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Method for preparing fluorine doped tin oxide transparent conductive film

A fluorine-doped tin oxide, transparent conductive film technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of high temperature of film deposition substrate, inability to prepare thin film, etc., to achieve electrical conductivity And the effect of high optical transmittance, no pollution to the environment, and low cost

Inactive Publication Date: 2010-02-03
LUDONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SnO 2 : The substrate of the F film is hard glass, and the temperature of the film deposition substrate is relatively high, so the film cannot be prepared on the organic flexible substrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) SnO with a purity of 99.99% 2 Powder and 99% SnF 2 The powder is fully mixed according to the weight ratio of 90:10, and pressed at a pressure of 200MPa and a temperature of 120°C for 25 minutes; sintered at a temperature of 200°C in air for 3000 minutes to produce SnO 2 : F target.

[0020] (2) The organic flexible substrate is a transparent polyester film with a thickness of 125 μm, which is cleaned by ultrasonic chemistry. Send the target material in step (1) and the cleaned organic flexible substrate into a radio frequency magnetron sputtering apparatus, and the distance from the target material to the substrate is 60 mm. Sputtering chamber basic vacuum 4.0×10 -4 Pa, sputtering gas argon pressure 1Pa, sputtering bias -70V, sputtering power 150W, substrate temperature at room temperature, film thickness 400nm. The film has a polycrystalline structure, and the resistivity of the film is 5×10 -4 Ωcm, the optical transmittance in the visible light range exceeds...

Embodiment 2

[0022] The target for sputtering is the same as in Example 1, except that in step (2), the organic flexible substrate adopts a transparent polycarbonate film with a thickness of 175 μm, the distance from the target to the substrate is 40 mm, and the basic vacuum of the sputtering chamber is 9× 10 -4 Pa, the argon pressure of the sputtering gas is 0.3Pa, the sputtering bias is 0V, the sputtering power is 50W, the substrate temperature is room temperature, and the film thickness is 400nm. The film has a polycrystalline structure, and the resistivity of the film is 7×10 -3 Ωcm, the optical transmittance in the visible light range exceeds 72%.

Embodiment 3

[0024] The target for sputtering is the same as in Example 1, except that in step (2), the organic flexible substrate adopts a transparent polyimide film with a thickness of 75 μm, the distance from the target to the substrate is 80 mm, and the basic vacuum of the sputtering chamber is 2 ×10 -4 Pa, the argon pressure of the sputtering gas is 5Pa, the sputtering bias is -100V, the sputtering power is 200W, the substrate temperature is room temperature, and the film thickness is 400nm. The film has a polycrystalline structure, and the resistivity of the film is 7×10 -4 Ωcm, the optical transmittance in the visible light range exceeds 88%.

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Abstract

The invention discloses a method for preparing an SnO2:F transparent conductive film by a bias radio-frequency magnetron sputtering method, belonging to the technical field of electronic materials. The method comprises the following steps: fully mixing SnO2 powder with purity of 99.99% and SnF2 powder with purity of 99% according to a weight ratio of 95:5-85:15, after press forming, sintering themixture in air at a temperature of 190-210 DEG C to prepare an SnO2:F target; sending the target and a washed organic flexible base material into a radio-frequency magnetron sputtering instrument andpreparing the SnO2:F transparent conductive film on the substrate of the organic flexible base material by the bias radio-frequency magnetron sputtering technology at room temperature. The target is 40-80mm away from the substrate in the sputtering instrument; the basic vacuum degree of a sputtering chamber is less than 1.0*10<-3>Pa; the pressure of sputtering gas-argon is 0.3-5Pa; the sputteringbias ranges from minus 100V to 0V and the sputtering power is 50-200W. The invention has the advantages that the substrate dispenses with heating, the preparation process is simple, the cost is low, and the photoelectric performance and the stability are good.

Description

(1) Technical field: [0001] The invention relates to a preparation method of a fluorine-doped tin oxide transparent conductive film, which belongs to the technical field of electronic materials. (two) background technology: [0002] Transparent conductive films have both low resistance and high visible light transmittance characteristics, and are widely used in transparent electrodes of thin-film solar cells, flat panel displays and light-emitting devices. In recent years, the rise in the price of crystalline silicon has greatly promoted the development of thin-film solar cells. The transparent conductive film used in photovoltaics is a necessary component of the front electrode of the battery, and its market demand is growing rapidly. Tin-doped indium oxide (ITO) thin film is currently the most widely used transparent conductive film, mainly used in flat panel display and other fields, and was initially used in the front electrode of photovoltaic cells. In order to increas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 闫金良赵银女石亮刘建军李厅
Owner LUDONG UNIVERSITY
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