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Electroluminescent LED based on Co-doped ZnO as electron transport layer and preparation method thereof

A technology of electron transport layer and luminescence, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of increasing the Auger recombination rate of the light-emitting layer, limiting the performance of perovskite nanocrystal LEDs, etc., and achieving the goal of improving radiation efficiency Effect

Pending Publication Date: 2022-01-11
JILIN UNIV
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Problems solved by technology

In addition to improving the radiative efficiency and coupling-out efficiency of the material, the balance of carrier injection in the LED light-emitting layer (EML) is indispensable for realizing high-efficiency perovskite nanocrystalline LEDs, because unbalanced carrier injection in LEDs will Increased Auger recombination rate of the light-emitting layer, thereby limiting the performance of perovskite nanocrystalline LEDs

Method used

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  • Electroluminescent LED based on Co-doped ZnO as electron transport layer and preparation method thereof
  • Electroluminescent LED based on Co-doped ZnO as electron transport layer and preparation method thereof
  • Electroluminescent LED based on Co-doped ZnO as electron transport layer and preparation method thereof

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Embodiment 1

[0042] An electroluminescent LED based on Co-doped ZnO as an electron transport layer and a preparation method thereof, comprising: a cathode, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer and an anode;

[0043] Among them, the Co-doped ZnO nanocrystalline film was used as the perovskite CsPbI 3 The electron transport layer of nanocrystalline LED, by reducing the electron mobility of the ZnO electron transport layer to achieve the balance of carrier injection in the LED light-emitting layer, and inhibiting ZnO / CsPbI by passivating ZnO nanocrystal defects 3 Exciton quenching at the interface to fabricate high-efficiency electroluminescent LEDs.

[0044] Specifically, the cathode is ITO conductive glass.

[0045] Specifically, the light-emitting layer is CsPbI 3 nanocrystalline film.

[0046] Specifically, the hole transport layer is 4,4',4"-tris(carbazol-9-yl)-triphenylamine (TCTA).

[0047] Specifically, the hole inject...

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Abstract

The invention belongs to the technical field of electroluminescent illumination, and particularly relates to an electroluminescent LED based on Co-doped ZnO as an electron transport layer and a preparation method thereof. The electroluminescent LED adopts ITO as a cathode, a ZnO nanocrystalline film as the electron transport layer, CsPbI3 nanocrystalline as a luminescent layer, 4, 4', 4''-tri(carbazole-9-yl)-triphenylamine (TCTA) as a hole transport layer, MoO3 as a hole injection layer, and metal Ag as an anode. The Co-doped ZnO nanocrystalline is used as the electron transport layer, so that the injection balance of carriers of the luminescent layer of the electroluminescent LED is improved, and meanwhile, the exciton quenching of a ZnO / CsPbI3 interface is inhibited, thereby realizing the preparation of an efficient electroluminescent LED device.

Description

technical field [0001] The invention relates to the technical field of electroluminescent lighting, in particular to an electroluminescent LED based on Co-doped ZnO as an electron transport layer and a preparation method thereof. Background technique [0002] All-inorganic metal halide perovskite nanocrystalline LEDs are promising for future ultra-high-definition display applications due to their tunable emission bandgap and high color purity. Up to now, the external quantum efficiency (EQE) of perovskite nanocrystal LEDs has reached 23.4% through the optimization of perovskite nanocrystals, and the high-efficiency light extraction through hemispherical lenses has reached 45.5%. In addition to improving the radiative efficiency and coupling-out efficiency of the material, the balance of carrier injection in the LED light-emitting layer (EML) is indispensable for realizing high-efficiency perovskite nanocrystalline LEDs, because unbalanced carrier injection in LEDs will Incr...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/15H10K71/12H10K50/115H10K50/165
Inventor 白雪唐成园于伟泳沈欣宇张宇陆敏武振楠
Owner JILIN UNIV
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