Electroluminescent LED based on Co-doped ZnO as electron transport layer and preparation method thereof
A technology of electron transport layer and luminescence, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of increasing the Auger recombination rate of the light-emitting layer, limiting the performance of perovskite nanocrystal LEDs, etc., and achieving the goal of improving radiation efficiency Effect
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[0042] An electroluminescent LED based on Co-doped ZnO as an electron transport layer and a preparation method thereof, comprising: a cathode, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer and an anode;
[0043] Among them, the Co-doped ZnO nanocrystalline film was used as the perovskite CsPbI 3 The electron transport layer of nanocrystalline LED, by reducing the electron mobility of the ZnO electron transport layer to achieve the balance of carrier injection in the LED light-emitting layer, and inhibiting ZnO / CsPbI by passivating ZnO nanocrystal defects 3 Exciton quenching at the interface to fabricate high-efficiency electroluminescent LEDs.
[0044] Specifically, the cathode is ITO conductive glass.
[0045] Specifically, the light-emitting layer is CsPbI 3 nanocrystalline film.
[0046] Specifically, the hole transport layer is 4,4',4"-tris(carbazol-9-yl)-triphenylamine (TCTA).
[0047] Specifically, the hole inject...
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