plane in the <11-20> direction. A gate electrode, a source electrode and other elements are arranged such that in a channel region, the dominating current flows along a miscut direction. In the present invention, a gate insulating film is formed and then heat treatment is performed in an atmosphere containing a group-V element. In this way, the interface state density at the interface between the silicon carbide layer and the gate insulating film is reduced. As a result, the electron mobility becomes higher in a miscut direction A than in the direction perpendicular to the miscut direction A.

The invention discloses a novel stimulating electrode based in-vitro brain slice electrical signal recording device which comprises a brain slice recording slot, a brain slice storage slot, a gas supply device, a perfusing drug-delivery device, a temperature control device, an electrode fixing and operating device, a neural network signal recording device and a dissecting microscope. Two microelectrodes are fixed to the electrode fixing and operating device and are inserted into a feeding groove from a top cover of the brain slice recording slot, the other end of each microelectrode is connected with the neural network signal recording device through a lead, the two microelectrodes are a stimulating microelectrode and a recording microelectrode respectively, and the stimulating microelectrode is an epoxy resin/graphene/nano-copper composite material electrode. The novel stimulating electrode based in-vitro brain slice electrical signal recording device effectively overcomes the defect that an old in-vitro brain slice recording device cannot automatically control the temperature, is provided with a smaller feeding groove, is inconvenient to use and makes records inaccurate and does not efficiently stimulate microelectrodes due to shake caused by various situations.

A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.

The invention belongs to the technical field of electroluminescent illumination, and particularly relates to an electroluminescent LED based on Co-doped ZnO as an electron transport layer and a preparation method thereof. The electroluminescent LED adopts ITO as a cathode, a ZnO nanocrystalline film as the electron transport layer, CsPbI3 nanocrystalline as a luminescent layer, 4, 4', 4''-tri(carbazole-9-yl)-triphenylamine (TCTA) as a hole transport layer, MoO3 as a hole injection layer, and metal Ag as an anode. The Co-doped ZnO nanocrystalline is used as the electron transport layer, so that the injection balance of carriers of the luminescent layer of the electroluminescent LED is improved, and meanwhile, the exciton quenching of a ZnO/CsPbI3 interface is inhibited, thereby realizing the preparation of an efficient electroluminescent LED device.

A Schottky barrier diode includes a first metal layer, a second metal layer separated form the first metal layer, and a semiconductor layer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer. The semiconductor layer includes an insulated polymer material and a number of carbon nanotubes dispersed in the insulated polymer material.

The invention discloses an ultraviolet light-emitting diode with an electron deceleration layer structure. The light-emitting diode sequentially comprises a substrate, an AlN nucleating layer, an AlN buffer layer, a non-doped AlGaN buffer layer, an n-type AlGaN layer, a B(Al, Ga)N electron deceleration layer, an Al<x>Ga<1-x>N/Al<y>Ga<1-y>N multi-quantum well active region, a p-type AlGaN layer and a p-type GaN ohmic contact layer from bottom to top. Compared with the Al<x>Ga<1-x>N/Al<y>Ga<1-y>N heterojunction, the B(Al, Ga)N/AlGaN heterojunction has a larger conduction band offset and valence band offset ratio, so that the rate of electrons entering the active region from the n-type region can be limited more effectively. Secondly, a traditional p-type doped electron barrier layer is removed, the efficiency of hole injection into an active region can be improved, and the radiation recombination efficiency of electron holes in the active region is improved. Besides, polarized charges can be generated at the two ends of the B(Al, Ga)N electron deceleration layer, a polarized electric field with the same electron migration direction can be formed, and the migration rate of electrons entering an active region from an n-type region can be reduced, so that the electron capture efficiency of the quantum well is improved, the radiation recombination probability of the electrons and holes in the quantum well is increased, and the light emitting efficiency of the UV-LED is improved.

