Ultraviolet light-emitting diode with electron deceleration layer structure

A technology of light-emitting diodes and deceleration layers, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of difficulty in significantly improving UV-LED luminous efficiency, limited effect, and high difficulty in epitaxial growth, so as to improve the uniformity of spatial distribution and increase Efficiency, the effect of reducing electron mobility

Inactive Publication Date: 2021-06-18
SOUTHEAST UNIV
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the use of this technology not only requires high difficulty in epitaxial growth, but also has limited effects, which is not enough to c

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet light-emitting diode with electron deceleration layer structure
  • Ultraviolet light-emitting diode with electron deceleration layer structure

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0013] The present invention will be further explained in conjunction with the accompanying drawings.

[0014] Such as figure 1 , The ultraviolet light emitting diode having a layer structure of an electronic deceleration, comprising sequentially disposed from the bottom of the substrate 101, AlN nucleation layer 102, AlN buffer layer 103, an undoped AlGaN buffer layer 104, n-type AlGaN layer 105 , B (Al, Ga) n electron reducer 106, Al x GA 1-x N / al y GA 1-y N Multi-quantian well has source region 107, the P-type AlGaN layer 108, and the P-type GaN ohmic contact layer 109, and P-type ohmic electrodes 110 and p-type GaN ohmic contact layer 109 provided on the n-type AlGaN layer 105 set on the P-type GaN ohmic contact layer 109 The ohmic electrode 111, wherein 0

[0015] B (Al, Ga) N electron reduction layer 106 of undoped or doped with any configuration BAlN, BGaN BAlGaN or n-type layer, and it is always larger than the band gap band gap of n-type AlGaN layer 105, The B...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an ultraviolet light-emitting diode with an electron deceleration layer structure. The light-emitting diode sequentially comprises a substrate, an AlN nucleating layer, an AlN buffer layer, a non-doped AlGaN buffer layer, an n-type AlGaN layer, a B(Al, Ga)N electron deceleration layer, an Al<x>Ga<1-x>N/Al<y>Ga<1-y>N multi-quantum well active region, a p-type AlGaN layer and a p-type GaN ohmic contact layer from bottom to top. Compared with the Al<x>Ga<1-x>N/Al<y>Ga<1-y>N heterojunction, the B(Al, Ga)N/AlGaN heterojunction has a larger conduction band offset and valence band offset ratio, so that the rate of electrons entering the active region from the n-type region can be limited more effectively. Secondly, a traditional p-type doped electron barrier layer is removed, the efficiency of hole injection into an active region can be improved, and the radiation recombination efficiency of electron holes in the active region is improved. Besides, polarized charges can be generated at the two ends of the B(Al, Ga)N electron deceleration layer, a polarized electric field with the same electron migration direction can be formed, and the migration rate of electrons entering an active region from an n-type region can be reduced, so that the electron capture efficiency of the quantum well is improved, the radiation recombination probability of the electrons and holes in the quantum well is increased, and the light emitting efficiency of the UV-LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials and device manufacturing, in particular to an ultraviolet light emitting diode (UV-LED) with an electron deceleration layer structure. Background technique [0002] At present, the luminous efficiency of AlGaN-based UV-LED devices is still very low compared with GaN-based blue LEDs, especially in the deep ultraviolet band, and the external quantum efficiency of devices is often lower than 10%. The main reasons for this phenomenon include the low internal quantum efficiency of AlGaN-based UV-LEDs and the high material defect density in AlGaN materials. Among them, the low internal quantum efficiency is mainly related to the lower electron capture efficiency and lower hole injection efficiency in the active region of the UV-LED, making it easy for electrons to escape the shackles of the quantum well and leak into the p-type region and the holes. Perform nonradiative r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/14H01L33/06
CPCH01L33/14H01L33/145H01L33/06
Inventor 张雄范艾杰胡国华崔一平
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap