The present invention relates to a
room temperature nitrogen dioxide sensor preparation method based on a reduced
graphene-
semiconductor. The preparation method comprises: adding
graphite and NaNO3 into H2SO4, adding KMnO4, carrying out a reaction in a constant temperature water bath pot, adding deionized water, terminating the reaction, adding a H2O2 solution and
hydrochloric acid to obtain an oxidized
graphene suspension, dissolving inorganic salt
powder in deionized water, adding the obtained solution to the oxidized
graphene suspension,
drying in a
high pressure kettle to obtain corresponding
powder, preparing an interdigital
electrode and a wiring terminal on the front surface of a substrate by using a monocrystal
silicon wafer Si as an insulating substrate, and preparing a reduced graphene-
semiconductor composite coating just above the interdigital
electrode. According to the present invention, the defects of sensor
power consumption increasing, sensor service lifer shortening, detection
safety risk increasing and the like in the prior art are overcome with the preparation method of the present invention; and the characteristics of large specific surface area, fast
electron transport, good light absorption, fast response,
fast recovery and lower
working temperature of the reduced graphene are utilized.