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Precursor solution of indium gallium zinc oxide thin film and preparation method of indium gallium zinc oxide thin film transistor

A technology of indium gallium zinc oxide and precursor liquid, which is applied in the direction of transistors, chemical instruments and methods, gallium/indium/thallium compounds, etc., can solve problems such as negative threshold voltage bias, improve negative threshold voltage bias, improve performance, The effect of reducing the concentration of oxygen vacancies

Inactive Publication Date: 2020-12-01
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a precursor solution of indium gallium zinc oxide thin film and a preparation method of indium gallium zinc oxide thin film transistor (IGZO-TFT), to solve the problem of excessive carrier concentration inside the indium gallium zinc oxide thin film. The resulting problem of negative threshold voltage bias has improved the phenomenon of negative threshold voltage bias of thin film transistors with indium gallium zinc oxide as the channel layer, so that the threshold voltage of indium gallium zinc oxide thin film transistors is closer to zero

Method used

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  • Precursor solution of indium gallium zinc oxide thin film and preparation method of indium gallium zinc oxide thin film transistor

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Embodiment 1

[0052] This embodiment provides a kind of precursor liquid of indium gallium zinc oxide thin film, and it comprises indium salt, gallium salt, zinc salt, stabilizer and solvent; Wherein indium salt is hydrated indium nitrate (In(NO 3 ) 3 ·3H 2 O); gallium salt is hydrated gallium nitrate (Ga(NO 3 ) 3 ·3H 2 O); the zinc salt is zinc nitrate hydrate (Zn(NO 3 ) 2 2H 2 O); the stabilizer is ethanolamine; the mass concentration of ethanolamine in the precursor solution is 18 mg / ml; the mol ratio of the indium ion, gallium ion and zinc ion in the precursor solution is 6:1:3; the solvent is 2-methoxy base ethanol.

[0053] This embodiment also provides a method for preparing an indium gallium zinc oxide thin film transistor using the above precursor solution, which includes the following steps:

[0054] (1) Preparing the precursor solution of the above-mentioned indium gallium zinc oxide thin film.

[0055] The specific method is: hydrated indium nitrate (In(NO 3 ) 3 ·xH ...

Embodiment 2

[0063] The difference between this example and Example 1 is that the mass concentration of ethanolamine in the precursor solution is 6 mg / ml. Other operating steps and parameters are all the same as in Example 1.

Embodiment 3

[0065] The difference between this embodiment and embodiment 2 is that the molar ratio of indium ions, gallium ions and zinc ions in the precursor solution is 7:1:2. Other operation steps and parameter are all identical with embodiment 2.

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Abstract

The invention provides a precursor solution of an indium gallium zinc oxide thin film and a preparation method of an indium gallium zinc oxide thin film transistor, which relate to the technical fieldof semiconductors. The precursor solution comprises indium salt, gallium salt, zinc salt, a stabilizer and a solvent, wherein the stabilizer is ethanolamine. Ethanolamine is adopted to help promote the oxidation process of the precursor solution and reduce the concentration of oxygen vacancies in the indium gallium zinc oxide thin film, so that the problem of threshold voltage negative bias of the thin film transistor taking the indium gallium zinc oxide thin film as the channel layer is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a precursor liquid of an indium gallium zinc oxide thin film and a preparation method of an indium gallium zinc oxide thin film transistor. Background technique [0002] Metal oxide semiconductors represented by indium gallium zinc oxide (IGZO) are semiconductor materials with excellent performance. Compared with traditional amorphous silicon, indium gallium zinc oxide metal oxide materials have high electron mobility, good Excellent properties such as isotropy and high light transmittance are expected to be applied in the field of flat panel display. [0003] The preparation of oxide films by solution method is a desirable way to reduce the cost of coating films, but the formulation of oxide precursors is difficult to stably obtain devices with consistent performance, and the high carrier concentration inside the film will lead to negative bias of the threshold v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/24H01L21/34C01G15/00
CPCH01L29/66969H01L29/7869H01L29/24C01G15/00C23C18/1216C23C18/04C23C18/1295C23C14/08C23C14/24H01L29/786
Inventor 孙荷静邱恒达周航
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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