Two-dimensional stratified material based SOI (Semicon-on-insulator) base micro loop filter

Abstract

The invention discloses a two-dimensional stratified material based SOI (Semicon-on-insulator) base micro loop filter. The two-dimensional stratified material based SOI base micro loop filter comprises an SOI substrate which is formed by a buried oxide layer and top silicon; an SOI micro loop resonant cavity, input straight waveguide and output straight waveguide are arranged on the top silicon and the input straight waveguide and output straight waveguide are arranged on the upper side and the lower side of the SOI micro loop resonant cavity, so that the SOI waveguide structure is formed; two-dimensional stratified materials cover the SOI waveguide structure; two ends of the input straight waveguide are provided with input end optical grating and direct connection optical grating; one end of the output straight waveguide is provided with output end optical grating; areas of the SOI micro loop resonant cavity, which are close to the input straight waveguide and the output straight waveguide, form into a first coupling area and a second coupling area. Compared with the traditional technology, the two-dimensional stratified material based SOI base micro loop filter has the advantages of being narrow in 3dB band width, high in extinction ratio, less in noise, compatible with CMOS technology and widely applied to the on-chip optical interconnection network in the future due to the fact that the SOI base filter is further filtered due to the saturated absorption effect of two-dimensional stratified materials.

Description

technical field [0001] The invention relates to silicon-based optoelectronics and chip-level optical interconnection technology, in particular to a silicon-on-insulator (SOI)-based signal filter device based on the saturable absorption effect of a two-dimensional layered material. [0002] Background technique [0003] In the past half century, with the development of integrated circuits, the device technology of silicon-based materials has been very mature, and with the continuous reduction of process size, the integration of integrated circuits has been developing rapidly according to Moore's law. The higher integration of chips brings not only an increase in the number of transistors, but also an increase in chip functions and processing speed. However, as feature sizes shrink and integration levels continue to increase, the limitations of microelectronics processes are becoming increasingly apparent. On the one hand, due to the continuous reduction of device line width...

AI Technical Summary

Problems solved by technology

The traditional SOI-based microring filter only improves the performance of the filter by changing the size of the microring or changing the waveguide structure, but there is no way to change some essential problems, such as the noise in the microring filter cannot be handled well, In order to improve the 3dB bandwidth, it is necessary to change the structure of the filter, which is a big challenge for the process

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