353 results about "Metal metal" patented technology

Improved performance ion exchange membranes for use in REM, AEM and DMFC fuel cells, buffered fuel cells, hydrolysis, other applications comprise a molecular matrix of homopolymers, di-monomer, heteropolymers, copolymers, or block-polymers of fluorocarbon and hydrocarbon compounds combined with (i) skeletal support grid to improve durability, handling, reduce membrane swelling, and sequester dopants and nanoparticles from leakage; (ii) microporous membrane formed using a sacrificial filler process enhancing conductivity and limiting fuel crossover; (iii) hetero-ionomeric matrix of two-or-more membrane-bound acids e.g. sulphonic and phosphonic acid expanding usable range; (iv) permanent fillers enhancing conductivity and porosity including nanoparticles, metal-oxides, zeolites, silicates, GOs, CNTs, MOFs, POSS, and others; (v) ionic liquid doping to enhance membrane conductivity; (vi) membrane nanocoating preventing H2O2 diffusion; and / or (vii) catalytic nanocoating with metals, metal-oxides, and MOFs preventing atmospheric toxin catalyst poisoning. Combined with a heterogenous GDI, the IEM is integrated into iBFC power blade and energy bank applications.

A bonded assembly includes a first semiconductor die containing first semiconductor devices and a first bonding pad embedded within a first silicon oxide layer, where the first bonding pad includes a first copper containing portion, a second semiconductor die containing second semiconductor devices and a second bonding pad that is embedded within a second silicon oxide layer and is bonded to the first bonding pad via metal-to-metal bonding, where the second bonding pad includes a second copper containing portion, and at least one metal silicon oxide layer interposed between the first bonding pad and the second silicon oxide layer. In one embodiment, the at least one metal silicon oxide layer is a manganese silicon oxide layer.

A process for preparing a mixed-metal metal-organic framework. The process comprises providing a hydrogen bonded metal organic framework (HM1OF); soaking the hydrogen bonded metal organic framework (HM1OF) in a metal (M2)-comprising solution; and forming a mixed-metal MOF (M1OF-M2), where M1 and M2 are different metals.

Provided herein are methods of purifying graphite comprising: electrochemically treating graphite comprising an impurity selected from the group consisting of metals, metal oxides, and combinations thereof in the presence of an electrolyte; a portion of the impurities is removed by electrochemical treatment and purified graphite is provided. Also provided are purified graphite provided by such a method, as well as a negative electrode and a battery each comprising the purified graphite.

The invention belongs to the field of MEMS sensors, and discloses a high-temperature-resistant MEMS pressure sensor chip and a packaging structure thereof. The chip is provided with an SOI substrate, an AlN layer and a SiO2 layer from bottom to top, a plurality of P-type piezoresistors are arranged on the uppermost layer of the SOI substrate and are symmetrically distributed at the stress concentration position of the edge of the elastic diaphragm; a channel which continuously penetrates through the AlN layer and the SiO2 layer is arranged above the P-type piezoresistor; a metal Pad is arranged in the channel; the upper end of the metal Pad is located on the uppermost layer of the high-temperature-resistant MEMS pressure sensor chip, and the lower end of the metal Pad is in contact with the P-type piezoresistor. According to the invention, the relatively thick buried oxide layer can resist a high-temperature severe environment, and an AlN heat dissipation material with a high heat conductivity coefficient is deposited, so that rapid heat dissipation at a high temperature is ensured; and meanwhile, the stability and the reliability of the sensor are improved by adopting leadless packaging, and the packaging density is further optimized.

The invention relates to the technical field of wastewater treatment, and discloses an electrochemical device and a treatment method of high-concentration organic wastewater. The electrochemical device includes a reaction vessel, and an anode, a cathode, and a particle electrode disposed within the reaction vessel, at least one of the anode and the cathode including a first electrode layer, a second electrode layer, and a metal layer disposed between the first electrode layer and the second electrode layer. Wherein the metal layer contains a metal and b metal, the a metal is copper, and the b metal is selected from at least one of iron, nickel and zinc. When the electrochemical device is used for treating high-concentration organic wastewater, the ammonia nitrogen content and the COD content of effluent can be effectively reduced.

