667 results about "Metal metal" patented technology

A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a π complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.

The invention is to a dual beam process for providing an ion-conducting membrane with a thin metal or metal-oxide film. The process includes the cleaning of a membrane surface with a low energy electron beam followed by the deposition of the metal or metal-oxide film by a high energy electron beam of ions.

Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for One-Time Programmable (OTP) devices, such as electrical fuse, contact/via fuse, contact/via anti-fuse, or gate-oxide breakdown anti-fuse, etc. The OTP device has at least one OTP element coupled to at least one diode in a memory cell. The diode can be constructed by P+ and N+ active regions in a CMOS N well, or on an isolated active region as the P and N terminals of the diode. The isolation between P+ and the N+ active regions of the diode in a cell or between cells can be provided by dummy MOS gate, SBL, or STI/LOCOS isolations. The OTP element can be polysilicon, silicided polysilicon, silicide, metal, metal alloy, local interconnect, thermally isolated active region, CMOS gate, or combination thereof.

The present invention is directed to photostable sunscreen and/or artificial tanning compositions including quantum dot nanocrystals of a material selected from semiconductor nanocrystals, modified semiconductor nanocrystals, multicomponent semiconductor/semiconductor nanocrystals, and hybrid semiconductor/metal nanocrystals, the quantum dot nanocrystals having an absorption band gap occurring at wavelengths higher than 400 nm whereby the quantum dot nanocrystals have substantial broadband absorption properties of ultraviolet light at wavelengths across the range of both UV-A (320-400 nm) and UV-B (280-320 nm), and a dermatologically acceptable carrier for the quantum dot nanocrystals. The present invention is further directed to photostable sunscreen and/or artificial tanning compositions including a material selected from metallic nanocrystals, multicomponent metal/metal nanocrystals, and alloyed metal nanocrystals, the metallic material having a surface plasmon resonance occurring sufficiently into the visible or infrared spectral region whereby broad absorption features due to electronic transitions, the broad absorption features located at higher energies, provide substantial broadband absorption properties of ultraviolet light at wavelengths across the range of both UV-A (320-400 nm) and UV-B (280-320 nm), and a dermatologically acceptable carrier for the metallic material.

The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

An integrated metal detector-portable medical device adapted to identify metals in a human body, where the metal detector is in connection with the portable medical device. The metal detector includes: at least one transmitting means adapted to generate a second magnetic field so as to induce a magnetic field generated by a metal; at least one sensor adapted to detect a magnetic field generated by the metals to be detected; and at least one signaling means adapted, upon detection of a magnetic field, to alert the identification of metals, if the intensity of a magnetic field is above a predetermined value.

An improved process for producing very high quality base stock and for simultaneous production of high quality middle distallates, comprising successive hydroisomerisation and catalystic dewaxing steps wherein hydroisomerisation is carried out in the presence of a catalyst containing at least one noble metal deposited on an amorphous acidic support, the dispersion of the metal being less than 20%. The support is preferably an amorphous silica-alumina. Catalytic dewaxing is carried out in the presence of a catalyst containing at least one hydrodehydrogenating element (group VIII) and at least one molecular sieve (preferably zeolite). The sieve is preferable selected from NU-10, EU-1, EU-13, zeolite and ferrierite.

A MEMS fabrication process eliminates through-wafer etching, minimizes the thickness of silicon device layers and the required etch times, provides exceptionally precise layer to layer alignment, does not require a wet etch to release the moveable device structure, employs a supporting substrate having no device features on one side, and utilizes low-temperature metal-metal bonding which is relatively insensitive to environmental particulates. This process provided almost 100% yield of scanning micromirror devices exhibiting scanning over a 12° optical range and a mechanical angle of ^±3° at a high resonant frequency of 2.5 kHz with an operating voltage of only 20 VDC.

Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for One-Time Programmable (OTP) devices, such as electrical fuse, contact/via fuse, contact/via anti-fuse, or gate-oxide breakdown anti-fuse, etc. The OTP device has at least one OTP element coupled to at least one diode in a memory cell. The diode can be constructed by P+ and N+ active regions in a CMOS N well, or on an isolated active region as the P and N terminals of the diode. The isolation between P+ and the N+ active regions of the diode in a cell or between cells can be provided by dummy MOS gate, SBL, or STI/LOCOS isolations. The OTP cell can have a MOS in series with the OTP element as a read selector. The OTP element can be polysilicon, silicided polysilicon, silicide, polymetal, metal-0, metal, metal alloy, local interconnect, thermally isolated active region, CMOS gate, or combination thereof.

