Humidity sensor based on graphene oxide/graphene/silicon and preparation method thereof

A humidity sensor, graphene technology, applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of incomplete integrated circuits, humidity sensors and silicon, etc., and achieve low cost, high sensitivity, and wide response range Effect

Inactive Publication Date: 2015-12-09
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These stand-alone humidity sensors are not highly bonded to silicon and cannot be well

Method used

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  • Humidity sensor based on graphene oxide/graphene/silicon and preparation method thereof
  • Humidity sensor based on graphene oxide/graphene/silicon and preparation method thereof
  • Humidity sensor based on graphene oxide/graphene/silicon and preparation method thereof

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[0023] Reference figure 1 with figure 2 , The present invention is based on the graphene oxide / graphene / silicon heterogeneous structure humidity sensor, from bottom to top there are bottom electrode 7, n-type silicon substrate 1, silicon dioxide isolation layer 2, said silicon dioxide isolation layer 2 is provided with a window 3, the upper surface of the silicon dioxide isolation layer is provided with a top electrode 4, the top electrode 4 is covered with a single layer of graphene 5 and a graphene oxide film layer 6, and the single layer of graphene 5 and the window 3 The n-type silicon substrate contacts to form a graphene / silicon Schottky junction. The boundary of the top electrode 4 is smaller than the boundary of the silicon dioxide isolation layer 2, and the boundary of the single-layer graphene 5 and the graphene oxide film layer 6 is smaller than that of the top electrode 4. Outer boundary.

[0024] Wherein, the thickness of the n-type silicon substrate is generally 30...

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Abstract

The invention discloses a humidity sensor based on graphene oxide/graphene/silicon and a preparation method thereof, wherein the humidity sensor comprises an n-type silicon substrate, a silicon window, a silicon dioxide insulation layer, graphene, graphene oxide, a top electrode and a bottom electrode. A graphene/silicon schottky junction in the humidity sensor is high in multiple transmission speed and is sensitive in reaction, and meanwhile, because that graphene is high in transparence, is high in electric conductivity and heat conductivity and is high in mechanical strength, the humidity sensor is available in various special applications under ultra-common conditions. By means of the graphene oxide as a humidity sensitive layer, electrical characters of the graphene/silicon schottky junction are influenced. The humidity sensor having such structure is simple to manufacture, allows quick and simple measurement, is high in sensitivity, can be used for manufacturing an integrated sensor through combination of mature semiconductor silicon technologies in a packaging manner. The humidity sensor has significant market prospect.

Description

technical field [0001] The invention belongs to the application field of graphene novel sensors, in particular to a graphene oxide / graphene / silicon-based humidity sensor and a preparation method thereof. Background technique [0002] Humidity is closely related to people's life and industrial activities. The amount of moisture in the atmosphere can usually be measured by absolute humidity, relative humidity, and specific humidity. The humidity sensor is used to measure the relative humidity value under certain temperature conditions. The level of relative humidity directly affects people's comfort, and it has a great impact on industrial control, semiconductor process flow, biomedical products, food storage, etc. [0003] Since the discovery of graphene in 2004, various applications of graphene have emerged one after another. As a derivative of graphene, graphene oxide has been successfully synthesized by chemical graphite oxide method long before graphene was discovered....

Claims

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Application Information

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IPC IPC(8): G01N27/00
Inventor 徐杨施添锦万霞王锋王雪俞滨骆季奎
Owner ZHEJIANG UNIV
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