76results about How to "Improve charge balance" patented technology

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

It is an object to provide an organic light-emitting element having two or more light-emitting layers, wherein degradation of each constituent material for the light-emitting layer is reduced to improve reliability of the element. The present invention provides an organic light-emitting element having a laminated structure with a first mixed light-emitting layer 4 composed of a hole transport material, an electron transport material and a dopant which determines a color of an emitted light, and a second mixed light-emitting layer 5 composed of a hole transport material, an electron transport material and a dopant which determines a color of an emitted light, and also provides an image display device which uses the organic light-emitting element.

This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each of the trenches is filled with a plurality of epitaxial layers of alternating conductivity types constituting nano tubes functioning as conducting channels stacked as layers extending along a sidewall direction with a “Gap Filler” layer filling a merging-gap between the nano tubes disposed substantially at a center of each of the trenches. The “Gap Filler” layer can be very lightly doped Silicon or grown and deposited dielectric layer. In an exemplary embodiment, the plurality of trenches are separated by pillar columns each having a width approximately half to one-third of a width of the trenches.

An organic electroluminescence device is provided which employs a metal oxide electrode having particular composition distribution of elements to extend the life. A conventional approach for extending the life of an electroluminescence device is not provided by considering the degradation mechanism of how the organic electroluminescence device is degraded by the driving with electric current. The composite ratio of compounds of an electrode made of metal oxide forming part of the organic electroluminescence device is substantially uniform from a surface through which the carriers are injected from the electrode toward a deeper section in a bulk layer of the electrode. Thus, the electrode has stoichiometrically stable composition to prevent the degradation of electrode materials and diffusion into the organic layer, thereby providing a longer life.

Provided are an organic light emitting device (OLED) comprising: a first electrode; a second electrode; a hole injection layer (HIL), a hole transporting layer (HTL), and an emitting layer sequentially formed between the first electrode and the second electrode, wherein the work function, the IP or the absolute value of the highest occupied molecular orbital (HOMO) level of the HIL is greater than or equal to the absolute value of HOMO level of the HTL. In the OLED, the energy relationships between organic layers are controlled to facilitate hole injection and optimize the charge balance. Thus the efficiency of the OLED improves and the lifetime of the OLED increases.

An organic light-emitting diode including: a first mixed layer between an emission layer and a first electrode and including first and second compounds; a second mixed layer between the emission layer and the first mixed layer and including third and fourth compounds; a first charge generation layer between the first mixed layer and the first electrode and including the first and second compounds and a first charge generation material; a second charge generation layer between the first mixed layer and the second mixed layer and including the third and fourth compounds and a second charge generation material; and a buffer layer between the emission layer and the second mixed layer, the first and the third compounds are each independently a compound represented by Formula 1 below, and the second compound and fourth compounds are each independently a compound represented by Formula 2 below:

Disclosed is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple configuration. This organic EL device has a light-emitting layer between an anode and a cathode piled one upon another on a substrate and the said light-emitting layer contains a fused polycyclic compound in which seven or more rings are fused together as a host material. The aforementioned fused polycyclic compound has a structure formed by fusing two or more indole rings to a carbazole ring. A specific example thereof is the compound represented by the following formula.

The present invention provides an apparatus and a method for producing a magnetic recording medium, which are free from base film breakage, capable of running a base film stably during a vapor deposition preparation stage and a vapor deposition step, and excellent in production efficiency. The production apparatus comprises a supply roll 14 for delivering a non-magnetic substrate 1, a rotary cooling drum 20, a crucible 17 housing a vapor deposition material 18, a maximum incident angle regulating mask 21A for regulating a maximum incident angle of an evaporated vapor deposition material to the non-magnetic substrate, a minimum incident angle regulating mask 21B for regulating a minimum incident angle, a pair of edge portion regulating masks 21C and 21D for regulating deposition on both edges in a width direction of the non-magnetic substrate 1 surface, a shutter 23 capable of opening and closing an aperture among masks 21A, 21B, 21C, and 21D, and a winding roll 16, wherein the edge portion regulating masks 21C and 21D are provided in such a manner as to keep a distance d_A between ends on upstream side of the edge portion regulating masks and the cooling drum 20 larger than a distance d_B between ends on downstream side of the edge portion regulating masks and the cooling drum 20.

