769results about "Perfluorocarbons/hydrofluorocarbons capture" patented technology

A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

The present invention relates to a vacuum evacuation system used to evacuate a processing gas from one or more process chambers for use in, for example, a semiconductor-device manufacturing apparatus. The vacuum evacuation system is a vacuum apparatus for evacuating a gas from a plurality of process chambers (1). The vacuum evacuation system includes a plurality of first vacuum pumps (5) coupled to the plurality of process chambers (1) respectively, a collecting pipe (7) coupled to the plurality of first vacuum pumps (5), and a second vacuum pump (8) coupled to the collecting pipe (7).

Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

An effluent gas stream treatment system for treatment of gaseous effluents such as waste gases from semiconductor manufacturing operations. The effluent gas stream treatment system comprises an oxidation unit to which an oxygen-containing gas such as ozone may be added, with input of energy (e.g., thermal, radio frequency, electrical, microwave, etc.), to effect oxidation of oxidizable species in the effluent, such as halocompounds (e.g., chlorofluorocarbons, perfluorocarbons), CO, NF3, nitrogen oxides, and sulfur oxides). The effluent gas stream treatment system may include a wet scrubber associated with the oxygen-containing gas source, so that the gas stream is contacted with the oxygen-containing gas during the wet scrubbing operation, to enhance removal of oxidizable species in the gas stream during treatment.

A method and device for the chemical conversion, filtration and/or purification of fluids water or other solutions containing microbiological and chemical contaminants, such as fluids containing arsenic, chlorine, bacteria, viruses, and cysts, where the fluid is passed through a purification material composed of fluid treatment carbon, metal phosphates, metal oxides, reduced metals, metal silicates, metal sulfates, metal carbonates, metal hydroxides, or combinations thereof. The material may be included in a fixed binder matrix.

The invention relates to a manganese-based composite oxide catalyst for catalytically decomposing ozone, and a preparation method of the catalyst. The catalyst comprises manganese oxide and at least one transition metal oxide. The preparation method is a homogeneous precipitation method or a hydrothermal synthesis method. The manganese-based composite oxide catalyst adopts innocuous and non-poisonous materials, prepares a manganese-based composite oxide catalyst with high catalytic activity, good wet resistance and high catalytic deposition content by the simple and easy method, so that the catalyst is suitable for catalytically decomposing ozone produced in water or air treatment and modern industry and home appliance.

A system for abating undesired component(s) from a gas stream containing same, such as halocompounds, acid gases, silanes, ammonia, etc., by scrubbing of the effluent gas stream with an aqueous scrubbing medium. Halocompounds, such as fluorine, fluorides, perfluorocarbons, and chlorofluorocarbons, may be scrubbed in the presence of a reducing agent, e.g., sodium thiosulfate, ammonium hydroxide, or potassium iodide. In one embodiment, the scrubbing system includes a first acid gas scrubbing unit operated in cocurrent gas/liquid flow, and a second "polishing" unit operated in countercurrent gas/liquid flow, to achieve high removal efficiency with low consumption of water. The scrubbing system may utilize removable insert beds of packing material, packaged in a foraminous containment structure. The abatement system of the invention has particular utility in the treatment of semiconductor manufacturing process effluents.

A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.

A method is described for recovering a noble gas, such as xenon or krypton, from a first gas mixture comprising a plurality of components, one of which is the noble gas and the others are typically helium and/or nitrogen, argon, and relatively light fluorocarbons. The gas mixture is first conveyed to a gas chromatography column for separating the noble gas from the other components of the gas mixture. As the noble gas travels relatively slowly through the column, the other components are exhaust from the column before the relatively slow noble gas. Following the exhaust of these other components, a purge gas is supplied to the column to flush the noble gas therefrom. A second gas mixture comprising the noble gas and the purge gas is conveyed from the column to a membrane separator to separate the second gas mixture into a noble gas-rich gas stream and a purge gas-rich gas stream, which may be recirculated back to the column for re-use.

An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.

The present invention is a system and method for treating a flue gas stream to remove strong acid compounds selected from the group consisting of hydrofluoric acid (HF), hydrochloric acid (HCl), sulfuric acid (H₂SO₄), and sulfur trioxide (SO₃) by injecting a sodium sorbent selected from the group consisting of sodium sesquicarbonate, sodium carbonate-bicarbonate, trona ore, mechanically refined trona ore, and trona into the flue gas stream, calcining substantially all of the sodium sorbent in the presence of the flue gas stream to form a soda ash, reducing the concentration of the at least one strong acid compound in the flue gas stream by reacting the at least one strong acid compound with the soda ash to form a sodium based by-product; and changing the chemistry of the flue gas stream to reduce the overall average resistivity of the particulate matter.

Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.

Compositions and methods based on the use of fluoroalkene containing from 3 to 4 carbon atoms and at least one carbon-carbon double bond, such as 1,2,-dichloro-3,3,3-trifluoropropene (HFO-1223xd) having properties highly beneficial in solvent cleaning applications.

The invention discloses a preparation method of a visible-light activated cuprous oxide/titanium dioxide nano-composite photocatalyst and applications thereof, belonging to the technical field of environmental pollution control. The preparation of the catalyst comprises the following steps of: 1) carrying out electrochemical oxidation reaction under the action of hydrofluoric acid with the concentration of 0.2 percent by weight for preparing a titanium dioxide nanotube electrode, wherein the tube diameter of a nanotube is about 80nm, and the tube length is 550nm; and 2) adopting a photoreduction chemical method to prepare the cuprous oxide/titanium dioxide nano-composite photocatalyst. The prepared composite photocatalyst has the advantages of simple synthesis, stable performance, the synthesis process belonging to the field of green chemistry and the like. The composition of cuprous oxide can not only reduce the defect of high composite probability of photoproduced electron-hole pairs, but also expand the light response range of the titanium dioxide nanotube electrode and further improve the photocatalytic degradation efficiency thereof to organic pollutants in the visible light range, thereby having very high practical value and application prospect.

A method comprising: providing a halogen stream; providing an alkane stream; providing a decoking agent; and reacting at least a portion of the halogen stream with at least a portion of the alkane stream in the presence of a halogenation catalyst and the decoking agent to form a halogenated stream.

An effluent gas stream treatment system for treatment of gaseous effluents such as waste gases from semiconductor manufacturing operations. The effluent gas stream treatment system comprises a pre-oxidation treatment unit, which may for example comprise a scrubber, an oxidation unit such an electrothermal oxidizer, and a post-oxidation treatment unit, such as a wet or dry scrubber. The effluent gas stream treatment system of the invention may utilize an integrated oxidizer, quench and wet scrubber assembly, for abatement of hazardous or otherwise undesired components from the effluent gas stream. Gas or liquid shrouding of gas streams in the treatment system may be provided by high efficiency inlet structures.

Disclosed is a scrubber for processing semiconductor waste gas produced in a semiconductor fabricating process, wherein the scrubber burns the waste gas with a flame of a high temperature, filters and captures particles produced after the waste gas is burnt, and discharges particle-filtered waste gas to the atmosphere. The semiconductor waste gas processing scrubber includes: a supply section for supplying semiconductor waste gas, fuel and oxygen; a burner connected to the supply section so as to burn the semiconductor waste gas by flame; a burning chamber joined to the burner so as to cause particles, which are produced as the semiconductor waste gas is burnt, to drop; a wet tower installed at a side of the burning chamber so as to cause the particles, which are transferred from the burning chamber after adsorbing the particles using water, to drop; and a water reservoir tank connected to the burning chamber and the wet tower so as to capture the particles which have dropped from the burning chamber and the wet tower.

A method comprising: providing an alkyl halide stream; contacting at least some of the alkyl halides with a coupling catalyst to form a product stream comprising higher hydrocarbons and hydrogen halide; contacting the product stream with a solid reactant to remove at least a portion of the hydrogen halide from the product stream; and reacting the solid reactant with a source of oxygen to generate a corresponding halogen.

In a first aspect, a first abatement apparatus is provided. The first abatement apparatus includes (1) an oxidation unit adapted to receive an effluent stream from a semiconductor device manufacturing chamber; (2) a first water scrubber unit adapted to receive the effluent stream from the oxidation unit; and (3) a catalysis unit adapted to receive the effluent stream from the first water scrubber unit. Numerous other aspects are provided.

A method for cleaning a process chamber of a plasma treatment device includes introducing gas that has been activated with a remote plasma source into a process chamber, reactivating the activated gas in the process chamber, reacting the reactivated gas with a deposit inside the process chamber and exhausting the reacted gas.

The invention provides a preparation method of a metal organic framework material. The metal organic framework material is synthesized by virtue of a hydrothermal method or a heating reflux method and is a metal organic framework MOF(Fe) material. The invention also discloses a cigarette filter tip added with the metal organic framework MOF(Fe) material. According to the preparation method and application of the metal organic framework material, by adding the metal organic framework MOF(Fe) material into the cigarette filter tip, the contents of harmful ingredients such as ammonia and benzo[a]pyrene in cigarette mainstream smoke can be effectively decreased; the environmental friendliness is achieved and the safety to a human body after the material is added into the cigarette is ensured. Meanwhile, the metal organic framework MOF(Fe) material has super-strong adsorption capacity to organic dye pollutants and is worthy of popularization and application.