539results about "Luminescent screen lamps" patented technology

Disclosed are an electron-emitting element having a large operating current at a low operating voltage and excellent operation stability, and an electron source, an image display device and the like utilizing such an electron-emitting element, and further a method of fabricating such an element with few process steps at low cost. A cold cathode member is configured utilizing hybrid particle of a first particle serving to emit electrons into the space and a second particle being in the vicinity of the first particle and serving to control the position of the first particle. In this configuration, it is preferable that the first particle have a higher electron emission efficiency than the second particle and that the second particle be conductive.

Embodiments of the invention include methods and devices for producing light by injecting electrons from field emission cathode across a gap into nanostructured semiconductor materials, electrons issue from a separate field emitter cathode and are accelerated by a voltage across a gap towards the surface of the nanostructured material that forms part of the anode. At the nanostructure material, the electrons undergo electron-hole (e-h) recombination resulting in electroluminescent (EL) emission. In a preferred embodiment lighting device, a vacuum enclosure houses a field emitter cathode. The vacuum enclosure also houses an anode that is separated by a gap from said cathode and disposed to receive electrons emitted from the cathode. The anode includes semiconductor light emitting nano structures that accept injection of electrons from the cathode and generate photons in response to the injection of electrons. External electrode contacts permit application of a voltage differential across the anode and cathode to stimulate electron emissions from the cathode and resultant photon emissions from the semiconductor light emitting nanostructures of the anode. Embodiments of the invention also include the usage of nanostructured semiconductor materials as phosphors for conventional planar LED and nanowire array light emitting diodes and CFL. For the use in conventional planar LEDs, the nanostructures may take the form of quantum dots, nanotubes, branched tree-like nanostructure, nanoflower, tetrapods, tripods, axial heterostructures nanowires hetero structures.

A field emission backlight unit for a liquid crystal display (LCD) includes: a lower substrate; first electrodes and second electrodes alternately formed in parallel lines on the lower substrate; emitters disposed on at least the first electrodes; an upper substrate spaced apart from the lower substrate by a predetermined distance such that the upper and lower substrates face each other; a third electrode formed on a bottom surface of the upper substrate; and a fluorescent layer formed on the third electrode. Since the backlight unit has a triode-type field emission structure, field emission is very stable. Since the first electrodes and the second electrodes are formed in the same plane, brightness uniformity is improved and manufacturing processes are simplified. If the emitters are disposed on both the first electrodes and the second electrodes, and a cathode voltage and a gate voltage are alternately applied to the first electrodes and second electrodes, the lifespan and brightness of the emitters can be improved. The above advantages are also achieved as a result of the method of driving the backlight unit and the method of manufacturing the lower panel thereof.

A field emission backlight device includes: a front substrate and a rear substrate arranged in parallel and spaced apart from each other by a predetermined distance; an anode and a cathode arranged opposite to each other on a respective inner surfaces of the front and rear substrates; a fluorescent layer arranged on the anode and having a predetermined thickness; a convex portion including a plurality of convex projections arranged on an outer surface of the front substrate opposite to the anode; and electron emitters arranged on the cathode to emit electrons in response to an applied field.

A double-sided light-emitting field emission device and method of manufacturing same, said device comprising at least two transparent conductive layers, mixed field emission layers, and transparent package device. Wherein, the mixed field emission layer of field emission source and phosphor are utilized directly to serve as anode and cathode alternatively, such that on applying an AC power supply, roles of anode and cathode are changed alternatively along with frequency, hereby forming double-sided light-emitting structure. Therefore, the applications of said double-sided light-emitting field emission device are pretty wide, and having advantages of protecting field emission source, activating field emission source, reducing field emission arcing effect, having conductive phosphor, and raising illumination.

