Quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied to electrical components, circuits, organic semiconductor devices, etc., can solve the problems of decreased electron injection ability, decreased efficiency of quantum dot light-emitting diodes, and reduced number of electrons.

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the efficiency of quantum dot light-emitting diodes tends to decrease, which may be because: (1) Inorganic metal oxides are easy to form ohmic contact with the cathode, while the effect of organic matter and the cathode to form ohmic contact will decrease, which reduces the electron injection ability; ( 2) There is a d

Method used

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preparation example Construction

[0042] To figure 1 The structure shown is an example. The embodiment of the present invention also provides a method for manufacturing a quantum dot light emitting diode, which includes the following steps:

[0043] Provide anode;

[0044] Preparing a hole transport layer on the anode;

[0045] Preparing a quantum dot light-emitting layer on the hole transport layer;

[0046] An electron transport layer is prepared on the quantum dot light-emitting layer; wherein, the preparation method of the electron transport layer specifically includes the steps of: preparing an inorganic layer on the quantum dot light-emitting layer, preparing a metal layer on the inorganic layer, and Preparing an organic layer on the metal layer;

[0047] A cathode is prepared on the electron transport layer.

[0048] In a preferred embodiment, in order to accelerate the alloying effect between the metal and the inorganic metal oxide, the prepared quantum dot light-emitting diode can be heated. More preferably, t...

Embodiment 1

[0054] Example 1: Combination figure 2 As shown, the method for preparing a quantum dot light-emitting diode based on an inorganic / metal / organic composite structure electron transport layer includes the following steps:

[0055] Using ITO as the anode, in an air environment, deposit 30nm thick PEDOT:PSS as a hole injection layer on the ITO surface by solution method, and annealed at 150℃ for 10 minutes;

[0056] N 2 Under the environment, deposit 30nm thick TFB as a hole transport layer on the surface of the hole injection layer by solution method, and annealed at 150°C for 30 minutes;

[0057] N 2 Under the environment, deposit 25nm thick CdSe / ZnS quantum dots as the quantum dot light-emitting layer on the surface of the hole transport layer by solution method, and annealed at 100°C for 30 minutes;

[0058] N 2 Under the environment, deposit 15nm thick ZnO as an inorganic layer on the surface of the quantum dot light-emitting layer by solution method, and annealed at 80°C for 30 minu...

Embodiment 2

[0063] Example 2: Combination image 3 As shown, the method for preparing a quantum dot light emitting diode based on an inorganic / inorganic metal / metal / organic composite structure electron transport layer includes the following steps:

[0064] Using ITO as the anode, in an air environment, deposit 30nm thick PEDOT:PSS as a hole injection layer on the ITO surface by solution method, and annealed at 150℃ for 10 minutes;

[0065] N 2 Under the environment, deposit 30nm thick TFB on the surface of the hole injection layer as a hole transport layer by solution method, and annealed at 150°C for 30 minutes;

[0066] N 2 Under the environment, deposit 25nm thick CdSe / ZnS quantum dots on the surface of the hole transport layer as the quantum dot light-emitting layer by solution method, and annealed at 100°C for 30 minutes;

[0067] Transfer the above-mentioned substrates to the evaporation chamber, and vacuum to Pa is below Pa, and then 5nm thick ZnO is deposited as an inorganic layer at a sp...

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Abstract

The invention discloses a quantum dot light-emitting diode. The quantum dot light-emitting diode comprises an anode, a cathode, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the quantum dot light-emitting layer and the cathode, wherein the electron transport layer comprises an inorganic layer, a metal layer and an organic layer, the inorganic layer is arranged close to the quantum dot light-emitting layer, the organic layer is arranged close to the cathode, and the metal layer is arranged between the inorganic layer and the organic layer; the material of the inorganic layer comprises a metal oxide, and the material of the organic layer comprises an organic electron transport material. Provided by the invention is an inorganic/metal/organic composite structure electron transport layer, which reduces the defect mode of an inorganic/organic composite interface on the basis of reducing the electron mobility of the electron transport layer and promoting the charge balance of the quantum dot light-emitting diode, reduces the interface impedance, and reduces the oxygen vacancy of inorganic metal oxide, so that the efficiency of the quantum dot light-emitting diode is improved, and the service life of the quantum dot light-emitting diode is prolonged.

Description

Technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a quantum dot light-emitting diode. Background technique [0002] Due to the unique optical properties of quantum dots, for example, the emission wavelength is continuously adjustable with size and composition, narrow emission spectrum, high fluorescence efficiency, and good stability, electroluminescent diodes based on quantum dots have received extensive attention and research in the display field. In addition, quantum dot light-emitting diode displays also have many advantages that cannot be realized by LCDs, such as large viewing angle, high contrast, fast response speed, and flexibility, and are therefore expected to become the next generation of display technology. [0003] After decades of development, the performance of quantum dot light-emitting diodes has made great progress. One of the important reasons is the use of metal oxide nanoparticles as electron tran...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/649H10K85/30H10K50/115H10K50/166H10K2102/101H10K2102/00H10K71/00
Inventor 苏亮
Owner TCL CORPORATION
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