A fitting for an end of a length of corrugated tubing has a split retainer that grips the tubing corrugations, and is engaged between a fitting body and a nut. Upon tightening the nut on the fitting body, the endmost corrugation is compressed between the retainer and a sealing seat on the fitting body arranged to provide a narrow metal-metal sealing junction and also a gasket seal. The fitting body has an inwardly tapered conical surface with a circular outer radius surrounded by an annular groove, thus forming a sealing edge, and the annular groove carries a gasket. The conical surface is dimensioned so that the sealing edge falls between the maximum and minimum diameters of the endmost corrugation. As the fitting is tightened, the endmost corrugation is collapsed between the sealing edge and the retainer, providing a metal/metal clamped sealing junction. The outer diameter part of the endmost corrugation is wrapped into a bead or torus that compresses the gasket, forming a metal/gasket additional seal.

The invention discloses a Janus particle with double properties and a preparation method thereof. By employing cross-linked polymer colloidal particles as seeds and through a seed emulsion polymerization method, Janus particles with double properties are obtained on the basis of a phase separation mechanism; inorganic, metal and metal oxide compounded Janus particles with electrical, magnetic, optical properties are obtained through functional group modification and composition of function materials and can be used for the material field. The Janus particles have an emulsifying property in organic, inorganic dispersed phases or different organic dispersed phases and meanwhile the Janus particles have a great application prospect in the aspects of self-assembly, superhydrophobicity, nanomotor and the like. The preparation method provided by the invention is easy to operate, has the feasibility of mass production and can adapt to different needs by modification and composition of function materials.

An annular metal-to-metal sealing system, for use in wellhead systems and having many other uses, has a metal member defining an annular internal or external sealing surface for which sealing is intended. An annular seal body composed of high strength metal material is positioned in concentric relation with the annular sealing surface and is sufficient flexible to become spring loaded, typically during assembly, for continuous application of a spring force. The annular seal body defines one or more annular seal retainer grooves each having an annular soft metal sealing insert therein, with a portion thereof exposed for sealing engagement with the annular sealing surface. The spring loaded characteristic of the annular seal body applies constant force to maintain the soft metal seal insert in constantly energized sealing relation with the annular sealing surface and maintains effective sealing even when dimensional changes to the sealing surface occur due to temperature or pressure changes.

In one embodiment, the invention provides a positive electrode protective material of a lithium sulfur battery. The material includes a nano-porous carbon network and inorganic nano-particles uniformly distributed therein. Distance of any two adjacent inorganic nano-particles is 3-50 nm. The inorganic nano-particles are metal compound nano-particles or metal-metal compound composite nano-particles. The nano-porous carbon network and the inorganic nano-particles can form an integrated three-dimensional nano-porous composite network. The positive electrode protective material has physical and chemical dual-adsorption effect and can constrain lithium polysulfide to nearby the positive electrode, thus effectively inhibiting loss of a positive active material in the lithium sulfur battery. Meanwhile, the material can accelerate conversion from soluble lithium polysulfide to indissolvable Li2S2 or Li2S, thus greatly improving energy conversion efficiency and rate capability of the lithium sulfur battery and achieving excellent cycle performance under high energy density. The invention also provides a practical application of the positive electrode protective material in the lithium sulfur battery.

Embodiments of the present invention provide staggered guard ring structures for stopping cracks from propagating during a dicing operation or by suffering mechanical stress after packaging. In one embodiment, a guard ring structure may comprise staggered metal bars, each of which extends into the ILD underneath it. In one embodiment, the extended portion of a metal bar may overlap a portion of another metal bar underneath it. In one embodiment, the bottom portion of a metal bar extends into the underlying substrate. In all embodiments of the invention, the metal-metal interfaces and the ILD-ILD interfaces do not lie on the same plane, effectively stopping cracks from propagating into the active circuit area through delaminated interfaces.

The invention relates to a lithium-sulfur battery based on a functional carbon fiber cloth as a positive electrode barrier layer, and belongs to the field of electrochemical batteries. The lithium-sulfur battery based on a functional carbon fiber cloth as a positive electrode barrier layer comprises a sulfur-containing active material positive electrode, a diaphragm, an electrolyte, a metal lithium negative electrode and a foam nickel current collector, and a barrier layer is arranged between the sulfur-containing active material positive electrode and the diaphragm; and the barrier layer is obtained through compounding one or more of metal oxide, metal, metal alloy or metal hydroxide on the surface of the carbon fiber cloth. The above functional substance having catalysis activity and adsorption ability or capable of improving the electrochemical functions of the battery is introduced with the help of the good conductive performance and the three dimensional structure of the carbon fiber cloth, so polysulfide can be effectively intercepted and adsorbed, a shuttle effect is inhibited, and the practical specific capacity and the cycle performances of the lithium-sulfur battery are substantially improved.

For producing very high quality base stock and for simultaneously producing high quality middle distillates, successive hydroisomerisation and catalytic dewaxmg steps are employed wherein the hydroisomerisation is carried out in the presence of a catalyst containing at least one noble metal deposited on an amorphous acidic support, the dispersion of the metal being 20%-100%. The support is preferably an amorphous silica-alumina. Catalytic dewaxing is carried out in the presence of a catalyst containing at least one hydrodehydrogenating element (group VIII) and at least one molecular sieve selected from ZBM-30, EU-2 and EU-11.