An electron emission device having improved electron emission efficiency and an electron emission type backlight unit including the electron emission device in which an electric field between an anode electrode and a cathode electrode is effectively blocked, and electrons are emitted continuously and stably by a low gate voltage, thereby improving light-emitting uniformity and light-emitting efficiency. Also provided is a flat display apparatus employing the electron emission type backlight unit having the electron emission device. The electron emission device includes a base substrate; an insulating layer disposed on a surface of the base substrate; a cathode electrode formed on the insulating layer; a gate electrode that is formed on the base substrate, separated from the cathode electrode, and higher than the cathode electrode; and an electron emission layer that is electrically connected to the cathode electrode and disposed to face the gate electrode.

A field emission luminescent lamp includes a bulb (40) being vacuum sealed and defining an inner surface; a lamp head mated with the bulb; an electron emitting cathode filament (20) having a conductive wire (10) and a plurality of electron emitters (12) formed thereon, the electron emitting cathode filament is positioned in the bulb; an anode layer (44) formed on the inner surface of the bulb; a phosphor layer (42) formed on the anode layer; an anode electrode (56) located at the lamp head and electrically connected with the anode layer; and a cathode electrode (54) located at the lamp head and electrically connected with the electron emitting cathode filament. The lamp may further include a gate grid (62) and a gate electrode (54). The gate grid defines a number of grid holes and surrounds the cathode filament. The gate grid is electrically connected with the gate electrode.

The light source, comprises an evacuated container having walls, including an outer glass layer (23) which on at least part thereof is coated on the inside with a layer of phosphor (24) forming a luminescent layer and a conductive layer (25) forming an anode. The phosphor (24) is excited to luminescence by electron bombardment from a field emission cathode (40) located in the interior of the container. The field emission cathode (40) comprises a carrier having a diameter in the mm range. At least a portion of the surface of the carrier is provided with a conductive layer having surface irregularities in the form of tips, having a radial extension being less than about 10 μm. Due to the geometry and the tips, the electric field is concentrated and amplified at the field emission surface.

This invention relates to a field emission cathode and a field emission illumination device applying the cathode, in which, the cathode includes carbon nm tube wires pulled out from a carbon nm tube array and is formed by single carbon nm tube wire or multiple wires winded together or by winding single or multiple wires on a metal bar. Said device includes a cathode and an anode opposite to it and the energy conversion passes through a process of electricity-light only.

A liquid crystal display (LCD) having color filters configured according to optical characteristics of a field emission backlight. The LCD includes: a display panel having color filters including red, green, and blue filters; and a backlight device at a rear side of the display panel and including a vacuum panel with a cold cathode electron source and a phosphor layer that is excited by electrons emitted from the cold cathode electron source to emit visible light. Here, a wavelength position corresponding to a half of a peak intensity of a transmission spectrum of the red filter is at from about 570 nm to about 622 nm, a wavelength position corresponding to a half of a peak intensity of a transmission spectrum of the blue filter is not greater than 520 nm, and/or a transmission spectrum of the green filter has a full width at half maximum (FWHM) ranging from about 60 nm to about 115 nm.

A CNT field emitting light source (20) is provided. The light source includes an anode (202), an anode substrate (201), a cathode (214), a cathode substrate (208), a fluorescent layer (203) and a sealing means (205). The anode is configured on the anode substrate, and the cathode is configured on the cathode substrate. The anode and the cathode are oppositely configured to produce a spatial electrical field when a voltage is applied therebetween. The cathode includes an emitter layer (206), capable of emitting electrodes bombarding the cathode and matters attached thereupon when activated and controlled by the spatial electric field, and a conductive layer (207), sandwiched between the cathode substrate and the emitter layer for providing an electrically connection therebetween. The fluorescent layer is configured on a surface of the anode oppositely facing the emitter layer, so as to produce fluorescence when bombarded by electrodes emitted from the emitter layer.

A field emission type backlight device can include upper and lower substrates facing each other with a gap between them, an anode electrode on a lower side of the upper substrate, a fluorescent layer on a lower side of the anode electrode, a lower gate electrode on an upper side of the lower substrate, an insulating layer on an upper side of the lower gate electrode, a cathode electrode on an upper side of the insulating layer, and a gate electrode that is provided on an upper side of the insulating layer and electrically connected to the lower gate electrode.