A vacuum induction melting (VIM) furnace and method of using. A VIM is configured for use with metal-containing carbon powders. In operation, the metal-containing carbon powders are formed into a pellet so as to minimize or eliminate ejection of material during introduction of the pellet into the VIM processor. The VIM processor may be substituted or used in combination with a vacuum arc melt processing apparatus, an electron beam melt furnace, an ion plating furnace, a plasma flame source, a smelter, a traditional metal-metal melt furnace, or any equivalent. Pelletizing can be accomplished through use of a press or through application of any pelletizing technique and / or use of any apparatus that is able to generate pellets that have sufficient mass to avoid ejection from a VIM processor.

A semiconductor device includes; a substrate including an active pattern, a channel pattern and a source / drain pattern on the active pattern, wherein the channel pattern is connected to the source / drain pattern, a gate electrode on the channel pattern, and a gate contact connected to a top surface of the gate electrode, wherein the gate contact includes a capping layer directly contacting the top surface of the gate electrode and a metal layer on the capping layer, wherein the capping layer and the metal layer include the same metal, a concentration of oxygen in the metal layer ranges from between about 2 at % to about 10 at %, and a maximum concentration of oxygen in the capping layer ranges from between about 15 at % to about 30 at %.

The invention discloses a metal-intermetallic compound composite material with a brick mud structure and a preparation method, and belongs to the field of bionic composite materials. According to the method, metal foil and Al foil are subjected to surface pretreatment and then subjected to ultrasonic cleaning, the metal foil and the Al foil are stacked according to the mode that the metal foil and the Al foil serve as units, a vacuum hot pressing sintering device is used for pre-sintering the metal foil and the Al foil to obtain a metal-intermetallic compound layered composite material, then the metal-intermetallic compound layered composite material is cut into a specific size and subjected to secondary sintering in a mold, and a high-temperature and high-pressure method is adopted for secondary sintering. The invention aims to obtain the brick mud structure metal-intermetallic compound layered composite material with a compact structure. Wherein the intermetallic compound serves as a'brick 'and is uniformly distributed in the metal, the metal serves as a'mud' and serves as an integral tissue framework, the material is closer to a natural shell structure in structure, and the mechanical property of the material is far better than that of a traditional composite material of a layered structure. According to the method, the comprehensive mechanical property of the traditional layered composite material can be effectively improved.

The present invention discloses a non-thermal plasma treatment of metal powders in order to improve their processability by additive manufacturing (AM). The invention consists in bonding primary particles constituted of metals or metal alloys to a plurality of secondary particles constituted of metals, metal alloys, ceramics or polymers by the mean of a non-thermal plasma treatment. The primary particles have a larger mean diameter than the secondary. Both particles are injected through a non-thermal plasma glow discharge and / or in its afterglow region (region downstream the plasma discharge) where their surfaces are cleaned by removing contaminants and / or oxide layer and activated to react between each other. The functionalized metal powders are then collected and afterwards processed by AM leading to high quality parts. The functionalized metal powders produced by this plasma treatment improve the processability of metal by AM.

A 3D semiconductor device, the device including: a first level including first single crystal transistors; a second level including second transistors; memory periphery circuits; and memory cells, where the first level is overlaid by the second level, where the first level includes a transferred layer and a bonded layer, where the second level is bonded to the first level, where the bonded second level includes oxide to oxide bonds, where the bonded second level includes metal to metal bonds, where the first level includes a preponderance of the memory periphery circuits, where the second level includes a preponderance of the memory cells, where the preponderance of the memory periphery circuits are connected to the preponderance of the memory cells using a portion of the metal to metal bonds, and where the memory periphery circuits include at least one Look up Table (“LUT”) circuit.