A crossed-slot antenna is fabricated using rectangular sheet of metal. A crossed-slot is etched or stamped in the sheet of metal. A feed structure is similarly formed in the sheet of metal. Sidewalls are integrally formed with the sheet of metal and are bent to form a rectangular box. A circuit board is attached to the rectangular box. An air-filled cavity is defined by the sheet of metal, the sidewalls, and the circuit board. Alternatively, a crossed-slot antenna with a solid cavity is fabricated using a sheet of plastic. Ridges are formed in a cross pattern on the sheet of plastic. The sheet of plastic is plated with metal. The metal is removed from a surface of the sheet of plastic, exposing the ridges.

A method for deposition of a metal layer onto plastic materials is disclosed. The method allows for formation of long length strain gauges and deposition of high melting temperature metals onto plastic materials. The method comprises initially depositing a pattern of powder particles onto the plastic material using a kinetic spray process. Then the high melting temperature metal layer is deposited using a thermal spray process. The metal layer only adheres to the pattern of the powder particles and not to the plastic substrate. To form a stain gauge the powder particles are deposited in a discontinuous non-electrically conductive density on the plastic material. Then a metal layer is deposited using a thermal spray process and a metal having a variable resistance. The metal forms a continuous and electrically conductive pathway having a resistance that changes as stress is applied to the substrate.

A method of producing a metal seal ring is provided. The method includes selecting a seal ring substrate material and applying a coating to the seal ring substrate material using an electroless plating process.

The invention discloses a method for processing copper anode slime in a total wet manner, relating to a total wet production process for recycling rare and precious metals from the copper anode slime in nonferrous metallurgy. The method comprises the steps of pressurizing the copper anode slime by a chloride medium at a high temperature and leaching to directly separate out valuable metals such as copper, stibium, bismuth, tellurium, and tin; and recycling tellurium, stibium, tin, bismuth, copper and the like from a pressurized lixivium in stages. The method is further characterized in that a selective extraction method is adopted to separate gold in a gold selenium chloride solution and the selenium is recycled from a gold raffinate. According to the method, the sulfating roasting with serious pollution and huge investment is avoided, but the sulfating roasting is carried out firstly for the copper anode slime in the conventional wet method or (pyrometallurgical process); the separation recovery rate of the metals is high, but the separation effect of tellurium, stibium, tin and bismuth in the conventional process is far from ideal; by adopting the method, the leaching problems of above metals can be solved in a single process and above metals can be recycled respectively from the lixivium; the recovery rate of the metals is 90-99% respectively; the copper separation and the tellurium separation can be simplified; and the operation flow is optimized in a better manner.

Disclosed are: a sealing film which is produced using, as a base material, a polyester film which is inexpensive and has excellent mechanical properties and processability, can prevent the deterioration of a gas-barrier property under long-term use (which is a problem in the prior art) and has excellent long-term reliability; and a solar cell module using the sealing film. Specifically, disclosed are: a sealing film which has hydrolysis resistance, transparency, and weather resistance and is reduced in weight; and a solar cell module using the sealing film. The sealing film comprises: a polyester film layer having heat contraction coefficients of +/- 2% or less at 150 DEG C both in the length-wise and width-wise directions and a difference between a heat contraction coefficient in the length-wise direction and that in the width-wise direction of 2% or less at 150 DEG ; and a layer comprising at least one substance selected from the group consisting of a metal, a metal oxide and an inorganic compound. The solar cell module has the sealing film as a front sheet layer and/or a back sheet layer thereof.

A semiconductor chip capable of implementing wire bonding over active circuits (BOAC) is provided. The semiconductor chip includes a bonding pad structure, a metal-metal capacitor formed by at least a pair of metal electrodes on the same plane underneath the bonding pad structure, at least an interconnection metal layer, at least a via plug between the interconnection metal layer and the bonding pad structure, and an active circuit situated underneath the bonding pad structure on a semiconductor bottom.

An additive composition and lubricating fluid are disclosed that provide high steel-on-paper friction durability, good metal-metal extreme pressure performance characteristics and synchronizer performance. The lubricating fluid includes a base oil, a succinimide dispersant, a succinimide friction modifier, and a phosphonate. Also disclosed is a method for lubricating a dual clutch transmission employing a plurality of wet clutches, with the lubricating fluid of the disclosure.

Metal-metal or metal-ceramic/carbide composite materials are fabricated by combination of powder injection molding and infiltration. This is achieved by first forming a composite system having a matrix component and an infiltrant layer. The matrix component is formed from a metal or ceramic/carbide powder, that is of a higher melting point, admixed with a first binder. The infiltrant layer is formed from a metal powder, that is of a lower melting point, admixed with a second binder. The first and second binders are subsequently removed from the composite system during a debinding process. The composite system is then heated in a sintering furnace to coalesce the matrix component into a matrix phase having a network of interconnected pores, and to effect infiltration of the infiltrant layer into these pores to form the composite material of the present invention.