The invention discloses a super-junction power device. A super-junction structure is formed on an N-type epitaxial layer; each groove is filled with a P-type post in the super-junction structure; the side surface of each groove is of an inclined structure to facilitate etching and filling of the groove; a doping compensation layer formed through ion implantation is formed on the side surface of each groove; and the doping concentration of each doping compensation layer in the direction from the top part of the corresponding groove to the bottom part is gradually changed for compensating the influence of the widths of the grooves at different depths on the charge balance of the P-type posts and N-type posts, so that the charge balance of the P-type posts at different depths of the grooves and the adjacent N-type posts is improved to improve the puncture voltage of the super-junction power device. The invention further discloses a manufacturing method of the super-junction power device. The puncture voltage of the super-junction structure with the inclined structures on the side surfaces of the grooves can be improved; and meanwhile, the device can also has good anti-impact ability.

Provides herein are a compound capable of improving light emitting efficiency, stability, and lifespan of the element, an organic element using the same, and an electric device for the same.

The invention belongs to the field of photoelectric materials and specifically provides an organic electrophosphorescent main body material. A structural formula of the organic electrophosphorescent main body material is as shown in formula (1) in the specification, wherein R is H or C1-C6 alkyl. The organic electrophosphorescent main body material disclosed by the invention has excellent dissolving performance, film-forming performance and thermal stability, and has higher electron transporting performance. The invention further provides a preparation method of the organic electrophosphorescent main body material and an organic electroluminescence device containing the organic electrophosphorescent main body material.

The invention requests and protects a dual-light emitting layer structure blue-light OLED device and a manufacturing process thereof. The device comprises a positive electrode substrate, a hole injection layer, a hole transmission layer, a first light-emitting layer, a second light-emitting layer, an electronic transmission layer, an electronic injection layer and a negative electrode, wherein the first light-emitting layer and the second light-emitting layer employ the same main body materials, same object material and same thickness, and the object doping concentration of the first light-emitting layer is not higher than 50% of the object doping concentration of the second light-emitting layer. The dual-light emitting layer structure provided by the technical scheme is simple, the exciton utilization rate and the composite region can be expanded, and the efficiency roll-off of the device is effectively improved.

Representative methods, apparatus and systems are disclosed for providing concurrent electrical stimulation and electrical recording in a human or non-human subject, such as for neuromodulation, with the apparatus coupleable to an electrode array. A representative apparatus is typically an integrated circuit including: stimulation circuits, recording circuits, and blocking circuits responsive to control signals to block the stimulation voltage or current on an electrode from a corresponding recording circuit, while other recording circuits may simultaneously record electrical signals from other electrodes and generate recorded data. A representative stimulation circuit may include current sources; a first multiplexer for current source selection; a second multiplexer for electrode selection; a switchable voltage offset circuit; a switchable grounding circuit; and a stimulation controller providing control signals to provide the electrical stimulation, such as biphasic or monophasic stimulation, and bipolor or unipolar stimulation. Off-chip communication, control, along with power and voltage level control, are also provided.

This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each of the trenches is filled with a plurality of epitaxial layers of alternating conductivity types constituting nano tubes functioning as conducting channels stacked as layers extending along a sidewall direction with a “Gap Filler” layer filling a merging-gap between the nano tubes disposed substantially at a center of each of the trenches. The “Gap Filler” layer can be very lightly doped Silicon or grown and deposited dielectric layer. In an exemplary embodiment, the plurality of trenches are separated by pillar columns each having a width approximately half to one-third of a width of the trenches.