53results about How to "Increase the equivalent series resistance" patented technology

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

A band stop filter is provided for a lead wire of an active medical device (AMD). The band stop filter includes a capacitor in parallel with an inductor. The parallel capacitor and inductor are placed in series with the lead wire of the AMD, wherein values of capacitance and inductance are selected such that the band stop filter is resonant at a selected frequency. The Q of the inductor may be relatively maximized and the Q of the capacitor may be relatively minimized to reduce the overall Q of the band stop filter to attenuate current flow through the lead wire along a range of selected frequencies. In a preferred form, the band stop filter is integrated into a TIP and / or RING electrode for an active implantable medical device.

A bandstop filter having optimum component values is provided for a lead of an active implantable medical device (AIMD). The bandstop filter includes a capacitor in parallel with an inductor. The parallel capacitor and inductor are placed in series with the implantable lead of the AIMD, wherein values of capacitance and inductance are selected such that the bandstop filter is resonant at a selected frequency. The Q of the inductor may be relatively maximized and the Q of the capacitor may be relatively minimized to reduce the overall Q of the bandstop filter to attenuate current flow through the implantable lead along a range of selected frequencies.

A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film that fills the trench and covers a top surface of the substrate. and etching the oxide film off the top surface of the substrate and inside the trench to leave a substantially flat layer of oxide having a target thickness at the bottom of the trench. The oxide film can be deposited by sub-atmospheric chemical vapor deposition processes, directional Tetraethoxysilate (TEOS) processes, or high density plasma deposition processes that form a thicker oxide at the bottom of the trench than on the sidewalls of the trench.

A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material.

A multilayer ceramic capacitor assembly capable of exhibiting low high-frequency inductance and a controlled equivalent series resistance (ESR) while maintaining a useful capacitance value includes respective pluralities of first and second electrode elements interleaved to form a stack. Controlled ESR is achieved either through inclusion of specific types of materials or through alteration of the shape of various component parts. A resistive material may be used in typical end terminations, via terminations, electrode elements or connective tab structures. Additionally, the dielectric may be made lossy so as to enhance resistivity without overly affecting device capacitance. Still further, an additional layer of resistive material may be added to an outer device surface to connect filled-via terminations to end terminations or radial resistive prints may be used to only partially fill the vias. Finally, various electrode element configurations, such as flat plate, serpentine, mesh, L-, O- or U-shaped patterns, may be employed.

A shielded component or network for an active medical device (AMD) implantable lead includes (1) an implantable lead having a length extending from a proximal end to a distal end, all external of an AMD housing, (2) a passive component or network disposed somewhere along the length of the implantable lead, the passive component or network including at least one inductive component having a first inductive value, and (3) an electromagnetic shield substantially surrounding the inductive component or the passive network. The first inductive value of the inductive component is adjusted to a account for a shift in its inductance to a second inductive value when shielded.

The present invention generally relates to improved capacitors; in particular, the present invention provides advanced valve metal (AVM) anodes and methods for fabricating AVM anodes having complex surface and interior features for use in high energy density capacitors. Such anodes find use in high voltage capacitors incorporated into implantable medical devices (IMDs), among other uses. The AVM anodes may be pressed into virtually any arbitrary shape and may have a gradually changing (or substantially constant) density profile throughout the AVM anode. Such AVM anodes may also be perforated or shaped to receive one or more cathode members. The AVM anodes enhance packaging efficiency for compact high energy density capacitors.

An electric double layer capacitor (EDLC) in a coin or button cell configuration having low equivalent series resistance (ESR). The capacitor comprises mesh or other porous metal that is attached via conducting adhesive to one or both the current collectors. The mesh is embedded into the surface of the adjacent electrode, thereby reducing the interfacial resistance between the electrode and the current collector, thus reducing the ESR of the capacitor.

A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part.