The present invention provides devices comprising an assembly of carbon nanotubes, and related methods. In some cases, the carbon nanotubes may have enhanced alignment. Devices of the invention may comprise features and/or components which may enhance the emission of electrons and may lower the operating voltage of the devices. Using methods described herein, carbon nanotube assemblies may be manufactured rapidly, at low cost, and over a large surface area. Such devices may be useful in display applications such as field emission devices, or other applications requiring high image quality, low power consumption, and stability over a wide to temperature range.

A display apparatus includes a top substrate, a middle substrate, and a bottom substrate. The top substrate includes a first substrate. The middle substrate includes a second substrate, an anode electrode and a fluorescent layer. The second substrate includes an upper surface facing the first substrate and a lower surface that is opposite to the upper surface. An array layer is formed on either the upper surface of the second substrate or a lower surface of the first substrate. The anode electrode is formed on the lower surface of the second substrate. The fluorescent layer is formed on the anode electrode. The bottom substrate includes a third substrate and a cathode electrode formed on the third substrate such that the cathode electrode faces the fluorescent layer. Therefore, a thickness may be reduced and luminance of a light may be enhanced.

This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

A liquid crystal display includes a liquid crystal display front end component joined to a field emission device backlighting unit. The field emission device backlighting unit has a cathode and an anode. The cathode is provided with a plurality of emitter cells. The anode is provided with a screen structure having a plurality of phosphor elements that are each formed as a substantially continuous stripe. Each of the phosphor elements has a plurality of the emitter cells aligned therewith.

A backlight device (100) includes a light source (110) and a light guiding plate (120). The light source includes a cathode (111); a nucleation layer (112) formed on the cathode; a field emission portion (102) formed on the nucleation layer; and a light-permeable anode (117) arranged over the cathode. The field emission portion includes an isolating layer (113) formed on the cathode; a plurality of isolating posts (114) disposed on the isolating layer; and a plurality of field emitters (115) located on the respective isolating posts. The light guiding plate includes an incident surface (121) facing the light-permeable anode and adapted for receiving light emitted from the light source.

A high-efficiency electron-emitting device that can emit electron with higher luminance at a voltage lower than conventional electron-emitting devices, as a key device of a flat panel display, image pickup device, electron beam device, microwave traveling-wave tube is provided to improve the carrier injection efficiency and enhance luminance of an organic light-emitting device. A film having space charge with a thickness of 50 nm or less is formed on a surface of a conductive material on which irregularities, amorphous or fibrous materials are formed. The film includes compounds of group 3 atoms such as aluminum nitride, boron nitride, aluminum nitride boron, aluminum nitride gallium, boron nitride gallium and nitrogen atoms, and nitride, carbon, silicon, oxygen and boron such as oxides including nitrogen boron carbon, boron carbide, carbon nitride, boron.

In a field emission backlight unit, a method of driving the same, and a method of manufacturing a lower substrate, the field emission backlight unit includes: a lower substrate; first and second electrodes alternately formed in parallel lines on the lower substrate; emitters interposed between the lower substrate and the first electrodes; an upper substrate spaced a predetermined distance from the lower substrate and facing the lower substrate; a third electrode formed on a bottom surface of the upper substrate; and a phosphor layer formed on the third electrode. The driving method comprises applying a cathode voltage to the first electrodes and a gate voltage to the second electrodes, followed by reversing the application of the voltages to the first and second electrodes. The manufacturing method comprises forming and drying or firing a patterned carbon nanotube (CNT) layer, and then pattering, drying and firing a conductive thick film.

A field emission device and a backlight device using the field emission device includes a cathode electrode and a gate electrode formed in alternating parallel strips on a substrate, a catalytic metal layer arranged on the cathode electrode and adapted to enhance Carbon NanoTube (CNT) growth, and grown CNTs arranged on the catalytic metal layer.

A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (˜1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (˜100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.