A package includes an interposer having a first redistribution structure; a first die directly bonded to a first surface of the first redistribution structure with a dielectric-to-dielectric bond and a metal-to-metal bond; a second die directly bonded to the first surface of the first redistribution structure with a dielectric-to-dielectric bond and a metal-to-metal bond; an encapsulant around the first die and the second die; and a plurality of conductive connectors on a second side of the first redistribution structure opposite to the first die and the second die.

The invention relates to the technical field of micro-nano additive manufacturing and electronic manufacturing, in particular to a non-deployable curved surface micro conformal circuit additive manufacturing method based on electric field driving. A circuit pattern mask is needed at any non-deployable three-dimensional curved surface conformal manufacturing position, and an imprinting working soft mold consistent with the female mold plate in structure is prepared through secondary mold turning; secondly, conformal imprinting and shape restoring are carried out, and a groove structure consistent with the geometric pattern of the circuit is obtained on the curved-surface base material in the modes of etching, roughening treatment and the like; then, the groove is filled with a seed layer, and the groove is filled with high-conductivity metal through the electroplating technology; afterwards, dissimilar metal in the groove is molten and strengthened through laser, after the metal is cooled, the metal and the coarsened microstructure in the groove form an interlocking structure, and the binding force between the metal layer and the base material is greatly enhanced; and finally, performing post-treatment on the surface of the sample piece through processes such as polishing and the like to obtain the final curved surface conformal circuit with the embedded conductive circuit.

Optoelectronic structures and methods of formation are described. In one embodiment, an optoelectronic structure includes a backplane having a driver circuit and an array of contact pads, and a device layer bonded to the backplane. The device layer may include an array of micro-diodes and landing pads and a reconfiguration wiring layer including an array of via contacts connected to the array of landing pads. The reconstitution wiring layer can be directly bonded to the array of contacts by metal-metal bonds. The placement profile of the landing array can be decoupled from the position profile of the via contact array.

The invention relates to the technical field of threaded connection of oil casings, in particular to a basically flush type coupling-free air-tight seal oil casing joint assembly which comprises an external thread joint and an internal thread joint, and after the external thread joint and the internal thread joint are screwed together, the external thread joint and the internal thread joint are screwed together. An outer metal sealing structure, an outer elastic sealing structure, meshing threads, an inner elastic sealing structure, an inner metal sealing structure, a torque shoulder and the like are sequentially formed. Through the cooperation of the external thread connector, the internal thread connector, the external metal sealing structure, the external elastic sealing structure, the meshing thread and the internal metal sealing structure, the connecting and sealing functions are provided, the connector is basically flush with the pipe body, the oil casing can enter a well easily, the well cementation gap is large, and the connector connecting efficiency can reach 65%-70%; and 2) the inner and outer seals are both metal / metal seal and elastic seal, and the double-seal structure greatly improves the sealing effect, and is suitable for ultra-deep wells and high-pressure natural gas wells with harsh conditions.

The invention relates to the technical field of photocatalytic hydrogen production, and provides a TNM-Fe-Co II type heterojunction catalyst as well as a preparation method and application thereof in photocatalytic hydrogen production. The TNM-Fe-xCo photocatalytic material is prepared through ion doping and TiO2 compounding strategies: firstly, through a metal ion co-doping strategy, Co < 2 + > is introduced into an NH2-MIL-Fe skeleton to construct a bimetallic active center, so that not only is an additional active site provided, but also compounding of photo-induced carriers is inhibited through a unique metal-metal charge transition (MMCT) process, and the photocatalytic performance of the photocatalytic material is improved; therefore, the photocatalytic performance is improved; tiO2 is further compounded, and the separation of photon-generated carriers is enhanced through the construction of heterojunction, so that the photocatalytic activity is improved. The composite material has excellent hydrogen production performance under the condition of no noble metal auxiliary agent, shows excellent performance and wide application prospect of the composite material in the field of photocatalysis, and provides a new design strategy for development of high-performance photocatalysts.