A medical lead system includes at least one bandstop filter for attenuating current flow through the lead across a range of frequencies. The bandstop filter has an overall circuit Q wherein the resultant 3 dB bandwidth is at least 10 kHz. The values of capacitance and inductance of the bandstop filter are selected such that the bandstop filter is resonant at a selected center frequency or range of frequencies. Preferably, the bandstop filter has an overall circuit Q wherein the resultant 10 dB bandwidth is at least 10 kHz. Such bandstop filters are backwards compatible with known implantable deployment systems and extraction systems.

The solid electrolytic capacitor includes an anode body formed of a sintered body consisting of metal particles; a dielectric layer provided on the top surface of the anode body; and a conducting polymer layer provided on the top surface of the dielectric layer. The anode body includes a first anode portion and a second anode portion which is provided in a way that the second anode portion covers the first anode portion, and in that the particle diameter of metal particles for the second anode portion is smaller than that of metal particles for the first anode portion.

A multilayer capacitor comprises a multilayer body and a plurality of terminal electrodes formed on the multilayer body. The plurality of terminal electrodes include first and second terminal electrodes. The multilayer body is constructed by alternately laminating a plurality of dielectric layers and first and second inner electrode layers. The first inner electrode layer includes a first lead electrode electrically connected to the first terminal electrode and a first capacitor electrode forming a capacitance component. The portion positioned between a pair of slits provided in the first capacitor electrode is continuous with the first lead electrode. The second inner electrode layer includes a second lead electrode electrically connected to the second terminal electrode and a second capacitor electrode forming a capacitance component. The portion positioned between a pair of slits provided in the second capacitor electrode is continuous with the second lead electrode.

A multilayer capacitor comprises a multilayer body in which a plurality of dielectric layers and a plurality of first and second inner electrodes are alternately laminated, and first and second terminal electrodes formed on the multilayer body. The plurality of first and second inner electrodes are electrically connected to each other through a connecting conductor. A part of the plurality of first inner electrodes and a part of the plurality of second inner electrodes are electrically connected to the first and second terminal electrodes through lead conductors, respectively. Each first inner electrode connected to the respective first terminal electrode through the lead conductor and each second inner electrode connected to the respective terminal electrode through the lead conductor are arranged at positions symmetrical to each other about the center position in the laminating direction of the multilayer body. Alternatively, one or a plurality of first inner electrodes connected to the first terminal electrode through the lead conductor and one or a plurality of second inner electrodes connected to the second terminal electrode through the lead conductor are arranged at respective positions symmetrical to each other about the center position in the laminating direction of the multilayer body.

The invention discloses an ultraviolet LED flip chip which comprises the components of a substrate, and an epitaxial layer structure which is arranged on the substrate. The epitaxial layer structure comprises the components of a buffering and nucleation layer, a superlattice structure, a heavily doped n-type AlGaN layer, a lightly doped n-type AlGaN layer, a quantum well active region, an electron blocking layer, a P-type conductive layer, a reflecting layer, a current extending layer, an insulating layer and a conductive film layer, wherein the buffering and nucleation layer, the superlattice structure, the heavily doped n-type AlGaN layer, the lightly doped n-type AlGaN layer, the quantum well active region, the electron blocking layer, the P-type conductive layer, the reflecting layer, the current extending layer, the insulating layer and the conductive film layer are successively arranged in a first direction. The first direction is perpendicular with the substrate and extends from the substrate to the epitaxial layer structure. The ultraviolet LED flip chip has advantages of effective electric leakage prevention, high light emitting efficiency, low voltage surge, effective static discharge damage prevention, high heat radiation efficiency, high reliability, etc.

The self-resonance insertion loss dip of a feedthrough capacitor is reduced or eliminated by raising the equivalent series resistance of the capacitor, thus minimizing the capacitor Q. The equivalent series resistance of the capacitor can be raised by forming voids in the active and / or ground electrode plates of the capacitor. The electrode plates may be formed so as to have a relatively reduced thickness, or a relatively increased thickness. A conductive material having a relatively high resistivity may be used to form the active and / or ground electrode plates of the capacitor. Alternatively, the conductive material forming the electrode plates may have a dielectric material added thereto.

