Microcomputer electric stacking type millimeter wave antenna

A millimeter-wave antenna and electrical stacking technology, applied in the field of antennas, can solve the problems of deterioration of radiation pattern, degradation of microstrip antenna performance, and large dielectric loss.

Active Publication Date: 2008-03-12
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This requires the antenna to be fabricated on a high-permittivity dielectric substrate. However, compared with a low-permittivity dielectric substrate, a high-permittivity substrate is more likely to excite surface waves, and at the same time produces a larger dielectric Loss, the performance of the microstrip antenna is significantly reduced, the radiation efficiency is lower, the bandwidth is narrower, the radiation pattern is deteriorated, and unnecessary coupling is generated between the radiation elements in the array structure, etc.

Method used

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  • Microcomputer electric stacking type millimeter wave antenna
  • Microcomputer electric stacking type millimeter wave antenna
  • Microcomputer electric stacking type millimeter wave antenna

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Embodiment Construction

[0038] The following are the embodiments provided by the present invention, which are specifically introduced in conjunction with FIGS. 1 and 2 .

[0039] FIG. 1 is a layered perspective view of an embodiment of the present invention. The MEMS 3-layer stacked millimeter wave antenna provided by the embodiment of the present invention includes an upper dielectric substrate (101), a middle dielectric substrate (102) and a lower dielectric substrate (103), the upper dielectric substrate (101) The material is glass, the material of the middle dielectric substrate (102) is high resistance silicon, the material of the lower dielectric substrate (103) is high resistance silicon, and the upper surface of the upper dielectric substrate (101) is deposited There is metal and is etched to form a first metal radiation patch (104), and the upper surface of the middle layer dielectric substrate (102) is etched with a shallow pool (105) where metal is deposited and etched to form a second met...

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Abstract

The invention provides a micro electromechanical cascade millimeter wave antenna, comprising an upper anisotropic substrate, a middle anisotropic substrate and a lower anisotropic substrate. The upper surface deposit of the upper anisotropic substrate is provided with metal and forms a first metal radiation patch by mechanical erosion. The upper surface deposit of the middle anisotropic substrate is provided with metal and forms a second metal radiation patch by mechanical erosion. The upper surface deposit of the lower anisotropic substrate is provided with metal and forms a FGCPW-MS feeder or a MS feeder by mechanical erosion. The upper anisotropic substrate, the middle anisotropic substrate and the lower anisotropic substrate form a unit by MEMS bonding technology. The antenna has small size and light weight, which is also easy for the further integration.

Description

technical field [0001] The invention relates to the field of antennas, in particular to micro-electromechanical laminated millimeter-wave antennas. Background technique [0002] The development and maturity of microwave integration technology and the emergence of various low-loss dielectric materials ensure the manufacturing process of microstrip antennas and reduce manufacturing costs. With the application of computer-aided design analysis software, the design of microstrip antennas is easier ,more reliable. The maturity of materials, technology, and design makes microstrip antennas small in size, light in weight, low in profile, easy to conform, and low in cost. They are widely used in many fields such as satellite communications, radar, remote sensing and telemetry, navigation, and biomedical systems. However, the microstrip antenna also has two defects of narrow operating frequency band and low radiation efficiency, which greatly affect the performance of the microstrip...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q1/38B81C1/00H05K3/06
Inventor 朱健侯芳郁元卫
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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