Forming planar resistive memory devices on metal vias that are planed level with the surrounding insulating material may transfer dishing or other surface imperfections in the surface of the metal vias throughout the layers of the memory cell and degrade the performance of the device. A bottom electrode having a "hammerhead" shape may be formed by leaving a top portion of the metal layer over the insulating layer instead of polishing down to the insulating layer. The top portion of the electrode may be oxidized to form the switching layer for the memory cell itself. This hammerhead electrode may have a substantially flat surface on which to form the layers of the planar memory cell, resulting in better memory performance and heat dissipation. When oxidized, the hammerhead electrode also eliminates the metal / metal-oxide interface between the bottom electrode and the switching material.

The utility model discloses a pallet fork, relates to the technical field of pallet forks, and aims to solve the problems that in the prior art, a common pallet fork is generally made of metal, and a metal pallet fork collides and rubs with other metal pieces to easily generate sparks and is not suitable for flammable and explosive scenes. A buffer is fixedly connected to one side of the mounting plate, a cargo baffle is fixedly connected to one end of the buffer, a fork foot is fixedly connected to one side of the mounting plate, the surfaces of the mounting plate, the cargo baffle and the fork foot are all wrapped with carbon fiber panels, and the thickness of each carbon fiber panel is larger than 6 mm. A mounting leg is fixedly connected to the side, away from the goods blocking plate, of the mounting plate, a connector is rotationally connected to the mounting leg, a wheel groove is formed in the fork foot, the buffer comprises a buffer seat and a connecting seat, the buffer seat is fixedly connected with the mounting plate, the connecting seat is fixedly connected with the goods blocking plate, and the buffer seat is fixedly connected with the connecting seat. A buffering head is slidably connected into the buffering seat and fixedly connected with the connecting seat, and a sliding shaft is rotatably connected into the buffering seat.

Various embodiments include die structures and methods of forming die structures. In an embodiment, a device includes: a lower substrate; upper integrated circuit dies bonded to the lower substrate with dielectric-to-dielectric bonds and with metal-to-metal bonds, the upper integrated circuit dies including a semiconductor material; a buffer layer around the upper integrated circuit dies, the buffer layer including a stress reduction compound, a coefficient of thermal expansion of the stress reduction compound being greater than a coefficient of thermal expansion of the semiconductor material; and an encapsulant around the buffer layer and the upper integrated circuit dies, the encapsulant including a molding compound, a coefficient of thermal expansion of the molding compound being greater than the coefficient of thermal expansion of the stress reduction compound.

Direct-bonded optoelectronic interconnects for high-density integrated photonics are provided. A combined electrical and optical interconnect enables direct-bonding of fully-processed optoelectronic dies or wafers to wafers with optoelectronic driver circuitry. The photonic devices may be III-V semiconductor devices. Direct-bonding to silicon or silicon-on-insulator (SOI) wafers enables the integration of photonics with high-density CMOS and other microelectronics packages. Each bonding surface has an optical window to be coupled by direct-bonding. Coplanar electrical contacts lie to the outside, or may circumscribe the respective optical windows and are also direct-bonded across the interface using metal-to-metal direct-bonding, without interfering with the optical windows. Direct hybrid bonding can accomplish both optical and electrical bonding in one overall operation, to mass-produce mLED video displays. The adhesive-free dielectric-to-dielectric direct bonding and solder-free metal-to-metal direct bonding creates high-density electrical interconnects on the same bonding interface as the bonded optical interconnect. Known-good-dies may be used, which is not possible conventionally, and photolithography over their top surfaces can scale to high density.

