Method for extracting subthreshold swing of MOSFET of double-material double-gate structure

A technology with sub-threshold swing and double-gate structure, which is applied in special data processing applications, instruments, electrical digital data processing, etc., to achieve fast and accurate analysis

Inactive Publication Date: 2014-10-01
FUDAN UNIV
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Problems solved by technology

The traditional bulk silicon MOSFET subthreshold swing model is no longer suitable, which brings new challenges to the modeling and simulation of new multi-gate nanodevices

Method used

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  • Method for extracting subthreshold swing of MOSFET of double-material double-gate structure
  • Method for extracting subthreshold swing of MOSFET of double-material double-gate structure
  • Method for extracting subthreshold swing of MOSFET of double-material double-gate structure

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Embodiment Construction

[0058] Calculated by our analytical model, as image 3 As shown in the present invention, the analysis results of the subthreshold swing of the dual-material dual-gate MOSFET under different bulk silicon thicknesses vary with the channel length. Figure 4 It is the analytical result of the subthreshold swing of dual-material dual-gate MOSFET with different gate oxide thicknesses as a function of channel length. Like ordinary dual-gate MOSFETs, the subthreshold swing of dual-material dual-gate MOSFETs also decreases with decreasing channel length. At the same time, the increase of the gate oxide layer and the increase of the thickness of the channel will make the sub-threshold characteristics of the channel worse, and the sub-threshold swing will increase.

[0059] According to our analytical model, the subthreshold swing of dual-material dual-gate MOSFET can be extracted very conveniently and accurately.

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Abstract

The invention belongs to the technical field of semiconductors, and particularly discloses a method for extracting the subthreshold swing of an MOSFET of a double-material double-gate structure. Potential distribution of the MOSFET of the double-material double-gate structure is acquired, and then an analysis model of the subthershold swing is acquired through acquired potentials according to the definition of the subthreshold swing. The analysis model of the subthreshold swing is simple in form and clear in physical concept, and a rapid tool is provided for circuit stimulation software on research on a novel device of the double-material double-gate structure.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for extracting a subthreshold swing of a metal-oxide-semiconductor field-effect transistor (MOSFET) with a double-material double-gate structure. Background technique [0002] With the continuous improvement of integrated circuit chip integration and the continuous reduction of device geometry, MOSFET devices have gradually developed from a planar structure to a non-planar three-dimensional structure. Among all kinds of non-traditional planar device structures, the dual-gate structure MOSFET has strong gate control ability, which can better suppress the short-channel effect and reduce the static power consumption of the device. Combining dual-material gate MOSFET with dual-gate MOSFET can combine the advantages of both, making the device have better short-channel characteristics and performance. Since the gate is made of a material with a smaller work...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G06F17/50
Inventor 胡光喜向平刘冉郑立荣
Owner FUDAN UNIV
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