A medical lead system includes at least one bandstop filter for attenuating current flow through the lead across a range of frequencies. The bandstop filter has an overall circuit Q wherein the resultant 3 dB bandwidth is at least 10 kHz. The values of capacitance and inductance of the bandstop filter are selected such that the bandstop filter is resonant at a selected center frequency or range of frequencies. Preferably, the bandstop filter has an overall circuit Q wherein the resultant 10 dB bandwidth is at least 10 kHz. Such bandstop filters are backwards compatible with known implantable deployment systems and extraction systems.

A multilayer capacitor comprises a capacitor body, a first connecting conductor arranged on a first side face of the capacitor body, first and second terminal electrodes, and a first insulator arranged between the first connecting conductor and first terminal electrode. The capacitor body has a plurality of laminated insulator layers and a plurality of first and second inner electrodes. The second terminal electrode is connected to the second inner electrode. Each of the first inner electrodes has a first lead portion exposing an end to the first side face. At least one of the first inner electrodes also has a second lead portion whose end is exposed to the first side face. The first connecting conductor continuously covers all the ends of the first lead portions of the first inner electrodes and mechanically connects with the ends of the first lead portions. The first terminal electrode continuously covers the whole area of the first insulator and the ends of the second lead portions of the first inner electrodes exposed to the first side face, and is electrically connected to the second lead portions of the first inner electrodes.

The multilayer body 1 is constructed by alternately laminating a plurality of dielectric layers 11 to 22 and a plurality of first and second inner electrodes 31 to 34, 31 to 34. The first inner electrodes 31 to 34 are electrically connected to each other through the first connecting conductor 7. The first inner electrode 31 is electrically connected to the first terminal electrode 3 through the lead conductor 37. The second inner electrodes 41 to 44 are electrically connected to each other through the second connecting conductor 9. The second inner electrode 44 is electrically connected to the second terminal electrode 5 through the lead conductor 47. The first inner electrode 31 and the second inner electrode 44 are arranged at respective positions symmetrical to each other about the center position M in the laminating direction of the multilayer body 1.

There is provided a multilayer ceramic electronic component, including: a ceramic element having a plurality of dielectric layers laminated therein; and first and second internal electrodes formed within the ceramic element, wherein the first and second internal electrodes include 80 to 99.98 wt % of nickel (Ni), 0.01 to 10 wt % of copper (Cu), and 0.01 to 10 wt % of barium titanate (BaTiO3).

A multilayer chip capacitor includes a capacitor body including first and second longer side surfaces facing each other and first and second shorter side surfaces facing each other, first and second external electrodes respectively disposed at the first and second longer side surfaces, one or more first internal electrode pairs each including first and second internal electrodes, and one or more second internal electrode pairs each including third and fourth internal electrodes. The first to fourth internal electrodes each have one lead and are sequentially disposed in a stacked direction. The first to fourth internal electrodes have first to fourth leads respectively extending to first to fourth corners or portions adjacent thereto, and alternately connected with the first and second external electrodes. The first internal electrode pair and the second internal electrode pair cause a current to diagonally flow in opposite directions with respect to a long side direction.

A multilayer capacitor comprises a multilayer body in which dielectric layers and first and second inner electrodes are alternately laminated, and first and second terminal conductors and first and second outer connecting conductors. At least one each of first and second terminal conductors and the first outer connecting conductor are formed on a first side face of the multilayer body. At least one each of the first and second terminal conductors and the second outer connecting conductor are formed on a second side face of the multilayer body opposing the first side face. Each inner electrode is electrically connected to the corresponding outer connecting conductors. First and second inner connecting conductors electrically connected to the corresponding terminal and outer connecting conductors are laminated in the multilayer body. An equivalent series resistance is set to a desirable value by adjusting the number or positions of the inner connecting conductors.

A capacitor component includes a body with a plurality of first and second internal electrodes alternately stacked with dielectric layers interposed therebetween. First and second connection electrodes extend in a thickness direction of the body and are respectively connected to the first and second internal electrodes. First and second lower electrodes are on a lower surface of the body and are respectively connected to the first and second connection electrodes.