This invention relates to a stacked packaging structure, comprising: a substrate having a substrate window on its right side; a first chip mounted on the left side of the substrate, wherein the right side of the back side of the first chip has a back metal; a first molding compound layer; a first molding compound via electrically connected to the substrate window and the back metal of the second chip; a second chip offsetly mounted on the first chip, wherein the right side of the back side of the second chip has a back metal; a second molding compound layer; a second molding compound via electrically connected to the substrate window and the back metal of a third chip; a third chip offsetly mounted on the second chip, wherein the right side of the back side of the third chip has a back metal; a metal pillar disposed on the right side pin of the front side of the third chip; a third molding compound layer; a third molding compound via; a circuit electrically connecting the metal pillar and the third molding compound via; and conductive leads electrically interconnecting the substrate, the first chip, the second chip, and the third chip.

The present application relates to a kind of taste sensor based on electrical signal, preparation method and its detection method.Taste sensor device structure is constituted by one metal / metal oxide functional electrode and three Ag / AgCl electrodes deposited on substrate, wherein metal layer and Ag electrode are deposited on substrate by evaporation deposition, and metal oxide functional layer and AgCl layer are formed on it by electrochemical method, and taste simulation and identification function are realized by measuring the potential between metal / metal oxide functional electrode and Ag / AgCl electrode and the conductance and alternating current impedance between the other two Ag / AgCl electrodes.The taste sensor of the present application has the characteristics of simple preparation process, fast measurement response and wide application, etc.

The invention provides an individualized tibia defect repairing type knee joint prosthesis, and belongs to the technical field of orthopedic implants. The device is formed by assembling a femoral condyle, a femoral bone marrow needle, a plateau pad, a tibia plateau, a restoration body and a tibia bone marrow needle. Wherein the tibia platform and the restoration body are matched through metal-metal threads and are assisted by bone cement to achieve anti-rotation locking, the restoration body adopts a 3D printing individualized bone trabecula structure and is compounded with an HA coating to promote bone ingrowth, the tibia bone marrow needle and the platform are connected through a standard taper connector, inventory and individualization compatibility is achieved, and the bone marrow needle and the platform are connected through a standard taper connector. The defects that an existing prosthesis is large in bone mass loss, unattractive in reconstruction, free of bone ingrowth function, high in processing cost and the like are overcome, and the postoperative function of a tibia defect patient and the long-term stability of the prosthesis can be remarkably improved.

The invention also provides a briquette comprising:(i) a particulate material; and(ii) a binder, the binder comprising (a) at least partially saponified polyvinyl alcohol and (b) an alkali metal alkyl siliconate or polyalkylsilicic acid; wherein the particulate material is selected from a carbonaceous material, metal, metal ore, mineral waste or a mixture thereof.

The invention provides a two-dimensional composite catalyst as well as a preparation method and application thereof, and relates to the technical field of photocatalysis. The preparation method comprises the following steps: mixing a first organic metal complex (organic palladium complex), a second organic metal complex (organic molybdenum, organic tungsten or organic iridium complex), a ligand, a reducing agent and a first solvent, and carrying out ligand exchange and metal-metal coupling reduction reaction; and mixing the obtained PdX-ene (X is Mo, W or Ir) powder with a graphite phase carbon nitride nanosheet and a second solvent, and carrying out a self-assembly reaction to obtain the two-dimensional composite catalyst. The two-dimensional composite catalyst has a unique two-dimensional structure, a relatively large mass transfer specific surface area, relatively high photo-induced electron and hole space separation efficiency and photo-induced carrier transmission efficiency, so that the two-dimensional composite catalyst has excellent performance of photocatalytic decomposition of water to produce hydrogen. The two-dimensional composite catalyst is used for hydrogen production through water photolysis, the hydrogen production performance is obviously improved compared with that of a precious metal Pt-loaded g-C3N4 photocatalyst, and the cost is low.

Electrochemical reaction fuel cell system, comprising:a cathode (8), an anode (1),one at least of the anode and of the cathode comprising at least one metal, one metal hydroxide or one metal oxide in the molten state,a solid electrolyte (7), placed between the cathode and the anode,at least one regenerator (4) for regenerating, starting from one at least of the oxidation-reduction reaction products which is recovered at at least one of the anode and of the cathode, by a reaction, at least one of the products constituting at least one of the anode or of the cathode or the fuel or oxidizer consumed at at least one of the anode or of the cathode,one of the regeneration products being reintroduced into the system as electrode made of liquid metal or liquid metal oxide or in the form of fuel or oxidizer, one of the reactions making possible said regeneration or making possible the regeneration of one of the reactants of the oxidation-reduction reaction being endothermic.

