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A quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, electric solid-state devices, etc., can solve the problems of low luminous efficiency and unbalanced charge injection of quantum dot light-emitting diodes, so as to improve the luminous efficiency, The effect of reducing electron mobility and electron-hole injection rate balance

Active Publication Date: 2021-10-22
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of low luminous efficiency caused by the unbalanced charge injection of the existing quantum dot light-emitting diodes

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  • A quantum dot light-emitting diode and its preparation method

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Embodiment 1

[0060] A quantum dot light-emitting diode, which includes an anode substrate, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode stacked from bottom to top, wherein the material of the electron transport layer is made of the fifth generation PAMAM A hybrid material composed of dendrimers and nano-zinc oxide. The preparation method of the quantum dot light-emitting diode comprises the steps of:

[0061] 1) Preparation of nano-zinc oxide: Disperse 0.5mol of zinc acetate hydrate in 25ml of dimethyl sulfoxide to make it completely dispersed, and disperse 0.55mol of tetramethylammonium hydroxide in 30ml of ethanol to make it completely Disperse, mix and stir the two mixtures at room temperature for 1 hour, and perform centrifugal cleaning to obtain nano-zinc oxide;

[0062] 2) Preparation of colloidal solution: Add 20mg of fifth-generation PAMAM dendrimers and 50mg of nano-zinc oxide into 1ml of ethanol, and mix to prepare a coll...

Embodiment 2

[0069] A quantum dot light-emitting diode, which includes an anode substrate, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode stacked from bottom to top, wherein the electron transport layer is made of a second-generation PAMAM tree A hybrid material composed of shape molecules and nano-nickel oxide. The preparation method of the quantum dot light-emitting diode comprises the steps of:

[0070] 1) Preparation of nano-nickel oxide: Disperse 0.5mol of nickel acetate hydrate in 25ml of dimethyl sulfoxide to make it completely dispersed, and disperse 0.55mol of tetramethylammonium hydroxide in 30ml of ethanol to make it completely Disperse, mix and stir the two mixtures at room temperature for 1 hour, and perform centrifugal cleaning to obtain nano-nickel oxide;

[0071] 2) Preparation of colloidal solution: Add 30mg of second-generation PAMAM dendrimers and 70mg of nano-nickel oxide into 1ml of ethanol, and mix to prepare a c...

Embodiment 3

[0078] A quantum dot light-emitting diode, which includes an anode substrate, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode stacked from bottom to top, wherein the electron transport layer is made of a first-generation PAMAM tree A hybrid material composed of dendrimers, fourth-generation PAMAM dendrimers and nano-nickel oxide. The preparation method of the quantum dot light-emitting diode comprises the steps of:

[0079] 1) Preparation of nano-nickel oxide: Disperse 0.5mol of nickel acetate hydrate in 25ml of dimethyl sulfoxide to make it completely dispersed, and disperse 0.55mol of tetramethylammonium hydroxide in 30ml of ethanol to make it completely Disperse, mix and stir the two mixtures at room temperature for 1 hour, and perform centrifugal cleaning to obtain nano-nickel oxide;

[0080] 2) Preparation of colloidal solution: Add 10 mg of the first-generation PAMAM dendrimer, 20 mg of the fourth-generation PAMAM de...

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Abstract

The invention discloses a quantum dot light-emitting diode and a preparation method thereof, wherein the quantum dot light-emitting diode comprises a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode, and the cathode and the quantum dot light-emitting layer An electron transport layer is also provided between them, and the material of the electron transport layer is a mixed material composed of PAMAM dendrimers and nanometer metal oxides. Since PAMAM dendrimers are both σ-donors and π-donors, PAMAM dendrimers have a certain electron-transport ability, but because PAMAM dendrimers themselves do not have free electrons, their electron-transport ability is lower than that of metal oxides. Words are weak. The present invention uses a mixed material composed of PAMAM dendrimers and nano-metal oxides as the electron transport layer material, which can reduce the electron mobility of quantum dot light-emitting diodes, so that the electron-hole injection rate of quantum dot light-emitting diodes reaches a balance, and then Improve the luminous efficiency of quantum dot light-emitting diodes.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting diodes, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode is an important new display technology in the future. There are still many technical problems in the commercialization of quantum dot display technology, such as unstable device efficiency and poor lifespan. The main factor affecting these devices is the imbalance of the charge injection of the device. lead to. [0003] For example, when quantum dots with different structural systems are used to prepare light-emitting diodes (QLEDs) under the same device structure, the device efficiency and life will be different. The reason is that quantum dots with different structural systems have different requirements for electron-hole injection balance. Therefore, it is necessary to adjust and optimize the charge injection balance of the device...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/111H10K50/165H10K2102/101H10K2102/102H10K2102/00H10K71/00H10K50/00
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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