The invention discloses a quantum dot light-emitting diode. The quantum dot light-emitting diode comprises an anode, a cathode, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the quantum dot light-emitting layer and the cathode, wherein the electron transport layer comprises an inorganic layer, a metal layer and an organic layer, the inorganic layer is arranged close to the quantum dot light-emitting layer, the organic layer is arranged close to the cathode, and the metal layer is arranged between the inorganic layer and the organic layer; the material of the inorganic layer comprises a metal oxide, and the material of the organic layer comprises an organic electron transport material. Provided by the invention is an inorganic/metal/organic composite structure electron transport layer, which reduces the defect mode of an inorganic/organic composite interface on the basis of reducing the electron mobility of the electron transport layer and promoting the charge balance of the quantum dot light-emitting diode, reduces the interface impedance, and reduces the oxygen vacancy of inorganic metal oxide, so that the efficiency of the quantum dot light-emitting diode is improved, and the service life of the quantum dot light-emitting diode is prolonged.

The invention discloses an image display device, a quantum dot light-emitting diode and a manufacturing method thereof, and belongs to the field of display equipment. The quantum dot light-emitting diode includes an anode layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode layer, wherein the hole transport layer formed on the anode; the quantum dot light-emitting layer is formed on the hole transport layer and contains quantum dots and a first inorganic salt, and the first inorganic salt comprises bicarbonate and/or hydrosulfite; the electron transport layer is formed on the quantum dot light-emitting layer and contains metal oxide and borohydride; and the cathode layer is formed on the electron transport layer. The quantum dot light-emitting diode can achieve improved device efficiency and lifetime through processing.

A method for manufacturing a thin film transistor is provided. The method comprises depositing sequentially a gate insulating layer and a gate metal layer on a semiconductor substrate; etching the gate metal layer uncovered by the first photoresist pattern; implementing a first ion implantation on the semiconductor substrate; etching a side wall of the first photoresist pattern; implementing a second ion implantation on the semiconductor substrate to form a source and a drain. The source and the drain include a heavily doped drain region and a lightly doped drain region.

The invention discloses electron transport ink, an electron transport layer, an electroluminescent diode and a display device. The electron transmission ink comprises a dispersing agent and dispersoid dispersed in the dispersing agent, the dispersoid comprises a first electron transmission material and a second electron transmission material, the first electron transmission material and the second electron transmission material are both selected from nano particles of materials with electron transmission capacity, the particle size of the second electron transmission material is 20-100 nm, and the particle size ratio of the first electron transport material to the second electron transport material is (0.05-0.15): 1. An electron transmission film prepared from the electron transmission ink is more compact, generation of leakage current can be effectively inhibited, and the current efficiency of a device is improved. In addition, the electron transport film can also play a role in balancing carriers in the electroluminescent diode, and the luminous efficiency of the device is improved.

The invention discloses a compound taking xanthone-linked dibenzofuran as a core. The structure of the compound is shown in a general formula (1) which is described in the specification. The compound contains a xanthone-linked dibenzofuran parent nucleus and a rigid branched chain structure, has relatively high glass transition temperature and molecular thermal stability, proper HOMO, LUMO energy levels and T1 energy level, high chemical bond energy and high carrier mobility, can effectively improve the efficiency of an OLED device through device structure optimization, and especially can reduce the voltage of the OLED device and prolong the service life of the OLED device.

The invention provides an interconnection structure, a manufacturing method thereof and a memory. The interconnection structure comprises a first dielectric layer and a second dielectric layer, the second dielectric layer is located on the first dielectric layer; the third dielectric layer is located on the second dielectric layer; the at least one first conductive column penetrates through the first dielectric layer and the second dielectric layer, and all the first conductive columns in the at least one first conductive column are electrically isolated from one another, each first conductive column in the at least one first conductive column comprises a first part located in the first dielectric layer and a second part located in the second dielectric layer, and the diameter width of the second part is changed along with the change of the height of the second part; and the metal layer penetrates through the third dielectric layer, and the metal layer is connected with the at least one first conductive column.