The invention discloses a wafer room temperature bonding method and application thereof, and belongs to the technical field of semiconductor advanced packaging and three-dimensional integration. The method comprises the following steps: providing a first wafer, and sequentially preparing a metal plane layer and an oxide layer on the surface of one side of the first wafer to form a metal / oxide composite layer; selectively etching the metal / oxide composite layer to remove the oxide layer and form a metal nanowire array layer on the metal plane layer; providing a second wafer, and preparing a metal material layer on the surface of one side of the second wafer; and aligning the surface, with the metal nanowire array layer, of the first wafer with the surface, with the metal material layer, of the second wafer, and then bonding. According to the invention, the metal nanowire array is introduced into the bonding interface, so that the nanowires are subjected to plastic deformation and local surface diffusion under the action of external pressure, that is, compact and reliable metal-metal bonding can be realized in a room temperature environment, and the requirements of a low-temperature process window and high strength are both considered.

A rapid and facile design strategy to create a highly complex optical tag with programmable, multimodal photoluminescent properties is described. This is achieved via intrinsic and biomolecule-fluorophore hidden signatures. As a first covert feature of the tag, an intricate novel heterometallic near-infrared (NIR) emitting mesoporous metal-organic framework (MOF) was synthesized comprising homometallic hexanuclear clusters based on Nd and Yb. To generate controlled, multimodal, and tailorable emission with difficult to counterfeit features, the NIR emissive MOF was post-synthetically modified via a fluorescent biomolecule labeling design strategy. The surface attachment of several distinct fluorophores, including the simultaneous attachment of up to three distinct fluorescently labeled DNA oligos was demonstrated, with excitation and emission properties across the visible spectrum (480-800 nm). The DNA inclusion as a secondary covert element in the tag was demonstrated via detection of SYBR Gold dye association.

A sodium-ion solid-state electrolyte and a preparation method therefor, and an all-solid-state sodium-ion battery. The electrolyte comprises a substrate and an interface protection layer, wherein the interface protection layer covers a surface of the substrate; the substrate is a polymer electrolyte; the interface protection layer is a metal; and the metal comprises at least one of Sn, Zn, In, Sb, Bi and Ge. By covering the surface of the substrate with the metal source serving as the interface protection layer, a stable metal thin layer interface is formed by means of the alloying of sodium and the metal source, which metal thin layer interface can effectively prevent the growth of sodium dendrites, reduce damage to the sodium-ion solid-state electrolyte in the cycling process of a battery, improve the interfacial wettability and reduce the interfacial charge transfer resistance, thereby improving the interface stability of a sodium metal negative electrode and the solid-state electrolyte, and therefore a stable long-cycle all-solid-state sodium-ion battery is obtained.

The application discloses a kind of final forging forming die of blade and design method, including the following steps, according to the blade part design drawing provided blade profile section coordinate parameter, calculate the blade profile section coordinate parameter after adding allowance;According to the blade profile section coordinate parameter after adding allowance and balance angle, the coordinate parameter of the blade profile section of final forging forming die is calculated;The coordinate parameter of the blade profile section of final forging forming die calculated is imported into three-dimensional modeling design software, the shape of the blade body part of final forging is generated;Blade tenon and process chuck are added to the blade body both ends obtained by final forging;With the blade profile center line of the blade profile section of final forging as parting line, the parting surface of final forging forming die is constructed, and final forging forming die is designed according to parting surface.No flash groove is needed for final forging forming die to accommodate excess metal, metal material is gradually deformed "on demand" distribution, and final forging does not need to be trimmed, which will not cause raw material waste and will not cause blade deformation.